中文摘要
　本論文主要是以電化學反應的觀點，探討使用掃描式探針原子力顯微鏡在成長OTS SAM的矽基材上進行局部陽極氧化反應的研究，目前國際間並沒有很多理論模型是針對成長OTS SAM的矽基材之局部氧化的分析。因此我們以實驗來印證C-M Model中氧化行為的趨勢。我們的實驗分成兩部分，第一部份是以實驗分析探針陽極氧化的行為。本實驗控制SPM探針氧化的各種參數，例如外加偏壓，氧化時間，大氣相對濕度，以及探針與樣品間的距離等等。將相對應各參數的實驗結果加以整理，分析出氧化物在各種參數的生成速率、電場強度、臨界電壓、臨界厚度之間的關係，並透過理論分析加以比較。第二部分為OTS SAM的運用，利用探針氧化移除OTS SAM膜並加以濕式蝕刻後的奈米溝槽，再成長（H3CNCH3）的單屬分子層膜，並利用兩種單屬分子層不同的化學特性，選擇性的在樣品表面成長金球。
　實驗結果，第一部份我們計算出實驗中的臨界氧化厚度，以及相對應的原點電場強度和氧化速率間的相對關係。在掃描速率實驗結果與理論分析比較的部分發現，在低外加偏壓（4~5V）的部分，其氧化趨勢十分接近理論值，而在6~10V時氧化物的厚度則不如預期。在第二部分，我們在選擇性長金後發現，金球成功吸附在氧化區域的機率與微影氧化區域的大小有關，小於100nm以下成功吸附的機率極小。

Abstract

　　The local anodic oxidation reaction used to grow OTS SAM on the silicon wafer is researched in the view of electrochemical reaction in this study. There are a few models for analysis of the above topics, so the tendency of oxidation behavior in C-M model is confirmed experimentally in this study. There are two parts of experiments. One is for the analysis of the anodic oxidation behavior of probe and to control the parameters such as driving bias, during time, relative humidity of atmosphere, and the distance between probe and sample…etc. Through analyzing the experimental data, the relations between the properties of oxides, such as growing rate, strength of electric field, critical bias, critical thickness, and the operating parameters are obtained. The other part, which is the application of OTS SAM, is removing OTS SAM film by oxidation of probe and etching a groove with nanometer scale, then growing molecular films of Alkyl Ammonium terminated SAM and finally growing gold balls on sample by the selectivity due to the different chemical characteristics of two molecular films.
　　From the results of the first part, the critical thickness of oxide and its corresponding relation between strength of electric field and growing rate are obtained. According to the comparison of results obtained by scanning experiments and theoretical analysis, there is good agreement in oxidation tendency between experimental and theoretical results in the case of low driving bias (4~5V); however, in the case of high bias, the great difference between experimental and theoretical results is observed. For the second part, probability that a gold ball adsorb on the oxidation zone successively depends upon the size of the oxidation zone and it goes to a tiny value in the case of the zone size is smaller than 100nm.

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