本論文研製CMOS毫米波可調式混合變壓器射頻收發機雙工放大器、 使用中和技術之二路變壓器功率結合之V-band堆疊式功率放大器、及94-GHz 結合發射開關之射頻收發前端電路，設計皆採用TSMC 90-nm GUTM CMOS製程； (1) 可調式混合變壓器之射頻收發機雙工放大器: 功率放大器採用二路變壓器功率結合，低雜訊放大器則採用串接三級疊接架構實現，雙工器藉由變壓器之中央點操作於奇偶模態，訊號會有不同之特性去實現一收發電路。(2) 使用中和技術之二路變壓器功率結合之V-band CMOS堆疊式功率放大器: 除了利用電晶體堆疊來提升輸出功率，且在輸出端作功率結合使功率進一步提升，又使用中和技術(neutralization)去提升整體穩定度表現。(3) 94-GHz CMOS射頻收發機之結合發射開關前端電路: 功率放大器電路使用疊接式架構達到較高增益，採用A類之偏壓來達成較佳之線性度及功率增益，並將射頻開關融合於輸出阻抗之中。低雜訊放大器採用疊接組態且串接五級電路，前兩級電路間加入雜訊匹配電感以達最佳化雜訊之功用 ；接收端(Rx)的射頻接收開關電路主體採用行進波概念，達到寬頻響應和高隔離度特性，並搭配基極浮接與負基極偏壓技術改善插入損耗與線性度。晶片電路設計以Agilent ADS及全波電磁模擬軟體進行模擬，量測皆採用on-wafer方式。

This thesis presents the research on CMOS millimeter-wave CMOS tunable hybrid-transformer-based RF transceiver duplexer amplifiers and V-/W-band power amplifiers (PAs), fabricated by standard TSMC 90-nm GUTM CMOS process. In the MMW RF transceiver duplexer amplifiers, the PA consists of two-stage class-A cascode structure amplifier for linearity and power gain consideration. The low noise amplifier (LNA) also consists of three-stage cascode structure amplifier for gain performance. Two-way transformer combiner (?) is designed for consideration of PA output power and isolation. The balun is also utilized for emhancement of isolation performance. In the V-band CMOS power amplifier design, the stacked structure with using inter-node matching network is employed. The performance of power gain and power added efficiency (PAE) is significantly improved by inter-node matching technique. Furthermore, the neutrolization technique is used to improve the stability and gain performance. In the 94-GHz CMOS RF transceiver, a high-gain W-band PA is designed to integrate with two T/R switches and a LNA. In the design of the PA, a five-stage common-source (CS) cascade structure with gain-boosting technique is adopted for the performance of the power gain, 3-dB gain bandwidth, and gain flatness. In order to achieve a higher output power and gain performance in Tx mode, the modified output matching network is designed by combining the switch and output matching network, which can enhance the Tx output power and gain performance. On-wafer measurement is performaned for the designed MMW RFICs. Simulation and measurement results are compared and discussed.

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