在本論文中，我們利用光調制光譜來探討氮磷化銦鎵與砷化鎵異質結構之光電特性。樣品為: In0.54Ga0.46P1-yNy/GaAs (y=0, 0.5%, 1.0%, 2.0%)。

　　論文中的第一部份，我們以平行電容板模型作為基礎，直接由FKO之震盪週期求得內建電場F，即可求得樣品之界面電荷密度σi和被電子所佔據的界面態密度Dit。

　　論文中的第二部份是量測不同激發光強度下的譜線，根據熱游子輻射理論和電流傳輸理論，我們可以從PR訊號強度隨著激發光束強度的變化中，求得樣品的界面內建電位Vbi和界面態密度。

　　從兩個不同方法我們所求的結果極為吻合，我們發現到當氮的摻雜量愈高時，其界面電場及界面態密度愈小，而其成因則與晶格匹配的程度有關。

　Photoreflectance (PR) spectra were used to study the interfacial electro-optic properties of InGaPN/GaAs heterostructures fabricated by molecular beam epitaxy. The samples investigated were In0.54Ga0.46P1-yNy/GaAs (y=0, 0.5%, 1.0%, 2.0%).

　In the first part of this thesis, we based on our approach the electric capacityboard model, and evaluated the built-in electric field F by Franz-Keldysh oscillations (FKOs), obtaining the interfacial charge density σi and the interfacial state density Dit.

　In the second part of this thesis, PR spectra were measured under various pump beam intensities. Based on thermonic emission theory and current-transport theory, the interfacial state density as well as built-in potential Vbi were determined from the dependence of the PR intensity versus the pumping beam flux.

　We get an extremely close result from two different methods. The electric field at the interface and the interfacial state density decrease as the concentration of nitrogen increase. This is related to the magnitude of lattice mismatches.

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