本研究為探討在15~50℃，10~40分鐘不同氧化劑如AgNO3、Fe(NO3)3以及H2O2之HF水溶液對銀顆粒催化蝕刻矽奈米線形成速率及微結構之影響。矽奈米線的長度隨著蝕刻時間增加以及蝕刻溫度的增高而增長。ㄧ般來說，矽奈米線陣列在HF、HF/Fe(NO3)3以及HF/AgNO3水溶液中較為平整，但是在HF/H2O2水溶液中則會產生參差不齊的現象。蝕刻時間在20分鐘以內時矽奈米線在不同溶液中之形成速率由小到大依次為HF、HF/Fe(NO3)3、HF/AgNO3、HF/H2O2，但是時間在30分鐘以上時，矽奈米線在HF/AgNO3溶液之形成速率變為最快。由TEM觀察，在矽奈米線表面發現許多奈米銀顆粒大小約為5~30nm。在蝕刻矽基板的過程中，這些奈米銀顆粒會同時催化蝕刻生長出來之矽奈米線。因此在HF/H2O2溶液中蝕刻反應速率最快造成矽奈米線表面的粗糙及斷裂，使得當時間超過30分鐘矽奈米線之形成速率會下降。在本研究當中，在HF/AgNO3溶液中生成矽奈米線其表面平順且有較高之形成速率。

Effects of various oxidizing agents such as AgNO3, Fe(NO3)3, and H2O2 on the formation rate and microstructure of Si nanowires (SiNWs) by etching the Si substrates in aqueous HF solutions with the Ag catalyst at 15-50˚C for 10-40 min were studied. The length of SiNWs increased with the etching time and etching temperature. In general, the SiNW arrays fabricated in HF, HF/Fe(NO3)3, and HF/AgNO3 solutions, respectively, were smooth, while those fabricated in the HF/H2O2 solution were rough. For the etching time less than 20 min, the formation rate of SiNWs increased with the etching solutions in the sequence of HF, HF/Fe(NO3)3, HF/AgNO3, and HF/H2O2, whereas for the etching time longer than 30 min, that of SiNWs in the HF/AgNO3 solution became fastest. From TEM observation, many small Ag nanoparticles, 5-30 nm in size, were present on the surface of SiNWs. During etching of Si substrates, these Ag nanoparticles can simultaneously catalyze the electroless etching of SiNWs. Therefore, the fastest etching of Si in the HF/H2O2 solution rendered the SiNWs to be severely rough and readily broken, resulting in the decline of the formation rate of SiNWs at a time longer than 30 min. In the present study, the SiNWs fabricated in the HF/AgNO3 solution showed a smooth surface and a higher formation rate.

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