本研究為具抗反射層與干涉結構之摻釔氧化釩熱阻式微感測器特性研究，對使用氧化釩作為感測材料之微型熱感測元件進行優化與改良，首先將釔元素微量摻雜於氧化釩感測薄膜中，藉此改變薄膜的電特性以及提升對溫度的靈敏度，並探討釔元素的摻雜量對電性產生之影響，尋求感測薄膜之最佳製程條件。另外將奈米金屬網狀結構之抗反射層製作於金屬吸收層上方，利用光線因折射率改變於結構中不斷折射與反射的特性達到抗反射之目的，提升元件對於紅外線的吸收率，藉此提升元件響應度。元件設計成空腔懸浮結構，包含鋁反射鏡、空腔、支撐懸臂、電極、感測層、鉻金屬吸收層與抗反射層，入射紅外光與經過反射鏡反射之紅外光形成建設性干涉，大幅提升紅外線的吸收率，且懸浮結構亦可有效減少感測層與基板接觸所產生之熱散逸，以增進元件特性。
本研究使用磁控式射頻濺鍍系統製備摻釔氧化釩感測薄膜，於氬氣與氧氣之環境下轟擊釩靶與三氧化二釔靶進行共濺鍍，調變三氧化二釔靶的濺鍍時間，將摻雜釔元素之原子含量控制於3.08 %時，感測薄膜具有2.85 %/oC之溫度電阻係數，其室溫電阻率為9.92 Ω-cm，符合熱影像系統之讀出積體電路(Read-out integrated circuit, ROIC)製程之所需的電阻率須於1~10 Ω-cm之條件，此為本研究感測層薄膜之最佳製程條件，並將此結果應用於元件製程上。此外，本研究透過自組裝技術成功製作出單層排列結構之聚苯乙烯奈米球模板，作為蒸鍍遮罩，以此製備出奈米金屬網抗反射層，進而降低元件對紅外線的反射率。
本研究製作出氧化釩熱感元件、摻釔氧化釩熱感元件以及具奈米金屬網抗反射層之摻釔氧化釩熱感元件，且此三種元件皆具有建設性干涉結構，三種元件的響應度分別為584.64 kV/W、886.43 kV/W與931.89 kV/W，元件對紅外光的吸收率分別為70.28%，70.38%，以及74.41%，證實將摻雜釔元素與新增抗反射層可有效提升元件的響應度以及降低紅外線反射率，提升元件的感測特性。

In the study, the vanadium oxide (VOx) microbolometers were optimized and their performances were improved. The element yttrium (Y) was doped into VOx films and it made the higher temperature coefficient of resistance (TCR) and sensitivity to temperature. Additionally, the influence of the doping amount of the element Y on the electrical property was investigated. The nanomesh anti-reflection layer was produced on the top of microbolometer, and it could make the infrared light to refract and reflect in the nanostructures to enhance the absorptance. The microbolometer was designed as a cavity suspension structure with a reflector and a thin-metal absorption layer to create constructive interference. The devices were measured at a current of 1 μA, and the responsivity, thermal time constant, thermal conductivity, absorptance and detectivity were 931.89 kV/W, 4.48 ms, 6.19×10-8 W/K, 74.41% and 1.54×108 cmHz0.5W-1, respectively. The results showed that the doping Y in the VOx film and the nanomesh anti-reflection layer could effectively improve the sensitivity of the VOx microbolometers.

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