本論文利用共電鍍技術取代傳統的物理氣相沉積法(濺鍍)來製備銅銦鎵金屬先驅層於鍍有鉬薄膜之可撓式不鏽鋼基板上，再使用高溫硒化法形成銅銦鎵二硒吸收層。製備銅銦鎵二硒太陽能電池主要方法有: 濺鍍法、共蒸鍍法、電鍍法等等。電鍍法具有低成本、製程簡單、製造大面積材料的優點與發展潛力，對於業界之量產及發展上皆有相當大的助益。
在實驗中電鍍之電位、硒化時間、硫化鎘薄膜等等的實驗參數皆會影響最終銅銦鎵二硒太陽能電池之品質。本實驗透過X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、能量分散光譜儀(EDS)，對製備的薄膜進行晶體結構、表面形貌、組成成分進行分析。
本實驗最後成功作出CIGS薄膜太陽能電池，由電流-電壓特性曲線，此元件具有顯著之二極體特性，目前最佳元件之數據分別為Voc = 49.97 mV、Jsc = 13.93 mA/cm2、F.F. = 26.44 %、η = 0.17 %。

In this dissertation, I used co-electro-deposition (ED) technique to deposit Copper, Indium, and Gallium as metal precursors on a Mo coated flexible stainless steel substrate, followed by selenization to fabricate CIGS solar cells. There are many techniques such as sputtering, co-evaporation, and ED, to prepare Cu(In,Ga)Se2 thin film. Among these methods, ED process draws lots attentions and is an attractive way to prepare the absorber film because of its potential for low cost and large scale production. The study varied several parameters to fabricate CIGS solar cells, such as the co-plating voltage, selenization temperature and time, and conformity of the CdS thin film etc. I used SEM to observe films’ morphology, X-ray diffraction to analyze film’s crystallinity and crystal orientation, X-ray energy dispersive spectroscopy to analyze film’s compositions. The fabricated flexible CIGS solar cells were measured with solar simulator under 1.5G. Currently, the open-circuit voltage, the short-circuit current density, the fill factor, and the efficiency of the best cell are 44.97 mV, 13.93 mA/cm2, 25% and 0.17%, respectively.

【1】 黃惠良，曾百亨，太陽電池，P.3，2008。
【2】 劉炘，太陽能簡介，2006。
【3】 戴寶通，鄭晃忠，太陽能電池技術手冊，P.13，2008。
【4】 楊翔如，王孟傑，”2010年全球太陽光電系統安裝量回顧與2011年市場展望”，IEK產業情報網，新能源，2011。
【5】 陳宏仁, ”有機太陽能電池之發展現況”工業材料雜誌192期。
【6】 顧鴻濤，太陽能電池元件導論，P.14，2009。
【7】 戴寶通，鄭晃忠，太陽能電池技術手冊，P.10，2008。
【8】 李雯雯，王孟傑，薄膜太陽能電池技術發展潛力分析，P.3-1，2007。
【9】 P. Jackson, D. Hariskos, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%”, Prog. Photovolt: Res. Appl, 2011, in press.
【10】 顧鴻濤，太陽能電池元件導論，P.29，2009。
【11】 S. O. Kasap原著，黃俊達等譯，光電半導體元件，P.291， 2006。
【12】 林明獻，太陽能電池技術入門， 2007。
【13】 楊德仁，太陽能電池材料，P.5，2008。
【14】 陳頤承、郭昭顯、陳俊亨，太陽電池量測技術，工業材料雜誌 258期，2006。
【15】 A. Luque and S. Hegedus,”Handbook of photovoltaic science and engineering”, John Wiley & Sons, New York, 2003.
【16】 顧鴻濤，太陽能電池元件導論，P.232，2009。
【17】 顧鴻濤，太陽能電池元件導論，P.235，2009。
【18】 M.Ganchev, J.Kois, M.Kaelin, S.Bereznev, E.Tzvetkova, “Preparation of Cu(In,Ga)Se2 layers by selenization of electrodeposited Cu–In–Ga precursors”, Thin Solid Films, 511, P.325, 2006.
【19】 O. Volobujevaa, M. Altosaara, J. Raudojaa, E. Mellikova, M. Grossberga, L. Kaupmeesa, P. Barvinschib, “SEM analysis and selenization of Cu–In alloy films produced by co-sputtering of metals”, Solar Energy Materials & Solar Cells, 93, P.11, 2009.
【20】 R.N. Bhattacharya and K. Ramanathan, “Cu(In,Ga)Se2 thin film solar cells with buffer layer alternative to CdS”,Solar Energy, 77, P.679, 2004.
【21】 I. Repins1, M.A. Contreras, B. Egaas, C. DeHart, J. Scharf, C.L. Perkins, B. To and R. Noufi,”19.9% efficient ZnO/CdS/CuInGaSe2 Solar Cell with 81.2% Fill Factor”, PROGRESS IN PHOTOVOLTAICS, 16, P.235, 2008.
【22】 P. Jackson, D. Hariskos, “New world record efficiency for Cu(In,Ga)Se2 thin-film solar cells beyond 20%”, Prog. Photovolt: Res. Appl., 2011, in press.
【23】 T. Nakada, M. Mizutani, Y. Hagiwara and A. Kunioka,”High efficiency Cu(In,Ga)Se2 thin film solar cells with a CBD-ZnS buffer layer”, Solar Energy Materials & Solar Cells, 67, P.235, 2001.
【24】 T. Nakada and M. Mizutani, “18% Efficiency Cd-Free Cu(In,Ga)Se2 Thin-Film Solar Cells Fabricated Using Chemical Bath Deposition (CBD)-ZnS Buffer Layers”, Jpn. J. Appl. Phys., 41, P.L165, 2002.
【25】 T.Wada, N.Kohara, S.Nishiwaki and T.Negami, “Characterizationof the Cu(In,Ga)Se2/ Mo interface in CIGS solar cells”, Thin Solid Films, 387, P.118, 2001.
【26】 T. Markvart and L. Castañer, “Solar Cells: Materials, Manufacture and Operation”, Elsevier Science LTD, 2005.
【27】 R. Noufi, R. Axton, C. Herrington and S.K. Deb, “Electronic properties versus composition of thin films of CuInSe2”, Applied Physics Letters, 45, P.668, 1984.
【28】 Michael Bass, “Handbook of Optics, Third Edition Volume II: Design, Fabrication and Testing, Sources and Detectors, Radiometry and Photometry”, vol.2, 2nd ed., McGraw Hill Professional, New York,(1994).
【29】 S. Ishizuka, K. Sakurai, A. Yamada, K. Matsubara, P. Fons, K. Iwata, S. Nakamura, Y. Kimura, T. Baba, H. Nakanishi, T. Kojima and S. Niki, ”Fabrication of wide-gap Cu(In1-xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness”, Solar Energy Materials & Solar Cells, 87, P.541, 2005.
【30】 S. Kijima and T. Nakada, “High-Temperature Degradation Mechanism of Cu(In,Ga)Se2-Based Thin Film Solar Cells”, Applied Physics Express, 1, 075002, 2008.
【31】 何生龍，彩色電鍍技術，化學工業出版社，2008。
【32】 F.S Hasoon, Y. Yan, H . Althani, K.M Jones, H.R Moutinho, Alleman J, M.M. Al-Jassim, R. Noufi, ”Microstructural properties of Cu(In,Ga)Se2 thin films used in high-efficiency devices”, Thin Solid Films, 387, P.1, 2001.
【33】 陳力俊，材料電子顯微鏡學，儀科中心出版，P.352，1994。
【34】 Y.D. Chung, D.H. Cho, N.M. Park, K.S. Lee, J. Kim, “Effect of annealing on CdS/Cu(In,Ga)Se2 thin-film solar cells”, Current Applied Physics, 11, P.S65, 2010.
【35】 許樹恩，吳泰伯，X光繞射原理與材料結構分析，中國材料學會，P.169，1996。
【36】 D.S. ALBIN, J.R. TUTTLE, and R. NOUFI, “The Formation of Large-Grain CulnSe2 Films by Selenization by High-Rate Se Transport under Moderate Vacuum Conditions”, Journal of Electronic Materials, 24, No.4, 1995.
【37】 N. Kohara, T. Negami, M. Nishitani, T. Wada, “Preparation of Device-Quality Cu(In, Ga)Se2 Thin Films Deposited by Co-evaporation with Composition Monitor”, Japan Journal of Applied Physics, 34, P.L1141, 1995.
【38】 J.F. Fang, D.C. Perng, J.W. Chen, ”Mechanism of forming (220/204)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process”, Journal of Crystal Growth, 312, P.106, 2011.
【39】 H. Matsushitaa, A. Katsuia, T. Takizawa, ”Cu-based multinary compounds and their crystal growth : synthesis processes, phase diagrams and control of vapor pressures”, Journal of Crystal Growth , 237, P.1986, 2002.
【40】 C. Guillèn, J. Herrero, “Effects of Thermal and Chemical Treatments on the Composition and Structure of Electrodeposited CulnSe2 Thin Films”, J. Electrochem. Soc., 141, No.1, 1994.
【41】 K. Ramanathan, M.A. Contreras, C.L. Perkins, S. Asher, F.S. Hasoon, J. Keane, Da. Young, M. Romero, W. Metzger, R. Noufi, J. Ward and A. Duda, ”Properties of 19.2% Efficiency ZnO/CdS/CuInGaSe2 Thin-film Solar Cells”, PROGRESS IN PHOTOVOLTAICS, 11, P.225, 2003.