奈米線蝕刻(Nanowire lithography)是一種利用奈米線作為遮罩，將其一維結構複製於基版的技術。進行蝕刻前首要的任務即是奈米遮罩的製備，本研究提出利用圖案式分子梳法將DNA奈米束轉置於基版上以其排列與奈米尺度，來定義遮罩的圖形與線寬。有別於一般DNA分子金屬化的方式，本研究首先提出預先活化DNA分子再進行拉伸、轉置及還原反應，以期能減少背景雜訊的產生。實驗結果發現，經預先活化的DNA分子，雖然可以被還原成金屬，卻無法藉由分子梳法進行拉伸，形成金屬奈米線陣列。另外，本研究亦直接利用DNA奈米束作為遮罩，進行濕蝕刻，除了可以製作金奈米模具之外，亦可定義鋁遮罩的線寬，進而將溝槽結構複製於氮化矽基版上，以作為ICP低溫矽蝕刻之遮罩，所得到的矽溝槽最小寬度約30nm。值得一提的是，藉由添加64%的甘油於DNA溶液中，雖然可以增加奈米束於矽基版的轉置率，但甘油分子會影響蝕刻的結果。

Nanowire lithography (NWL) is a technique which is utilized to produce 1-D nanostructure. The first step to perform this technique is to fabricate a nanomask. Various strategies have been applied to generate the nanomask with different materials such as metals, oxides, carbon nanotubes and biomolecules. In this study, we propose to use the patterned and stretched DNA molecules generated by the patterned molecular combing technique to serve as the nanomask and define the line width. The study includes two parts: one is DNA metallization and the other is DNA as the mask for subsequent etching processes. It is found that although the DNA molecules can be chelated with palladium ions for metallization, they cannot be stretched afterwards. As to using the patterned and stretched DNA molecules as the mask for subsequent etching processes, the results showed that the gold nanomold can be fabricated and the silicon trench with a minimum width approximately 30 nm can be produced via inductively coupled plasma processing. It is worthy of noting that although adding 64 wt% glycerin into the DNA solution facilitates transferring the patterned and stretched DNA molecules onto the substrate, it brings the undesired effect to the subsequent etching processes such as widening the line width.

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