本論文利用五環素與本實驗室自行合成之不同烷基駢苯衍生物做為主動層，製作Pentacene/PTCDI CxH2x+1(X= 2-13)十二種有機互補式金屬氧化半導體(Organic complementary metal-oxide-semiconductor (O-CMOS))並比較碳數與電性之關係，並且探討有無聚亞醯胺(Polyimide,(PI, Nissan RN-1349))為修飾層對有機互補式金屬氧化半導體的電性差別。本實驗所製作的有機互補式金屬氧化半導體在沒有聚亞醯胺當修飾層時，五環素與烷基駢苯衍生物表面能與氧化矽差距過大，而無法形成好的晶格因此電晶體特性較差，但在主動層與絕緣層之間如有聚亞醯胺修飾時可以製作出提升載子漂移率與電流開關比、降低起始電壓的薄膜電晶體，使其n-type與p-type電晶體電特性能相互匹配，並且運用在有機互補式金屬氧化半導體的特性顯著改善，大幅降低消耗功率、增加雜訊邊限能力，並發現烷基駢苯衍生物碳數至七個碳數以前無法得到較好的結晶，因此無法與五環素薄膜電晶體電流匹配，而碳數增加到7以後可從原子力顯微鏡與接觸角等材料分析下可得到較好的晶格大小與表面能的匹配下，因此電流提升到可以跟五環素匹配，而可得較高的邊界雜訊與增益值。由材料分析得知，在有聚亞醯胺為修飾層時，光激發螢光與UV反射光譜皆較無聚亞醯胺往紅位移方向移動，得知半導體薄膜成長於聚亞醯胺上時明顯優於成長於二氧化矽上，在原子力顯微鏡下有修飾層時的烷基駢苯衍生物隨著碳數增加表面顆粒越大，導致表面的邊界減少，許多材料分析皆證明著本實驗的有機互補金屬氧化半導體在有修飾層且碳數大於七後烷基駢苯衍生物與五環素結合時的特性較好。

The Organic complementary metal-oxide-semiconductor was used Pentacene and N,N'-dialkyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-CnH2n+1, n = 2~13) as active layer. The perylene derivatives were synthesized in our laboratory. The Polyimide (PI, Nissan RN-1349) as modification layer spun coat on SiO2.The surface energy of the active layer deposition on PI are smaller than that on SiO2, result in the crystal size of thin film more larger and made better transistor characteristic. The p- and n-type transistors of O-CMOS with PI layer as modification layer could reduce leakage current, have similar current, small power dissipation and high noise margin. And, the better subthreshold swing and larger current result in high gain and great out current of O-CMOS. We analyzed the properties of these thin films with PI by the Photoluminescence and absorption spectrum to prove that the band gap and energy gap smaller than which without PI. Further, we observed the tighter interface between PI to active layer than SiO2 to active layer by Scanning Electron Microscope. Then, all of these analysis are point out the PI layer can promote the OTFTs characteristic. Finally, we demonstrated the outstanding O-CMOS characteristic must to using PTCDI-CnH2n+1 carbon of number 7 to 13 integrate with pentacene.

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