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研究生: 陳冠宇
Chen, Guan-Yu
論文名稱: 電子束帶寬對激發表面電漿子效應研究模擬
Simulation Studies of Electron Beams Bandwidths Effects on Surface Plasmon Excitations
指導教授: 藍永強
Lan, Yung-Chiang
學位類別: 碩士
Master
系所名稱: 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年: 2015
畢業學年度: 103
語文別: 中文
論文頁數: 84
中文關鍵詞: 表面電漿子電子束PIC-FDTD。
外文關鍵詞: surface plasmon excitation, electron beam, PIC method
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  • 電子束激發表面電漿子能夠輕易的調整所激發的表面電漿子頻率與強度,遠比光激發表面電漿子方便,有較多的應用性,因此需要對電子束激發表面電漿子的情形做討論。
    本論文探討利用PIC-FDTD的數值模擬方式來模擬利用電子束來激發IMI結構的表面電漿子並且分析激發的表面電漿子是否與理論相符合,同時,也改變電子束的操作頻率與電子束能量來觀察表面電漿子的激發效果。並由模擬結果發現電子束激發表面電漿子有一段操作範圍。另外,本論文也利用模擬的方式來得到SRR週期性結構的色散曲線圖。

    In this paper, we used the finite-difference-time-domain (FDTD) method to investigate the excitation of surface plasmon polaritons (SPPs) by electron beam The dielectric function of metal is described by Drude model. The simulation method for the interaction between electromagnetic fields and electrons is particle-in-cell finite-difference-time-domain (PIC-FDTD). The excitations of surface plasmon polaritons by parallel electron beam. We propose the simulation result for excitation SPPs of insulator-metal-insulator (IMI) structure by electron beam. The result of numerical calculation agree well with the analytical theory. We also show that there is an operating region for parallel excited SPPs. When the operating point is not the intersection of SPPs dispersion curves and electron beam dispersion curves, we still can excite SPPs. The intensity of parallel excited SPPs will decrease when the operating point far from intersection.

    口試合格證明 I 中文摘要 II 英文摘要 III 致謝 IX 目錄 X 表目錄 XII 圖目錄 XIII 第一章 簡介 1 1-1 表面電漿簡介 1 1-2 分裂共振環(Split-ring resonator)簡介 2 1-3 研究動機 6 第二章 表面電漿特性 8 2-1 表面電漿(Surface plasmon)介紹 8 2-2 Drude Model 9 2-3 介電質與金屬接面(IM)的表面電漿模態 10 2-4 介電質-金屬-介電質(IMI)的表面電漿模態 15 2-5 金屬-介電質-金屬(MIM)的表面電漿模態 19 2-6 表面電漿子激發方式簡介 24 第三章 模擬方式-有限時域差分法(FDTD) 29 3-1 馬克斯威爾方程式 29 3-2 Yee網格與電磁場時間推進公式 33 3-3 FDTD的數值穩定 41 3-4 VORPAL簡介 44 第四章 電子束激發表面電漿子模擬 47 4-1 IMI結構的尺寸與設定 48 4-2 IMI結構模擬結果與討論 50 4-3 週期性SRR結構的尺寸與設定 72 4-4 週期性SRR結構模擬結果與討論 73 第五章 結論 80 參考文獻 82

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