| 研究生: |
楊明勳 Yang, Ming-Hsun |
|---|---|
| 論文名稱: |
鐵磁性Zn1-xCoxO奈米柱之成長與特性分析 Growth and properties of ferromagnetic Zn1-xCoxO nanorods |
| 指導教授: |
吳季珍
Wu, Jih-Jen |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 化學工程學系 Department of Chemical Engineering |
| 論文出版年: | 2004 |
| 畢業學年度: | 92 |
| 語文別: | 中文 |
| 論文頁數: | 112 |
| 中文關鍵詞: | 氧化鋅 、過渡金屬 、自旋電子學 、稀釋型磁性半導體 |
| 外文關鍵詞: | transition metal, ZnO, Diluted magnetic semiconductor(DMS), spintronics |
| 相關次數: | 點閱:101 下載:4 |
| 分享至: |
| 查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本研究利用thermal CVD法於成長氧化鋅的同時摻雜入鈷原子,以形成高方向性的稀釋型磁性半導體Zn1-xCoxO奈米柱。藉由改變裝盛Co有機金屬化合物器皿的大小及其加熱溫度,皆可成功地調節鈷於氧化鋅奈米柱中含量之大小。由XRD及TEM結構分析得知,Zn1-xCoxO (x<11.2%)奈米柱具有單晶的wurtzite結構,且沒有任何鈷或氧化鈷的相分離產生。經由超導量子干涉儀量測Zn1-xCoxO (x<8.7%)奈米柱磁性,顯示其在室溫下具有鐵磁特性,且居禮溫度大於350K。而利用UV-Vis吸收光譜量測成長之Zn1-xCoxO奈米柱,顯示其在可見光區是透明的且其能隙隨鈷含量的增加有紅位移的情形出現。另外本研究也發現經由改善氧化鋅之結晶品質,可有效地提升Zn1-xCoxO奈米柱之鐵磁特性。
Well-aligned Zn1-xCoxO nanorods have been grown by in-situ doping of Co in ZnO nanorods using a thermal chemical vapor deposition method. Co contents in the Zn1-xCoxO nanorods are adjustable by varying the diameter of the Co source container and the vaporing temperature of the Co organo-metallic precursor. Structural analyses indicated that the Zn1-xCoxO (x<11.2%) nanorod possesses the single crystalline wurtzite structure and there is no segregated cluster of impurity phase appearing throughout the nanorod. Room-temperature ferromagnetism in the Zn1-xCoxO (x<8.7%) nanorods is observed and a Curie temperature higher than 350K is obtained in the nanorods. In addition, the ferromagnetic properties of the Zn1-xCoxO nanorods have been shown strongly dependent on the quality of nanorods. The transparence of the Zn1-xCoxO nanorods in the visible region has been examined by uv-visible absorption. Red-shifted of the fundamental absorptions relative to that of the pure ZnO nanorods is observed in the Co-doped ZnO nanorods.
[1] Michael Roukes, 胡崇德譯, 科學人, 15, 93, 2003
[2] George M. Whitesides, 張明德譯, 科學人, 14, 85, 2003
[3] 馬振基, 全華科技圖書, 1-9, 2004
[4] 尤啟中, 以化學氣相沉積法成長SiOx與TiO2一維奈米結構之研究, 碩士論文
[5] A. P. Alivisatos, Science, 271, 933, 1996
[6] Iijima Nature 354, 56, 1991
[7] J. Hu, T. W. Odom, C. M Lieber. Acc. Chem. Res. 32, 435, 1999
[8] Mauricio Terrones, Wen Kuang Hsu, Harold W. Kroto, David R.M. Walton Topics in Current Chemistry, 199, 189, 1999
[9] Y. Cui, C. M. Lieber, Science, 291, 851, 2001
[10] Y. Huang, X. Duan, Y. Cui, C. M. Lieber, Nano Lett., 2, 101, 2002
[11] X. Duan, Y. Huang, C. M. Lieber, Nano Lett,. 2, 487, 2002
[12] Peidong Yang, Science, 292, 1897, 2001
[13] Peidong Yang, J. Phys. Chem. B, 2001
[14] Peidong Yang Business briefing:Global Photonics Applications & Technology, 42
[15] Yi Cui, Qingqiao Wei, Hongkun Park, Charles M. Lieber, Science, 293, 1289, 2001
[16] 溫慧怡,高長寬比氧化鋅奈米柱之生成-氫氣後處理效應研究,碩士論文
[17] David D. Awschalom, 張有毅、陳企寧譯, 科學人, 7, 45, 2002
[18] 盧志權,工業材料雜誌,169,117,2001
[19] H. Ohno, Science, 281, 951, 1998
[20] Kazunori Sato, Hiroshi Katayama Yoshida, Jpn. J. Appl. Phys., 40, L334, 2001
[21] R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89, 1964
[22] K. Hiruma et al., Appl. Phys. Lett. 59, 431, 1991
[23] Younan Xia and Peidong Yang, Adv. Mater. 15, 353, 2003
[24] A. P. Alivisatos et al., Nature 404, 59, 2000
[25] A. P. Alivisatos et al., J. Am. Chem. Soc. 122, 12700, 2000
[26] X. S. Peng et al., Appl. Phys. A 74, 437, 2001
[27] X. S. Peng et al., J. Mater. Chem. 12, 1602, 2002
[28] S. T. Lee et al., J. Mater. Res. 14, 4503, 1999
[29] J.-J. Wu, S.-C. Liu, Adv. Mater. 14, 215, 2002
[30] J.-J. Wu, S.-C. Liu, J. Mater. Chem., 12, 3125, 2002
[31] James D. Plummer Silicon VLSI Technology
[32] B. D. Cullity, introduction to magnetic material, Wesley, 1972
[33] Chikazumi, S., 張喣,李學養合譯,磁性物理學,聯經公司出版,1981
[34] 張文成,唐敏注,張慶瑞,劉如熹,科學月刊,32(4),286,2001
[35] S. Datta, B. Das, Appl. Phys. Lett. 56, 665, 1990
[36] H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, Y. Ohno, Appl. Phys. Lett. 73, 363, 1998
[37] N. A. Gershenfeld, I. L. Chuang, Scienec, 275, 350, 1997
[38] S. J. Pearton et al., J. Appl. Phys., 93(1), 1, 2003
[39] S. J. Pearton et al., Material Science and Engineering, R40, 137, 2003
[40] T. Dietl, H. Ohno, F. Matsukura et al., Science, 287, 1019, 2000
[41] Tomoji Kawai, Kenji Ueda et al., Appl. Phys. Lett., 79(9), 988, 2001
[42] Jae Hyun Kim et al., J. Appl. Phys., 92(10), 6066, 2002
[43] Young Mok Cho et al., Appl. Phys. Lett. 80(18), 3358, 2002
[44] S. G. Yang, A. B. Pakhomov, S. T. Hung, C. Y. Wong, IEEE transactions on magnetics, 38(5), 2877, 2002
[45] Hyeon-Jun Lee et al., Appl. Phys. Lett., 81(21), 4020, 2002
[46] R. M. Frazier, K. Ip et al., J. Vac. Sci. Technol. B, 21(4), 1476, 2003
[47] Y. Q. Chang et al. Appl. Phys. Lett. 83(19), 4020, 2003
[48] Sug Woo Jung et al. Adv. Mater., 15(15), 1358, 2003
[49] 汪建民 材料分析
[50] 鄭信民,林麗娟 工業材料 181 100-108 2002
[51] 呂登復 科儀新知 6(3) 75-86 1984
[52] 楊鴻昌 科儀新知 12(6) 72-79 1991
[53] 行政院國家科學委員會精密儀器發展中心 儀器總覽 基本物理量量測儀
[54] Aicha A. R. Elshabini-Riad, Thin Film Technology Handbook, The McGraw-Hill Companies, Inc.
[55] M.M. Rahman et al., J. Phys. Chem. Solids 60 201 1999