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研究生：	王嚴慶 Wang, Yen-Ching
論文名稱：	以低溫氮化鎵中間置入層方法製作氮化鎵系列紫外光檢測器及金氧半異質結構場效電晶體之研究 Investigation of GaN-based UV PDs and MOSHFETs Fabricated with a Low Temperature GaN Interlayer
指導教授：	張守進 Chang, Shoou-Jinn 陳志方 Chen, Jone Fang
學位類別：	碩士 Master
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2008
畢業學年度：	96
語文別：	英文
論文頁數：	95
中文關鍵詞：	氮化鎵、光檢測器、異質場效電晶體、差排、中間置入層
外文關鍵詞：	Dislocation, GaN, HFET, Photodetector, Interlayer
相關次數：	點閱：86 下載：1
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本論文的研究主軸為以低溫氮化鎵中間置入層方法製作氮化鎵系列紫外光檢測器及金氧半異質結構場效電晶體。本實驗中，使用有機金屬氣相化學沉積系統成長氮化鋁鎵/氮化鎵異質結構。由於氮化鎵系列材料缺少晶格匹配的適當基板，氮化鎵系列材料及其相關元件大多數成長於藍寶石基板上。然而由於氮化鎵系列材料與藍寶石基板之間的晶格常數差異甚大，造成氮化鎵磊晶薄膜內部產生較多的差排缺陷，導致元件有較高的漏電流存在。一般而言，要製備出良好品質的氮化鎵磊晶薄膜必須先成長低溫氮化鎵成核層。亦有文獻提出，低溫氮化鎵中間置入層能抑制差排缺陷竄升至後續成長之氮化鎵磊晶層。因此，我們於氮化鋁鎵/氮化鎵異質結構之氮化鎵通道層中，插入低溫氮化鎵中間置入層結構，以期改善上層氮化鋁鎵/氮化鎵異質結構之磊晶品質。
首先於氮化鋁鎵/氮化鎵磊晶薄膜特性分析方面，我們使用的分析方法包括X射線繞射儀、二次離子質譜儀、原子力顯微鏡、蝕刻凹洞缺陷密度分析與穿透率量測。從材料分析的結果可知以低溫氮化鎵中間置入層方法可有效改善氮化鋁鎵/氮化鎵異質結構之磊晶品質。
藉由上述的結果，我們進一步應用低溫氮化鎵中間置入層結構來製作氮化鎵系列紫外光檢測器與金氧半異質場效電晶體。在光檢測器元件特性分析方面，將低溫中間置入層結構應用於金半金與蕭基能障光檢測器，能達到較低的漏電流、較高的光暗電流比與紫外光對可見光拒斥比、有效抑制元件的內部增益、以及得到較低的雜訊位準與較高的元件檢測度。在異質結構場效電晶體元件特性分析方面，將低溫中間置入層結構應用於金氧半異質場效電晶體，能有效降低閘極的漏電流、達成較佳的夾止及轉導特性與較低的雜訊位準。因此，以低溫氮化鎵中間置入層結構製作氮化鎵系列紫外光檢測器與金氧半異質結構場效電晶體，在不久的未來將可應用於光電積體電路之光接收器端。

The main goal of this research is the fabrication and characterization of GaN-based ultraviolet (UV) photodetectors (PDs) and metal-oxide-semiconductor heterostructure field effect transistors (MOSHFETs) with a low temperature (LT) GaN interlayer. AlGaN/GaN heterostructures used in this experiment were prepared by metal-organic chemical vapor deposition system (MOCVD). Due to the lack of suitable lattice-matched substrates, most of the GaN-based materials and devices were grown on sapphire substrate. However, a large lattice mismatch between GaN and sapphire substrate causes a large amount of threading dislocations (TDs) embedded in the GaN epilayer, leading to extremely high leakage currents. It is known that the LT GaN layer as nucleation layer is necessary to grow high quality GaN epilayer. It is also known that LT GaN interlayer can suppress TDs extending to the subsequently grown high-temperature (HT) GaN epilayers. Therefore, a LT GaN layer was applied as an interlayer in the HT GaN channel layer of the AlGaN/GaN heterostructure.
First, material analyses of AlGaN/GaN heterostructure with a LT GaN interlayer were investigated by X-ray diffractometer (XRD), secondary ion mass spectrometer (SIMS), atomic force microscopy (AFM), etching pit density (EPD) and transmission spectra. It was found that high crystalline quality AlGaN/GaN heterostructure could be achieved with insertion of a LT GaN interlayer.
Based on the aforementioned results, we apply a LT GaN interlayer to the fabrication of GaN-based UV PDs and MOSHFETs. In the part of PDs, we demonstrate metal-semiconductor-metal (MSM) and Schottky barrier PDs by using a LT GaN interlayer with good characteristics, including low dark leakage current, high photo-to-dark current ratio, high UV-to-visible rejection ratio, suppressed internal gain, low noise level and high detectivity. In the part of HFETs, we demonstrate MOSHFETs by using a LT GaN interlayer with high performance, including low gate leakage current, low noise level, good pinch-off and transfer characteristics. Integration of GaN-based UV PDs and MOSHFETs with a LT GaN interlayer will be realized in application to monolithic receiver optoelectronic integrated circuits (receiver OEIC) in the near future.

Abstract (in Chinese)   i
Abstract (in English)    iii
Acknowledgement    v
Contents    vii
Table Captions    xi
Figure Captions    xii
Chapter 1 Introduction
1	Motivation    1 
2	Organization of the Thesis    3                 
Chapter 2 Background Review, Foundation Theory and Experimental Apparatus
1	Crystal Structure of Nitrides    6
2	Formation mechanism and effect of threading dislocations on device performance                                             6
2.1 Dislocation Formation    6
2.2 Effects of Dislocation on Device    8
3	Theory of Metal Semiconductor Contacts    8
3.1 Schottky Contacts    8
3.2 Ohmic Contacts    11
Chapter 3 Material Characteristics of AlGaN/GaN Heterostructure with a LT Interlayer
1	Influence of the LT Interlayer on the Growth Mode and Properties of the Subsequently Epilayer    18
2	AlGaN/GaN Heterostructure with a LT GaN Interlayer    19
3	Result of Material Analysis    20
3.1 XRD Analysis    20
3.2 SIMS Profiles    20
3.3 AFM Scanning    20
3.4 Etching Pit Density    21
3.5 Transmission Spectra    21
Chapter 4 GaN-based UV PDs with a LT GaN Interlayer
1	Parameters of PDs    32
1.1 Quantum Efficiency and Spectral Responsivity    32
1.2 Internal Gain    34
1.3 Low Frequency Noise Characteristics         35                                        
Part I. Metal-semiconductor-metal (MSM) PDs
2	Physics and Theory of MSM PDs    37
3	Fabrication Processes of MSM PDs 38                          
3.1 Mesa Definition    38
3.2 ITO Electrodes    39
3.3 Pad Electrodes    39
4	Results and Discussion    40
4.1 Current-Voltage (I-V) Characteristics    40
4.2 Spectral Response    40
4.3 Capacitance-Voltage (C-V) Characteristics    41
4.4 Low Frequency Noise Characteristics    43
Part II. Schottky Barrier PDs
5	Fabrication Processes of Schottky Barrier PDs    44
5.1 Mesa Definition    44
5.2 Ohmic Contat Deposition and Annealing    45
5.3 Schottky Contact Pad Deposition    45
6	Results and Discussion    45
6.1 Current-Voltage (I-V) Characteristics    45
6.2 Calculation of Schottky Barrier Height    46
6.3 Spectral Response    46
6.4 Low Frequency Noise Characteristics    46
7	Summary    47
Chapter 5 GaN-based MOSHFETs with a LT GaN Interlayer
1	Theory of HFETs characteristics    69
1.1 Piezoelectric and Spontaneous Polarization    70
1.2 Polarity    72
2	Fabrication Processes of MOSHFETs   73
2.1 Mesa Isolation    73
2.2 Source-Drain Definition    73
2.3 SiO2 Deposition and Gate Metal Definition    74
3	The Characteristics of AlGaN/GaN MOSHFETs    74
3.1 Schottky Gate Performance    74
3.2 Output and Transfer Characteristics    75
3.3 Low Frequency Noise Characteristics    76
4	Summary    76
Chapter 6 Conclusions and Future Work
1	Conclusions    87
2	Future work    87
References    89
                                    

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