| 研究生: |
李珈誼 Lee, Chia-Yi |
|---|---|
| 論文名稱: |
新式砷化鎵pHEMT雙刀雙擲射頻切換開關設計及應用 A Novel GaAs pHEMT Radio Frequency DPDT Switch Design and Application |
| 指導教授: |
王永和
Wang, Yeong-Her |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年: | 2017 |
| 畢業學年度: | 105 |
| 語文別: | 英文 |
| 論文頁數: | 59 |
| 中文關鍵詞: | 單石微波積體電路 、雙刀雙擲開關 、射頻收發機 |
| 外文關鍵詞: | MMIC, DPDT switch, RF transceiver |
| 相關次數: | 點閱:107 下載:17 |
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本論文主要在研製射頻微波電路中,單刀雙擲與雙刀雙擲開關單石晶片。第一章簡單介紹此篇論文的研究背景及基礎理論,第二章為一單刀單擲微波開關,利用低通率波器取代傳統開關使用的四分之一波長傳輸線,藉以縮小晶片面積。第三章介紹一新型的雙刀雙擲開關,利用八分之一波長傳輸線加上二極體來控制訊號的流動,並且在輸出埠及輸入埠加上一個3dB耦合器,增加各端口間的隔離度並且有抑制高頻訊號通過的作用。第四章中提出一個雙刀雙擲開關之延伸應用,與功率放大器和低雜訊放大器結合,可以提高射頻前端收發系統的動態範圍,並且可以依照傳輸距離來選擇傳輸的路徑,做出做有效率的應用。
The implementation of SPDT and DPDT switch in MMIC application is presented in this thesis. The SPDT switch uses shunt-shunt transistor topology to get lower insertion loss and better isolation. The operation frequency of this work is 14 GHz – 24 GHz, the insertion loss is 3.3 dB, and the isolation of 24 dB. The structure is simple, and the chip size is 1.45mm × 1.67mm. For the DPDT switch, it utilizes diode to implement the circuit due to the smaller parasitic capacitance when frequency goes high. It also add a coupler at both input and output port to enhance port-to-port isolation and restrain the signal at high frequency. This work operates at 38 GHz – 43 GHz, the insertion loss is less than 5 dB, and isolation of 15 dB. The chip area is 1.55 mm×1.15mm. An application of the DPDT is also introduced, it combines the DPDT switch with one power amplifier and one low noise amplifier, thus forms a compact structure of a RF front-end system. It can choose its transceiver type due to the signal traveling distance.
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