在本研究中，我們首先探討濺鍍的製程參數濺鍍距離、工作壓力與基板負偏壓對銅與鈷薄膜微結構的影響。進一步利用性質較佳之低電阻的銅與鈷薄膜應用於平面電感的導線，探討導線電阻對平面電感的電感值與品質因子的影
響，並探討不同的介電層材料對平面電感品質因子的影響。
　　實驗結果顯示銅薄膜於濺鍍距離近、低工作壓力與高基板偏壓之鍍膜條件下，濺鍍銅粒子具有高能量入射於基板表面後，銅薄膜會藉由應變能的釋放發生再結晶與晶粒成長。銅薄膜的結構會由以低表面能(111)優選方位轉變為具有低應變能(200)優選方位。而(200)優選方位再結晶的發生會使得銅薄膜晶粒成長、具有低的缺陷密度與低的電阻率。其次，在濺鍍工作壓力3mTorr、濺鍍距離7cm 條件下可沈積出具有低溫穩定ε 相的鈷薄膜。而鈷薄膜的結晶方位會經由基板負偏壓的增加由(002)轉變為(100)，並具有較佳的電阻值。
　　當利用具有較低電阻的銅薄膜於螺旋平面電感導線時，可經由減少集膚效應與接近效應產生的渦電流，而降低電感的串聯電阻值減少能量損失，使得電感具有較高的品質因子與電感值。而利用具有低介電常數的材料作為平面電感
的介電層時，可經由減少因高頻操作時造成的介電層的極化損失，使得電感的品質因子有明顯的改善。然而，雖然鈷薄膜具有非常高的導磁率，但其電阻值也非常的高。因此當利用鈷薄膜應用於平面電感的導線時，只會在很小的頻率範圍展現電感的性質，且具有非常低的品質因子。

Abstract
　　In this study, we first discuss the evolution of Cu and Co thin film microstructure as function of sputter parameters, including substrate-to-target (DT-Sub) distance, working pressure and negative substrate bias. Subsequently, the Cu and Co thin films with best quality and low resistivity are applied as the spiral conductor in spiral thin film inductor.The inductance and quality factor of inductor properties are discussed in terms of Cu and Co resistivity. Furthermore, we discuss the effect on inductor quality factor from different dielectric materials, including organosilicate glass, florinated silicon glass, silicon dioxide and polyimide.
　　Experimental results reveal that recrystallization and grain growth proceed with high energetic Cu adatom bombardment on substrates through strain energy relaxation by reducing DT-Sub, low working pressure and high negative substrate bias. The crystal structure of the Cu thin film will change from (111) preferred orientation with low surface energy to (200) preferred orientation with low strain energy. The preferred (200) orientation via recrystallization results in large grains, low defect density and low resistivity. On the other hand, Co thin film with low-temperature stable ε phase can be obtained by sputtering at working pressure of 3 mTorr and DT-Sub of 7cm. The crystal orientation of the Co thin film will change from (002) to (100) with increasing negative substrate bias and hence better resistivity.
　　The use of the lower resistive Cu thin film as the metal line in the spiral thin film inductors can reduce series resistance, which induces small eddy current from skin- effect and proximity-effect, and hence increases quality factor significantly and slightly improves inductance for thin film inductors. Furthermore, quality factor of thin film inductor can be largely enhanced by using low-dielectric-constant dielectrics due to the reduction of dielectric polarization losses. Although, the inductor consisting of Co thin film with large permeability but high resistivity, which revelers the inductor only applicable for very small frequency range with poor quality factor.

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