本論文利用共電鍍方式取代傳統物理氣相沉積法(濺鍍)，來製備Cu-In-Ga先驅物於不鏽鋼基板上，經由硒化的方式形成Cu(InGa)Se2 (CIGS)薄膜。最後以硫化CIGS薄膜表面層以頓化或修復CIGS表面之缺陷，可藉由硫化摻入少許的硫於CIGS薄膜並達到提升元件開路電壓(Voc)的目的。

本論文研究先驅物的成分、硒化溫度與時間、硫化方式與硫化溫度等的實驗參數對薄膜及元件特性的影響，以XRD、SEM、EDS及拉曼光譜分析，對薄膜進行晶體結構、表面形態、組成成分進行分析。

最後製作出Cu(InGa)SeS (CIGSS)薄膜太陽能電池，由電壓-電流特性曲線，目前最佳之元件有顯著之二極體特性，其量測數據如下:Voc(開路電壓)=179mV、Jsc(短路電流)=30.97 mA/cm2、F.F.(填充因子)=26%、η(電池效率)=1.46%。

In this thesis I used co-electroplating method, instead of traditional physical vapor deposition, to deposition Copper–Indium-Gallium precursors on the flexible stainless steel substrate , followed by a selenization process to form Cu(InGa)Se2 (CIGS) absorber layer and used surface sulfurization the skin layer of the CIGS film to passivate and/or repair the surface defects. The sulfurization process can replace some Se with S which can increase the open-circurt voltage of the solar cell.

In this study, the influences of the compositions of the precursors, selenazation temperature and duration, method of sulfurization, and the degree of sulfurization on the CIGS film and on the device characteristics were investigated. A SEM was used to observe the film’s morphology, crystalline phase and orientation were determined by XRD and Raman analysis, and an EDS was used to analyze the compositions of the absorber layer.

Finally, Cu(InGa)SeS (CIGSS) thin film solar cells were fabricated and tested.The best device has remarkable diode characteristics.The key parameters are: Voc(open-circuit voltage)=179 mV、Jsc(short-circuit current)=30.97 mA/cm2、F.F.(fill factor)=26%、η=1.46%.

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