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研究生： 林郁喬
Lin, Yu-Chiao
論文名稱： 以熱碳還原CuO粉末法生長SiO2奈米線之研究
The study of the growth of SiO2 nanowires via carbothermal reduction of CuO powders
指導教授： 林文台
Lin, Wen-Tai
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2005
畢業學年度： 93
語文別： 中文
論文頁數： 87
中文關鍵詞： 氧化銅 、二氧化矽 、熱碳還原 、奈米線
外文關鍵詞： carbothermal reduction, CuO, SiO2, nanowire
相關次數： 點閱：69  下載：1 
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    • 本研究在探討生長溫度與時間、Ar流量、Ar/O2氣氛中O2流量以及CuO/C粉末中碳含量等因素對於以熱碳還原CuO粉末方法所長SiO2奈米線的影響。在Ar流量100 sccm、溫度1000℃-1100℃以及無催化劑條件下，加熱CuO/C混合粉末可以在Si基板上長出相當數量的SiO2奈米線。在無CuO/C混合粉末的條件下並未觀察到奈米線。當CuO/C粉末中的碳含量增加，除了SiO2奈米線外，還會長出少量的SiC。由實驗結果可以知道，Ar流量至少要在10 sccm以上才會長SiO2奈米線，而且奈米線的直徑隨著流量的增加而變粗，意謂著藉由Ar輔助帶動氣體傳輸幫助成核與成長的方式是生長奈米線的重要機制。反應過程中所產生的CO2和Si基板反應，使得基板上留下許多的凹洞，而奈米線主要就是從凹洞內生長出來的。在Ar氣氛中添加O2會產生出相當多量的CO，進一步抑制奈米線的生長。從實驗結果來看，經由熱碳還原CuO粉末所長的SiO2奈米線主要是遵從VS生長機制成長。

    The growth of SiO2 nanowires（SiONWs）via carbothermal reduction of CuO powders as functions of the growth temperature, time, Ar flow rate, the carbon concentration in the CuO/carbon powders, and the oxygen concentration in the Ar/O2 flow were studied. Significant amount of SiONWs were grown on the Si substrate without the catalyst from the CuO/carbon powders at a temperature of 1000℃-1100℃ in a flowing Ar with the flow rate of 100 sccm. Without using CuO/carbon powders SiONWs could not be readily grown. A small amount of SiC associated with SiONWs was grown from the CuO/carbon powders with a higher proportion of carbon. The minimum Ar flow rate required for the growth of SiONWs was about 10 sccm and the amount as well as the diameter of SiONWs increased with increment of the Ar flow rate, revealing that the vapor transport assisted by the Ar flow is an important mechanism for the nucleation and growth of SiONWs. The growth of SiONWs mainly originated in the cracks which were formed in the Si substrate due to the generation of SiO(g) from the reaction between CO2 and the Si substrate. The introduction of O2 into the Ar flow could generate siginficant amount of CO and thereby suppress the growth of SiONWs. The present studies reveal that the growth of SiONWs via carbothermal reduction of CuO powders mainly follows the vapor-solid（VS）mechanism.

    本文目錄 中文摘要....................................................I 英文摘要................................................... II 誌謝感言................................................... III 本文目錄...................................................IV 圖目錄.....................................................VI 第一章 奈米材料簡介........................................ 1 1.1 前言.................................................... 1 1.2 奈米效應................................................ 1 1.2.1 奈米表面效應....................................... 1 1.2.2 量子尺寸效應....................................... 3 1.2.3 量子穿隧效應....................................... 4 1.3 一維奈米材料............................................ 4 第二章 基本理論............................................ 8 2.1 文獻回顧................................................ 8 2.1.1 奈米線合成技術...................................... 8 雷射蒸鍍（laser ablation）.............................. 8 化學氣相沉積（chemical vapor deposition）................ 8 熱蒸鍍（thermal evaporation）.......................... 10 熱碳還原（carbothermal reduction）..................... 11 模板輔助（template-assisted） .......................... 12 溶膠-凝膠法（sol-gel）................................ 13 2.1.2 奈米線生長機制.................................... 14 Vapor-Liquid-Solid（VLS） ............................ 14 Oxide-Assisted Growth（OAG） ........................ 15 Vapor-Solid（VS）.................................... 16 Solution-Liquid-Solid.................................. 17 Solid-Liquid-Solid..................................... 18 Solid-Solid transformation（SS）........................ 19 2.2 儀器原理............................................... 20 2.2.1 低掠角X 光繞射儀（GID）.......................... 20 2.2.2 掃瞄式電子顯微鏡（SEM）.......................... 21 2.2.3 穿透式電子顯微鏡（TEM） .......................... 22 2.2.4 X 光能量散佈分析儀（EDS） ....................... 22 2.2.5 化學分析電子光譜儀（ESCA）....................... 23 2.3 研究動機............................................... 25 第三章 實驗方法........................................... 26 3.1 實驗設備及流程......................................... 26 3.2 基板清洗與TEM 試片製備................................ 27 3.2.1 基板清洗........................................... 27 3.2.2 TEM 試片製備...................................... 27 3.3 實驗分析............................................... 27 3.3.1 低掠角X 光繞射分析................................ 27 3.3.2 掃瞄式/穿透式電子顯微鏡分析........................ 28 3.3.3 化學分析電子光譜分析.............................. 28 第四章 結果與討論......................................... 29 4.1 溫度與時間對奈米線生長的影響........................... 29 4.2 Ar 流量對奈米線生長的影響............................... 31 4.3 CuO/C 混合粉末中碳含量對奈米線生長的影響............... 33 4.4 Ar/O2 混合氣體中O2 流量對奈米線生長的影響................ 34 4.5 奈米線生長機制探討..................................... 36 第五章 結論............................................... 40 參考文獻................................................... 41

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