本研究方向為開發一微型感知器，而感知器即為感測器，以奈米碳管及金屬矽化物可以製成薄膜感測層而承受高電流密度而不會損壞，同時具有壓阻和熱阻特性，是理想的溫度、壓力感測器材料。因此本研究以目前新興的奈米材料-奈米碳管及具備高熔點之矽化鈦，各別作為感測器的主要材料。
薄膜感測器除了本身具有奈米級的極微小感測層厚度，並且具有高比表面積的特性，在這兩個有別於傳統感測器的優勢下，可大幅度地提高對於溫度、壓力變化偵測的靈敏度。除此之外，本研究同時導入微機電技術，利用黃光微影製程將奈米碳管感測器的圖案微小化，此一步驟可有效地提高其本身對於感測的解析度。
本研究各別應用於感測溫度、量測氣壓的環境，如溫度感測器將應用於高溫環境，奈米碳管溫度感測器在650℃以下、矽化鈦溫度感測器在300℃以下感測能力較好。壓力感測器則將氣體輸入封裝的元件之內迫壓感測層進行量測，應用於外加壓力4大氣壓之間。是故壓力感測器藉由氣壓產生阻值變化，所以感測器和元件需密閉封裝。而奈米碳管感測器由於增加黃光製程定義其路徑線路，在製程中將其上方鍍上一層高溫保護層包覆著奈米碳管，使其溫度可承受至650℃而不會導致損壞。
除此之外，為了解所製備的感測器之效益，進一步進行解析度、靈敏度及反應時間等分析，也對壓力感測器進行溫度校正。本研究以微機電製程及微奈米技術針對奈米碳管及矽化鈦作為感測器的主要材料，適用於微機電製程及具備極高之熱穩定性，極其適合應用於溫度、壓力量測。

In this research, I want to develop a micro sensor. Consider about the operation principle of sensor, when I minify the size of the sensor, the response time would be much shorter and the sensitivity would be better. In addition, the sensor would operate under high temperature environment such as above 110℃ (for temperature sensor) or test under 4 times atmospheric pressure (for pressure sensor). In this way, the temperature sensor should work successfully at high temperature and the pressure sensor should design in close environment. The materials of temperature sensor working by direct contact such as platinum or thermocouple are damaged when operating on high temperature and high current density. And then those materials are not easy to minify the size of sensor to nanoscale.
Carbon nanotubes (CNTs) and titanium silicide are well material to fabricated excellent sensitivity sensor, because CNTs have nanoscale size and high surface-area ratio would enhance the sensitivity for temperature or pressure. Titanium Silicide have high melting point. And then both have well mechanical properties such as high thermal stability, CNTs could withstand about 650℃ in vacuum and deposition oxide layer without burning. Titanium Silicide could measure under 400℃. CNTs and Titanium Silicide could work on high temperature and high current density without damage. In addition, I could improve the temperature and pressure sensor resolution by pattern the sensor miniaturization using MEMS technology and photolithography process.
Therefore, I believe CNTs and Titanium Silicide would be well material of the temperature and pressure sensor in this research. Furthermore, we analysis resolution, sensitivity, response time and correction of pressure sensor. Then I fabricated CNTs & Titanium Silicide sensor successfully by MEMS technology.

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