本論文主要針對氮化鎵摻雜錳光電特性應用於中間能帶太陽能電池元件之特性探討。首先，我們利用穿透、霍爾量測以及PL 對氮化鎵摻雜錳進行光電特性的分析。而由穿透率量測結果得知，氮化鎵摻雜錳會於禁止能帶內形成中間能帶，因此材料不僅能吸收能量大於氮化鎵能隙的光子，亦會吸收能量大於中間能帶與價(導)電帶間能量差值的光子，便將此特性應用於太陽能電池主動層，以期能貢獻出額外光電流。
於太陽能電池部分，我們設計了兩種結構，其分別為窗口層為p-AlGaN 以及窗口層為p-GaN 之氮化鎵摻雜錳中間能帶太陽能電池，並比較分析窗口層的不同和主動層氮化鎵摻雜不同錳流量對於中間能帶太陽能電池之影響，預期能藉由中間能帶與價(導)電帶間的吸收而貢獻出額外的光電流，進而提升轉換效率。實驗結果與分析將於本論文中詳加描述。

In this study we focused on the optical and electrical characteristics of Mn-doped GaN for application in the intermediate band solar cells (IBSCs). In the beginning we investigated Mn-doped GaN by transmittance spectrums, hall measurement and PL. According to the transmittance spectrums, the Mn-doped GaN exhibited that the Mn-related intermediate band was formed in the forbidden band of GaN. Therefore, apart from absorbing the photons with energy more than the band gap energy of GaN, the photons with energy that was higher than the difference between the intermediate band and the conduction (valence) band could also be absorbed. So we used the Mn-doped GaN as the active layer of solar cells, expecting that the intermediate band of Mn-doped GaN could contribute more photocurrent.
In our work, we fabricated two kinds of Mn-doped GaN intermediate band solar cells. The difference was the window layer. One was p-AlGaN and the other was p-GaN. Then we discussed the influence of the different window layers applied to intermediate band solar cell and expected the intermediate band could enhance the photocurrent. The more details would be discussed in this dissertation .

第一章
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