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研究生: 林昶春
Lin, Chang-Chun
論文名稱: 對排聚苯乙烯摻合體結晶行為之研究
Crystallization of syndiotactic polystyrene blends
指導教授: 王紀
Wang, Chi
學位類別: 碩士
Master
系所名稱: 工學院 - 化學工程學系
Department of Chemical Engineering
論文出版年: 2004
畢業學年度: 92
語文別: 中文
論文頁數: 150
中文關鍵詞: 同排聚苯乙烯對排聚苯乙烯小角度光散射
外文關鍵詞: iPS, sPS, SALS
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  •   本論文主要分為三個部分,第一個部分是小角度光散射法(SALS)觀察sPS/aPS混摻在經歷冷結晶過程中Hv pattern的變化,以判斷其內部的晶體微結構。第二個部分是以POM量測晶體成長速率。第三個部分是以電荷耦合感光元件(CCD)搭配偏光顯微鏡(POM),量測sPS 及sPS/iPS 混摻晶體成長及熔化時光強度的改變。以SALS量測sPS/aPS系統實驗中,可觀察到明顯的四片葉子圖案,其最大散射所對應的qmax(散射向量)出現,可判斷表現出來的Hv pattern 接近球晶,同時根據qmax可以求得球晶半徑進而可得成長速率,另一方面發現隨時間的增加以及結晶溫度的升高,散射圖形皆有漸小的趨勢。摻合樣品經醋酸戊酯蝕刻後,以掃描式電子顯微鏡(SEM)觀察aPS的分佈,發現摻入小分子aPS會造成較嚴重的微觀相分離。本實驗將結晶性的對位聚苯乙烯(sPS)摻入會結晶的同排聚苯乙烯(iPS),探討sPS分別摻入兩種不同含量比例的iPS後,以POM觀察其結晶當sPS/iPS混摻在兩階段及一階段結晶過程中,使用CCD+POM以偵測sPS及iPS結晶與熔化時光強度的變化及熔點,以WAXD判斷sPS/iPS混摻的晶型,同時使用SEM和TEM觀察sPS/iPS混摻微結構。

      This research is separated into three parts. In the first part, the internal crystal microstructures of neat sPS and sPS/aPS blends were carried out by
    observing the changes of Hv patterns obtained from small-angle lightscattering (SALS) after cold-crystallization process. In the second part,polarized optical microscope(POM) has been used to study the effect of sPS/iPS blends on the crystal growth rate. In the final part, charged coupled device (CCD) and a polarized optical microscope (POM) were used to measure the change of light intensities during the crystal growth or melting.Apparent cloverleaf patterns can be observed by small-angle light scattering (SALS) in neat sPS and sPS/aPS blends system. The appearance of scattering intensity maximum with scattering vector qmax, suggest that that the Hv patterns obtained are from the spherulites and can be use to determine the
    spherulitic growth of sPS/aPS blends. On the other hand, the longer time or higher crystallization temperature, the smaller scattering patterns. After using amyl acetate to etch blends, we observe aPS location under SEM observation.aPS(L) was blended with sPS may cause serious segregation.Crystalline syndiotactic polystyrene(sPS) was blended with cystalline isotactic polystyrene(iPS) in this research. We will discuss crystal behavior and morphology of sPS/iPS blends with POM. When sPS/iPS blends under one-step crystallization and one-step crystallization, CCD+POM is used to detect the transmitted intensity variation
    and measure the melting point. WAXD has been used to determine the crystal form of the sPS/iPS blends.We use SEM and TEM to observe the microstructure of sPS/iPS blends.

    中文摘要…………………………………………………………………i 英文摘要……………………………………………………………………ii 誌謝………………………………………………………………………iii 目錄………………………………………………………………………iv 表目錄……………………………………………………………………vi 圖目錄…………………………………………………………………vii 一、前言…………………………………………………………………1 二、簡介…………………………………………………………………2 三、文獻回顧……………………………………………………………3 3.1 SALS……...………………………………………………………3 3.2 同排聚苯乙烯………………………………………………………4 3.3 對排聚苯乙烯………………………………………………………6 3.4 相分離………………………………………………………………7 四、理論…………………………………………………………………8 4.1 SALS 理論與公式……………………………………………………8 4.2 Keith-Padden 結晶理論……………………………………………11 4.3 Tg 理論………………………………………………………………12 4.4 結晶度………………………………………………………………14 4.5 WAXD…………...……………………………………………………14 4.6 Avrami 方程式………………………………………………………15 4.7 平衡熔點(Tmo) ……………………………………………………17 五、實驗…………………………………………………………………19 5.1 實驗原料……………………………………………………………19 5.2 實驗藥品……………………………………………………………19 5.3 實驗儀器……………………………………………………………20 5.4 實驗步驟……………………………………………………………22 5.4.1 樣品製備…………………………………………………………22 5.4.2 SALS 操作步驟…………………………………………………24 5.4.3 POM………………………………………………………………28 5.4.4 CCD+POM 操作步驟………………………………………………29 5.4.5 WAXD………………………………………………………………31 5.4.6 SEM………………………………………………………………33 5.4.7 TEM………………………………………………………………34 六、結果與討論…………………………………………………………48 6.1 sPS/aPS 混摻冷結晶過程微結構變化之觀察……………………48 6.2 以POM 量測晶體成長速率…………………………………………85 6.2.1純iPS晶體成長速率………………………………………………85 6.2.2 sPS/iPS混摻晶體成長速率………………………………………85 6.3 以CCD+POM 觀察晶體結晶與熔化行為……………………………94 6.3.1 純sPS 與純iPS 結晶分析………………………………………94 6.3.2 sPS/iPS=70/30 混摻兩階段結晶分析…………………………99 6.3.3 sPS/iPS=50/50 混摻兩階段結晶分析…………………………117 6.3.4 sPS/iPS 混摻一階段結晶分析…………………………………138 七、結論…………………………………………………………………144 八、參考文獻……………………………………………………………146 九、自述…………………………………………………………………150

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