隨著元件製程技術的需求提升，電子元件持續朝向微小化邁進，這使的奈米線或奈米晶粒的製程技術顯的彌足重要，也有驅策許多單位積極的思考，如何使奈米材料與現有的矽晶圓作異質結合。其中，碳化矽因具有良好的高溫穩定性，已經廣泛的被用來製作高能電子元件或高溫元件。常見的碳化矽的相有兩種：体心立方的β-SiC及六方晶系的α-SiC，其中β-SiC具有2.2eV的間接能隙，具有發綠光的特性，可作特殊的光電用途。
　　在本實驗裡，我們採用化學氣相沉積法成長碳化矽奈米線，使用二茂鐵作催化劑，矽晶圓作基材(有經過研磨、經過蝕刻、原始三種)，反應溫度900°C- 1100°C，總流量50sccm。反應後的產物經過分析，我們發現有兩種產物被發現，一種是奈米碳管，另一種是實心的碳化矽奈米線，結構呈現同芯雙層。經過TEM及拉曼散射的分析後確定其芯層為体心立方晶格的β-SiC，殼層則為非晶質的物質。
　　關於碳化矽奈米線的產生機制，主要是來自二茂鐵與矽基材。反應物矽源即是來自於矽基材。微觀上，這是由於基材表面研磨造成表面不規則的奈米級結構，使「尺寸效應」變的顯著，導致矽與碳低溫反應的可能性提高；在巨觀上，從碳化矽奈米線的產量與基材表面粗糙程度的關聯可得到映證。

　　The size of electronic devices are demanded to be small, and the processing technique of nanowires and nanoparticles become more important. how to produce hetero-junctions between silicon wafer and nanomaterials, of which SiC has been adopted widely as high-energy electronic devices or high-temperature devices for its large good stability in high temperature. There are two common forms of SiC: hexagonal α-SiC, and cubic-centered β-SiC which can be utilized to specialized electro-optical devices for its indirect bandgap with bandgap energy of 2.2eV to generate green light.

　　In this thesis, chemical vapor deposition is adopted for the epitaxy growth of SiC nanowire, with ferrocene as the catalyst and silicon wafer as the substrate (scratched, etched, or as received). The reactive temperature is 900°C- 1100°C and the flow rate is 50sccm After analysis, the products after reaction are found to be carbon nanotube(CNT) and solid SiC nanowire with nanoscale coaxial cable. TEM and Raman scattering revealed the core consists of body-centered cubic β-SiC and the shell is formed with amorphous material.

　　SiC nanowire is synthesized with ferrocene and silicon wafer. Microscopically, the scratching process leads to the nano-sized irregular surface of the substrate, therefore the size effect becomes significant, and the probability for the reaction of silicon and carbon at low temperature is increased. Macroscopically, the relationship between the overall production and roughness can be verified.

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