| 研究生: |
羅勗誠 Lo, Hsu-cheng |
|---|---|
| 論文名稱: |
以分子動力學方法模擬在溫度與尺寸效應下有蓋之單壁奈米碳管對銅基板進行深孔加工之研究 Investigation on the nanoindentation of a copper substrate by single walled carbon nanotube tips |
| 指導教授: |
黃吉川
Hwang, Chi-Chuan |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 工程科學系 Department of Engineering Science |
| 論文出版年: | 2007 |
| 畢業學年度: | 95 |
| 語文別: | 中文 |
| 論文頁數: | 51 |
| 中文關鍵詞: | 分子動力學 、奈米碳管 、深孔加工 |
| 外文關鍵詞: | molecular dynamics simulation, carbon nanotube, deep indentation |
| 相關次數: | 點閱:87 下載:1 |
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本文利用分子動力學的方法,分析單壁奈米碳管對銅基板進行深孔加工的相關性質與現象。由研究結果指出,可將奈米碳管隨著溫度變化把加工能力依照長度區分為三大類。並藉由對深孔加工做廣泛的定量分析,顯示出只有長度較短的單壁奈米碳管在進行深孔加工的過程中不會發生挫曲的現象。利用較短的單壁奈米碳管對銅基板進行深孔加工後,會在銅基板上產生明顯的中空孔洞,而孔洞週圍的結構只受到非常輕微的影響。
Deep nanoindentation of a copper substrate by single walled carbon nanotubes (SWCNTs) has been analyzed using molecular dynamics simulations. Three categories of SWCNTs and their relationship with temperature and nanotube length have been extensively investigated. The results of this comprehensive quantitative analysis for deep indentation demonstrate that only SWCNTs with relatively short length can indent into a substrate up to a desired depth without buckling. Most notably, a permanent hollow hole with a high aspect ratio will be produced on the copper substrate, while copper atoms in close proximity to the hole are only slightly disordered.
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