本實驗以混和式碳來源（石墨靶、甲烷）之射頻磁控濺鍍法來製備類鑽碳薄膜，並且希望藉由調控濺鍍功率、工作氣氛、氣體流量等製程參數來改變薄膜中的sp3、sp2鍵結比例。有鑑於前人研究之分類、成長機構等皆混亂且較無標準，本研究希望能以方便且精準的方式來進行類鑽碳薄膜的特性分析。
　　製程參數選用純甲烷，工作壓力5 mtorr，氣體流量5 sccm，室溫下變動濺鍍功率：60、80、90、100、110、130、150 W；並將此七組不同製程參數之類鑽碳薄膜鍍製於非導電矽基板、導電矽基板及玻璃基板上，並分別進行薄膜表面形貌觀察、硬度測試、薄膜應力量測、鍵結狀態分析（拉曼光譜、X光光電子能譜）、能隙量測、微觀導電性分析及片電阻量測。拉曼光譜中主要分析G-band（～1580 cm-1）與D1-band（1350 cm-1）之偏移、ID/IG；XPS則是將C1s擬合出C－C（～285 eV）、C＝C（～284 eV）、C－O（～286 eV），並以C－C代表sp3、C＝C代表sp2。
　　經由拉曼光譜及X光光電子能譜之鍵結組態分析的結果顯示，濺鍍功率60～150 W之樣品中sp3的比例隨濺鍍率提升而升高，並且ID/IG、G-band位置對sp3含量之趨勢與前人研究相符，故本研究成功地結合拉曼光譜及X光光電子能譜之量測，初步建立類鑽碳的行為模式及特性分析。雖然硬度、能隙及導電能力則是受到多種因子影響，如膜厚、雜質、結構缺陷等共同控制，但還是由sp3/sp2之比例主宰。

Diamond-like carbon (DLC) thin films on p-Si (100) substrate, soda-lime glass substrate were deposited by RF magnetron sputtering at different parameters. By changing deposition temperature (25, 100, 200, 300°C) and RF power (60, 80, 90, 100, 110, 130, 150 W) to control properties of films. DLC is a member of carbon system, and Raman spectroscopy is a standard characterization technique for any carbon materials, here we use Raman spectroscopy to classify our films at first, and to discover which parameter has better efficacy. Raman spectroscopy analysis revealed two bands at ～1350 and ～1580 cm-1 called D-band and G-band, we focus on position-shifting and integrating of intensity ratio (ID/IG) of these band that can use to identify sp3/sp2 configuration in the films. ID/IG is a popular and significant index related to sp3/sp2. ID/IG decreases with the decreasing of sputtering energy, which means the higher energy caused more graphitization. Except Raman spectrum, the bonding structure could be investigated through XPS, using fitting software (XPSPEAK 4.1) to separate sp3, sp2, C－O, et cetera in C1s. But there is various way to explain these data and has no any standard for consulting. This study wants to sort out a clear, simple, and reproducible method that can avoid researchers confusing about the meaning of Raman and XPS studies. Furthermore, we also use AFM, UV-Vis, FE-SEM, et cetera instruments to figure out the properties of DLC films within changing the sputtering parameters.

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