本研究藉由分子設計，選擇含有低極性基團(CF3)和柔軟的醚基(ether linkage)的單體，製備出具有低介電常數和低散逸因數之聚醯亞胺(Polyimide；PI)材料。藉由phenyl phosphonic dichloride(PPD)作為活性劑，以direct polymerization方式合成出三種接有感光基團2-hydroxyethyl methacrylate(HEMA)的聚醯胺酯(Polyamic ester；PAE)，利用1H-NMR和FT-IR鑑定其結構正確性，並利用黏度計得到PAE高分子在濃度0.5 g/dL的固有黏度為0.148~0.184 dL/g。合成聚醯亞胺所選擇的單體分別是4,4'-Bisphenol A dianhydride (BPADA)、2,2'-Bis(trifluoromethyl)benzidine (TFMB)、1,4-Bis(4-aminophenoxy)benzene (APB)及2,2-Bis[4-(4-aminophenoxy)phenyl]hexafluoropropane (BAPHF)。選擇BPADA作為酸酐，其具有兩個柔軟的醚基(ether linkage)可有效降低散逸因數，而結構中的CH3基團作為拉開分子鏈間距的基團，可降低介電常數。TFMB有低極性且龐大可增加自由體積的CF3基團；APB具有兩個柔軟的醚基(ether linkage)；BAPHF則兼具低極性且龐大的CF3基團和兩個柔軟的醚基(ether linkage)。
PAE經由添加5 phr催化劑4-Hydroxybenzoic acid後，可以在200 ℃低溫下脫水閉環形成PI。在10 GHz頻率下量測其介電性質，低溫環化的PI薄膜介電常數為2.81~3.10，散逸因數為0.00581~0.00664。利用TMA所測得玻璃轉移溫度介於199~216 ℃，在50-150 ℃熱膨脹係數為92~94 ppm/℃且在拉伸測試下皆得到良好的機械性質結果。
BPADA-APB PAE和BAPDA-BAPHF PAE添加感光配方C (MK-TBPS system with TEGD 8 phr)、感光配方D (IRGACURE 784 system with TEGD 8 phr)後皆可在添加適當比例的有機溶劑中顯影，解析度皆達10 ??。其中BAPDA-BAPHF PAE搭配感光配方D (IRGACURE 784 system with TEGD 8 phr)之對比為2.45，光敏感度為400 mJ/cm2。在介電性質方面表現最佳為BPADA-BAPHF PAE搭配感光配方D (IRGACURE 784 system with TEGD 8 phr)，介電常數和非感光低溫環化PI薄膜相比下降，然而散逸因數因為感光配方中小分子的殘留而有所增加，但仍可在0.01以下。

In this study, three polyamic esters (PAEs) were synthesized from 2-hydroxyethyl methacrylate (HEMA) by means of direct polymerization using phenyl phosphonic dichloride (PPD) as the active agent. In the molecular design, 4,4'-Bisphenol A dianhydride (BPADA) was used as the dianhydride because its two ether linkages were shown to decrease the dissipation factor and its methyl group decreased the imide group content. Next, three diamines were included: 2,2'-Bis(trifluoromethyl)benzidine (TFMB), for the low polarizability of its carbon-fluorine group; 1,4-Bis(4-aminophenoxy)benzene (APB), for its two ether linkages; and 2,2-Bis[4-(4-aminophenoxy)phenyl]hexafluoropropane (BAPHF) for both its carbon-fluorine group and its two ether linkages. By adding 5 phr of 4-Hydroxybenzoic acid as the catalyst, it was possible to cure the polyamic esters at 200 ℃. The resulting polyimides (PIs) that were cured at this low temperature had the dielectric constant of around 2.8-3.1 and the dissipation factor of around 0.00581-0.00664 at 10 GHz. The BPADA-APB PAE and BPADA-BAPHF PAE could develop in cyclopentenone/isopropanol with photosensitive formulations, MK-TBPS system and IRGACURE 784 system. The pattern was obtained after curd at 200 ℃ with a resolution of 10μm. The BPADA-BAPHF PAE with IRGACURE 784 system exhibited a sensitivity of 400 mJ/cm2 and a contrast of 2.45. Furthermore, the photosensitive polyimide (PSPI), BPADA-BAPHF PI with IRGACURE 784 system cured at 200 ℃ had the low dielectric constant of 2.66 and the dissipation factor of less than 0.01 at 10 GHz.

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