本論文的研究內容針對在矽基板與碳化矽基板上的石墨烯，以原子力顯微鏡對其表面進行局部陽極氧化 (Local Anodic Oxidation ,LAO)。LAO產生的石墨烯氧化物可以利用空間解析的拉曼光譜及光電子能譜術確認。透過掃描式電子顯微鏡、原子力顯微鏡可以檢測石墨烯在不同氧化電壓下會有不同的形貌變化。以LAO在碳化矽基板上製作的方框圖像在電子顯微鏡下顯示了框內與框外的對比度差異，這可以歸因於LAO的過程改變了石墨烯的電子結構。石墨烯/石墨烯氧化物/石墨烯結構的I-V特性可以採用包含兩個串聯的蕭特基位障 (Schottky barrier)的金屬/半導體/金屬結構作為模型解釋。同時我們發現被方框侷限住的石墨烯其位障高度會隨著方框的尺寸大小而劇烈地改變。

The local anodic oxidation (LAO) of graphene on Si and SiC substrates by atomic force microscope (AFM) was shown here. The LAO-induced graphene oxide (GO) structure on graphene was demonstrated by spatially resolved Raman spectroscopy and photoelectron spectroscopy (PES). Scanning electron microscope (SEM) and AFM investigations show different topographic features with different applied oxidation voltages. By creating GO open square patterns in epitaxial graphene grown on SiC substrate using LAO, we found a SEM image contrast of graphene inside and outside the square pattern, which can be interpreted by the electronic structure manipulation of graphene induced by LAO patterning. In addition, the current-voltage characteristics of the graphene/graphene oxide/graphene sandwich structure can be modeled by conventional M-S-M structure composed of two Schottky barriers connected in series. And the barrier height of isolated graphene created by open-square pattern was found to be changed significantly with square area.

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