數十年來，各種不同類型的氫氣感測器被廣泛的研究與開發。而自從以蕭特基接觸為基礎的氫氣感測機制被提出之後，隨著半導體製程的進步，體積小、靈敏度高，可大量生產的半導體式氫氣感測器逐漸成為研究主流。
在本論文中有鑒於鈀金屬對於氫氣的優越觸媒特性以及高電子移動率場效電晶體極佳放大器功能和穩定成熟的半導體製程技術，因此，我們首先研製了一個具有高銦含量之砷化銦鎵通道層的砷化銦鋁/砷化銦鎵/砷化鎵變晶性高電子移動率場效電晶體式氫氣感測器並且以鈀金屬作為觸媒金屬，其具有高電子的移動速率、電流密度等傳輸特性，另外為了探討氧化層對於感測特性所造成的影響，我們研製了一個具有氧化層的砷化銦鋁/砷化銦鎵/砷化鎵變晶性高電子移動率場效電晶體式氫氣感測器並且以相同的鈀金屬作為觸媒金屬，繼而在不同溫度與濃度條件下來作一連串穩態和暫態響應的電性分析與熱力學及動力學探討。由實驗結果得知，具有氧化層之感測元件能夠大幅提升對氫氣的感測效能，最後期許在未來多功能氣體感測器的整合型晶片能夠實現化。

Many hydrogen sensors have been investigated and studied comprehensively in several decades. Since the hydrogen-sensing mechanism based on the Schottky barrier height variation has been proposed, the related semiconductor-type hydrogen sensors have attracted great attention due to the advantages of high hydrogen detection sensitivity, low cost and matured techniques. In this thesis, due to the good catalytic activity of palladium and the advantages of high electron mobility transistor (HEMT), hydrogen sensors based on InAlAs/InGaAs/GaAs metamorphic high electron mobility transistors (MHEMTs) are fabricated and demonstrated with depositing the same catalytic palladium metal. In addition, in order to study the influence of a thin oxide layer on hydrogen detection ability, Therefore, we also fabricated a Pd-oxide-InAlAs metamorphic high electron mobility transistor (MHEMT) is also fabricated for comparison. In accordance with these two devices, we exhibit a series of analyses of steady-state and transient response behaviors under hydrogen-containing atmospheres at different operating temperatures. From the experimental results, the thin oxide layer can suppress the Fermi-level pinning effect and prevent interdiffusion at the Pd/InAlAs interface. So hydrogen detection ability can be improved.

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