ZnO 是一種寬能隙(3.37eV)半導體，且其在常溫下與ZnSe (22meV)和GaN (25meV)相較下具有較大的激子束縛能(60meV)，這些優勢使得ZnO 在光電元件上將有較高的效率表現。因此，ZnO 在近年來被廣泛應用在發光二極體、雷射二極體、紫外光檢測器以及太陽能電池等。
由於ZnO 在未摻雜的情況下將會形成n-type材料，對於p-n接面ZnO 要獲得高摻雜p-type上較為困難。因此我們以金屬-絕緣層-半導體結構取代常見的p-n接面型式的二極體。
近年來，離子佈植與雙氧水濃液被利用來製備MIS 結構二極體中的絕緣層。在製作成本與實驗過程難易的考量下，雙氧水濃液與離子佈植相較下以雙氧水濃液來製備絕緣層是一個較好的選擇。所以我們利用雙氧水來使我們的ZnO 薄膜表面呈現絕緣性。將試片置於31%雙氧水溶液中，使其表面與雙氧水反應呈絕緣性，再以蒸鍍的方式鍍上電極，使其成為金屬－絕緣層－半導體結構，而未反應的ZnO 薄膜鍍上鈦鋁電極形成歐姆接觸，以HP4156量測元件特性。

Besides having a wide direct bandgap of 3.37 eV, ZnO has an exciton binding energy of about 60 meV which is much higher than that of 22 meV and 25 meV for ZnSe and GaN, respectively. These benefits confirm the opto-electronic devices fabricated by ZnO material should have highly efficient performance at room temperature. Therefore the ZnO-based devices such as lighting-emitting diodes (LEDs), laser diodes (LDs), UV photodetectors, and solar cells have been recently proposed. In considering the ZnO-based LEDs, the fabrications of homo-structures still face much challenge.
Owing to the non-stoichiometric property of making an undoped ZnO to be a n-type material, it is very difficult to obtain a highly doped p-type ZnO for the p-n junction. So we use MIS structure instead of p-n junction structure.
Recently, nitrogen ion (N+) implantation and hydrogen peroxide (H2O2) solution were utilized to fabricate the ZnO-based MIS structures, On evaluating the production cost and simplifying the fabrication processes, the treatment by H2O2 solution is a better choice than the ion-implantation in obtaining an insulating ZnO layer. We immerse our sample in hydrogen peroxide to be an insulator layer. After that, Pt Schottky contact was deposited on peroxide-treated ZnO samples by thermal evaporation. Ti/Al contacts were used as an ohmic contact. We can get its I-V curve by HP4156.

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