本研究利用溶液凝膠法製備鈦酸鎂鈣複合材料薄膜做為電阻式記憶體之絕緣層，藉由調整複合比例，阻值比可以調控在10到105之間，而其調變機制是由於不同複合比例會改變金屬與絕緣層之間的蕭特基能障進而改變其高阻態電流，
此外，本研究進一步利用穿透式電子顯微分析其電阻轉換機制，由結果發現在低電阻態下，鈦酸鎂鈣絕緣層出現氧化銦結晶並連接上、下電極，由此結果配合電性分析推測，其電阻轉換機制可能起因於電場導致銦離子遷移。

Composite magnesium calcium titanate thin films via sol-gel method as insulator of resistive random access memory were prepared. By adjusting the mixing ratio, the ON/OFF ratio could be tuned in the range of 10 to 105. The Schottky barrier height between metal and insulator was modified with different mixing ratios, and the high resistance state current was altered.
Understanding switching mechanisms is critical for resistive random access memory (RRAM) applications. This work reports an investigation of Al/Mg0.5Ca0.5TiO3 (MCTO)/ITO RRAM, which exhibits bipolar resistive switching behavior. The filaments that connect Al electrodes with indium tin oxide electrodes across the MCTO layer at a low-resistance state are identified. The filaments composed of In2O3 crystals are observed through energy-dispersive X-ray spectroscopy, high-resolution transmission electron microscopy, nanobeam diffraction, and comparisons of JCPD cards. Finally, a switching mechanism resulting from an electrical field induced by indium ion migration is proposed. Indium ion migration forms/ruptures the conductive filaments and sets/resets the RRAM device.

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