本論文主要為無機硒化鎘/硫化鋅-核/殼量子點於發光二極體及有機記憶體元件之應用。在發光二極體應用方面，主要是利用量子點搭配無機氮化鎵發光二極體，進而達成混光效果。而在有機記憶體應用方面，量子點則擔任抓取載子的角色，從而使得元件內部的本質改變。然後因電性的改變，元件展現出優秀的非揮發性記憶體元件特性。
在發光二極體研究方面，將量子點滴入在被設置於反射碗杯內的藍光氮化鎵發光二極體晶片上面，並且根據標準發光二極體製作技術，將發光二極封裝於透明環氧樹脂裡，其中所使用的量子點含有623奈米的光激發光波長和23奈米的半高寬(FWHM)。首先我們試圖改變量子點的濃度，發現到元件的發光顏色從原本的藍光，色度座標為(0.17,0.07)，轉換至紅光，色度座標為(0.29,0.14)。除此之外，也發現到量子點與綠光有機共軛高分子材料(DBPPV)適度混合調配之後，元件呈現出純白的發光顏色，其光特性具有色度座標為(0.33, 0.34)、演色性為76以及色溫為5600 K。
在記憶體研究方面，我們成功利用聚羥基甲基丙烯酸乙酯(PHEMA)和聚甲基丙烯酸甲酯(PMMA)兩種材料製作出以金屬層/絕緣層/金屬層結構為主的電阻式記憶體元件，其開關特性是由細絲傳導機制所造成。在聚羥基甲基丙烯酸乙酯裡的細絲是由碳離子所組合而成，而在聚甲基丙烯酸甲酯是由金屬離子所構成。兩元件皆展現出超過500次開關周期循環、大於104秒的保存時間以及~104的電流開關比。於電晶體式結構的研究中，我們發現以旋轉塗佈方式沉積而成的PHEMA/PMMA/PHEMA多層高分子薄膜適合使用作為薄膜電晶體裡的介電層並且所製作的元件會因PHEMA內部的氫氧基(-OH groups)展現出磁滯與記憶體特性，這是因為氫氧基會在介電層內部產生載子抓取以及極化效應，元件具備超過2小時的保存時間以及可靠的開關特性。至於量子點於電晶體式記憶體元件的應用研究方面，n+型矽(閘極電極)/氧化矽(介電層)/量子點-聚甲基丙烯酸甲酯混合物(浮動閘)/並五苯(通道層)/金(源極及汲極層)為主要結構，量子點扮演抓取載子的重要角色，則聚甲基丙烯酸甲酯為位障，其元件具有超過五十次無衰退的開關特性，但是因為通道層和混合層之間存在著較低的位障，所以元件展現出較短的保存時間，在106秒之後發現儲存於混合層裡的電荷會完全流失。

The main purpose of this dissertation was the application of the inorganic CdSe/ZnS core/shell quantum dots (QDs) in the light emitting diodes (LEDs) and organic nonvolatile memory devices. For the application in LEDs, QDs were effectively integrated into the inorganic gallium nitride-based LEDs to realize mixing light effect. For the application in organic memory devices, QDs played the role of carrier trapping, thus making the changing of the intrinsic nature of the device. Then, due to the electrical changes, the device would exhibit the nonvolatile memory properties.
In the research on LEDs, QDs were dropped on the LED chip mounted in the reflection cup. And based on the standard LED fabrication technique, the LEDs were encapsulated in the transparent epoxy resin. The used QDs had a photoluminescence (PL) emission peak at 623 nm with the full-widths at half-maximum (FWHM) of 23 nm. It was firstly observed that the luminescence color was changed from the blue light (Commission Internationale de l’Eclairage (CIE) chromaticity coordinates: x, y = 0.17, 0.07) to red light (CIE chromaticity coordinates: x, y = 0.29, 0.14) with increasing the concentration of QDs. Moreover, it was also observed that after QDs were appropriately mixed with the green conjugated conducting polymers (DBPPV), the devices exhibited pure white light emission and had the CIE chromaticity coordinates of (0.33, 0.34), color rendering index (CRI) of 76 and correlated color temperature (CCT) of 5600K.
In the study on organic memory devices, poly (2-hydroxyethyl methacrylate) (PHEMA) and poly(methylmethacrylate) (PMMA) were successfully used in the fabrication of the resistive memory devices with a sandwiched structure of metal/polymer insulator/metal. The resistive switching behaviors were caused by the filament mechanism. The conductive filaments in the PHEMA and PMMA films were composed of carbon and metal ions, respectively. Both devices showed the write-read-erase-read cycles over 500 times, retention time more than 104 seconds and current ON/OFF ration (ION/OFF) of ~104. In the study of transistor-type memory, we found that the PHEMA/PMMA/PHEMA multilayer dielectric formed by a spinning coating technique was suitably used as the dielectric layer of thin film transistors (TFTs). Furthermore, the fabricated devices also showed the hysteresis and memory characteristics because the carrier trapping and polarization effect were caused in the multi-dielectric layers by the hydroxyl (-OH) groups of PHEMA. The long retention time (longer than 2 hours) and reliable switching endurance were clearly observed. As for the research on application for QDs in the transistor-type memory, n+-Si (gate electrode)/SiO2 (dielectric layer)/QD-PMMA composites (floating gate layer)/ pentacene (channel layer)/gold (source and drain electrodes) was used as the main structure of devices. The switching mechanism was attributed to the charge trapping effect of the QD-PMMA composite. The devices exhibited the reliable switching endurance over 50 write-read-erase-read cycles. Nevertheless, the short retention time was obtained because the low barrier was existed between the channel and composite layers. From the experimental data, it could be speculated that the residual charges in composite layer were neglectable after 106 seconds.

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