本論文旨在研製應用於3.5 GHz 頻帶無線區域網路(WLAN)並使用雙電源偏壓之PHEMT 微波功率放大器。
在本論文中,我們探討了各項設計微波功率放大器所需的基本理論,
以及電路的相關設計方法。依照系統的需求,我們訂定了功率放大器的設
計目標為: 3.4 ~ 3.6 GHz 的應用頻段、40 dB 的小信號增益、37 dBm 的1
dB 增益壓縮點輸出功率、25 % 的功率效率以及39 dBm 的三階截斷點
輸出功率;其中,選擇的偏壓點是屬於A 類操作的10 Volt – 2000 mA。此外,
本放大器是採用全訊科技公司(Transcom, Inc.)的砷化鎵PHEMT 製程而完成製作。
在輸出功率匹配方面,我們選擇了使用負載線理論方法(Cripps
Method)以及電晶體的小信號模型去完成輸出匹配電路的設計;在偏壓電
路,我們選擇雙偏壓電源結構。在量測方面,使用FR-4 的測試基板來進行
特性的量測。最後,我們比較了量測結果、模擬結果以及設計規格。
本論文所製作的微波功率放大器,確實能使用在3.5 GHz 頻帶的無線區域網路的應用之中。

In this thesis, it is purposed that a 3.5 GHz PHEMT microwave power
amplifier with dual dc supply for the wireless LAN applications.
In this thesis, we discuss about basic theories in microwave circuit
design and circuit design techniques. To meet the requirements of the system,
we specify the power amplifier as follows: frequency range of 3.4 ~ 3.6 GHz,
small signal gain of 40 dB, output power at 1 dB gain compress point of 37
dBm, power efficiency of 25 %, and output IP3 of 39 dBm. In addition, we
select the quiescent point of 10 Volt – 2000 mA in class A operation.
Furthermore, the chip is fabricated in Transcom, Inc. GaAs PHEMT process.
From the aspect of output power matching, we perform the output
matching network using the load line theory (Cripps Nethod) and the
small-signal model of PHEMT. We select dual-bias configuration to
implement dc supply circuit. In addition, we use FR-4 evaluation board to
measure the performance of PA. Finally, we compare the discrepancies
between the measured and simulated results and the specifications.
The microwave power amplifier really presents well matched with the
requirements for 3.5 GHz wireless LAN applications.

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