本研究是利用化學共沉法作為製程，選用氯化鉍(BiCl3) 以及偏釩酸銨(NH4VO3)作為前驅鹽、氫氧化鈉作為沉澱劑於室溫下合成γ相Bi2-xVxO3+x粉末，並藉由改變Bi2-xVxO3+x粉末中釩的添加量，觀察其對導電性質的影響。
首先觀察在不同氫氧化鈉對鉍離子之化學計量比下（[NaOH]/Bi = N），對合成Bi2-xVxO3+x粉末之影響。由XRD與SEM結果顯示，唯有在控制N為80及160的條件下，方能合成出立方體型態之γ相氧化鉍結構。在改變反應時間觀察反應機制的研究方面，由XRD結果顯示對應γ相氧化鉍的繞射峰隨著反應時間增加而往高角度偏移，並於反應12小時後不再偏移，顯示已達固溶平衡所致。在改變釩於Bi2-xVxO3+x中的添加量的研究方面，由XRD與SEM結果顯示，當釩添加量為x＜0.03時，為柱狀型態之α相與立方型態之γ相氧化鉍兩相共存；當釩的添加量增加至x＞0.1後，產物則為單一相γ相氧化鉍結構，顯示釩的添加有助於穩定γ相氧化鉍結構。最後將粉末造粒後壓胚並燒結緻密，觀察不同釩添加量之粉末的導電性質。由熱重/熱差分析結果顯示，在約830 °C有一γ相氧化鉍相轉換成δ相氧化鉍造成之吸熱峰，因此本研究選用800 °C作為燒結溫度。由XRD結果顯示，當釩的添加量為x = 0.1、0.2、0.3與0.4時，其燒結體仍為γ相氧化鉍結構；而在釩的添加量為x = 0.5時，其燒結體出現二次相的生成，主要是由於V含量超過γ相氧化鉍結構之固溶極限所導致。經由阿基米德密度量測發現在燒結24小時後之燒結體其相對密度可達90%以上。最後將摻雜不同釩添加量之Bi2-xVxO3+x燒結體進行直流阻抗分析，發現導電率隨著釩添加量的增加而提升，主要是由於5價釩離子在取代3價鉍離子時，會伴隨著一個間隙氧離子的產生，進而提升導電性質。並在釩添加量為x = 0.4的樣品於800 °C操作溫度下，其導電性可達0.0075 S/cm；然而由於二次相生成，在釩添加量為x = 0.5時的導電性有顯然下降的趨勢。

In the present work,  phased Bi2-xVxO3+x powder has been prepared via chemical precipitation using bismuth chloride (BiCl3) and ammonium metavanadate (NH4VO3) as starting materials while NaOH was applied as the precipitating agent. The precipitation was performed under room temperature.
In the first part of this study, the influence of the NaOH/Bi (N) ratio, on the phase composition of the precipitate was investigated. XRD and SEM results revealed that  phase Bi2-xVxO3+x crystals in cubic morphology could be only obtained at a N ratio above 80.; otherwise, BiOCl3 was coexisted. The second part is to observe their reaction mechanism by changing the reaction time. According to the time-resolved experiment, XRD peaks of the precipitate showed a shift to the higher degree due to the incorporation of V5+ ions into the g-Bi2O3 structure with increasing the reaction time. The peak shift became unchanged after reacting for 12 hours, implying that the introduction of V5+ ions was limited. In the third part of this study, the doping ratio of V5+ (Bi2-xVxO3+x, x = 0.01 – 0.5) was varied. The XRD and SEM characterizations showed that some rod-like crystals corresponding to the α phased Bi2O3 was coexisted when the V5+ doping ratio was less than x = 0.03. With increasing V5+ doping ratio, the amount of g-Bi2O3 in cubic morphology gradually increased and became the unique phase when the V5+ doping ratio was more than x = 0.1. According to the DTA/TG investigation, an endothermic peak was observed at 830 °C which is related to the transformation of g-Bi2O3 to d-Bi2O3. Accordingly, the compacts of the synthesized Bi2-xVxO3+x, (x = 0.1 – 0.5) powders were sintered at 800ºC for 24 h to increase the bulk density higher than 90%. It was shown that the sintering treatment did not change the phase composition for Bi2-xVxO3+x, (x = 0.1 – 0.4); however a second phase related to a new cubic-structure Bi2O3 (JCPDS 74-1373) was appeared for Bi2-xVxO3+x (x = 0.5). It implied that this second phase could be only formed under high temperature.
The ion electric conductivity of Bi2-xVxO3+x (x = 0.1 – 0.5) sintering bodies was measured by DC method. It was observed that the conductivity increased with increasing the amount of V5+ up to x = 0.4. When Bi3+ was replaced by V5+, interstitial oxygen ions were produced in order to reach the structural charge balance that promoted the conductivity. The conductivity was attained 0.0075 S/cm at 800 °C for Bi2-xVxO3+x (x = 0.4) and abruptly decreased for Bi2-xVxO3+x (x = 0.5) mainly due to the formation of second phase.

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