本研究使用分層電化學方式沉積CuInSe2於Mo/玻璃基板上，透過調變電鍍參數控制CuInSe2之品質，將沉積完成之電鍍樣品透過RTA熱處理後提升CuInSe2之結晶性，並針對此流程製程之CuInSe2設計光感測器結構，量測光感測器之特性。
本研究首先透過循環伏安法量測Cu、In、Se三元素之還原電位，並且移除硒化法，改善CuInSe2沉積狀況。接著改變原始配方之電鍍週期，原始配方之週期為沉積Cu、Se、In、Se，此循環重複兩次，更改之電鍍週期為沉積Cu、In、Se，此循環僅重複一次，改變電鍍週期後成功製程接近理想CuInSe2元素比例之樣品。最終透過調變Cu之沉積時間，精確的調變CuInSe2之Cu/In比例，成功製程p-type CuInSe2與n-type CuInSe2。
研究推測具備蕭特基整流特性之CuInSe2相較於歐姆特性之CuInSe2更適合作為光感測器之吸收層，因此將所製程之p-type CuInSe2應用於MSM(metal-semiconductor-metal)結構之光感測器與p-n接面光感測器，MSM結構光感測器所量測之響應度(responsivity) R = 0.65 A/W，探測率(detectivity) D = 4.663 × 109 Jones，p-n接面光感測器之響應度R = 0.89 A/W，探測率D = 1.014 × 1010 Jones。

In this study, CuInSe2 was fabricated by layered electrodeposition on Mo/glass substrates. The quality of CuInSe2 was controlled by adjusting the electroplating parameters. The deposited electroplating samples were subjected to RTA to improve the crystallinity of CuInSe2, and the photodetector structure was designed for CuInSe2 in this process to measure the characteristics of the photodetector.
The research process is to measure the reduction potential of Cu, In, and Se by cyclic voltammetry, and remove the selenization method to improve the deposition of CuInSe2. Then change the electrodepositing cycle of the original formula. The cycle of the original formula is to deposit Cu, Se, In, Se, this cycle is repeated twice. The changed electrodepositing cycle is to deposit Cu, In, Se, this cycle is repeated only once. This process successfully processes samples with close to the ideal CuInSe2 element ratio. Finally, the Cu/In ratio of CuInSe2 can be precisely adjusted by adjusting the deposition time of Cu. This modulation successfully processes p-type CuInSe2 and n-type CuInSe2.
The research speculates that CuInSe2 with rectification characteristics is more suitable as the absorption layer of the photodetector than CuInSe2 with ohmic contact. Therefore, p-type CuInSe2 is applied to the photodetector of metal-semiconductor-metal (MSM) and the photodetector of p-n junction. The responsivity of the MSM photodetector is 0.65 A/W, and the detectivity is 4.663 × 109 Jones. The responsivity of the p-n junction photodetector is 0.89 A/W, and the detectivity is 1.014 × 1010 Jones.

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