光電產業為台灣重要產業之一，近年來蓬勃發展，衍生出的廢料大都含有稀貴金屬如鉬、銅、銦、鎵和硒等，但往往未被妥善地處理及回收再利用，以TFT-LCD鋁基板蝕刻廢液為例，其含有高濃度磷酸，產生廢液不僅含高濃度的金屬鉬及鋁且pH值極低，而薄膜太陽能電池濺鍍靶材為半導體、光電業常用的一種濺鍍材料，廢靶材通常含有高純度的銅、銦、鎵及硒，本研究從靶材酸溶及金屬分離兩個部分探討由TFT-LCD鋁基板蝕刻廢液（含鋁及鉬）及薄膜太陽能電池CIGS濺鍍廢靶材中分離回收金屬之可行性，廢靶材首先以硫酸及鹽酸試劑進行酸溶，目的是將銅、銦及鎵溶於溶液中，以利後續金屬分離回收試驗，接續以黃酸鹽應用於靶材酸溶液與TFT-LCD鋁基板蝕刻廢液中，調整參數條件，達到銅、銦、鎵、硒與鋁、鉬分離之可行性。
實驗結果得知，CIGS廢靶材破碎過篩後，利用酸溶的方式，透過6N硫酸試劑，加入1mL過氧化氫，在溫度140℃，反應時間2小時，可得銅、銦及鎵酸溶效率分別為98.9%、99.8%及99.4%，硫酸因電子轉移能力佳，能將大部分硒留於固體中，且硫酸試劑中亞硫酸鈉對硒的析出能力為99.9%。索式萃取能有效純化合成CSAX提高其含硫及氮的百分比，CSAX具-CSSH及-C=O官能基團，可於較低的pH值有效分離重金屬，各別分離銅及鉬金屬之效率，可達99.51%及90.84%。在CIGS濺鍍廢靶材酸溶液，最適條件為pH 1、S/M molar ratio=0.5，銅、銦及鎵分離效率分別為97.22%、4.35%及4.56%，後續調整最佳條件pH 5，銦及鎵之沉澱率達約10.58%及99.9%，在TFT-LCD實廠廢液，最適條件為pH 1、S/M molar ratio=0.5，鉬及鋁分離效率分別為90.11%及5.53 %，對銅、銦、鎵、鉬及鋁選擇性分離效果佳。另將TFT-LCD鋁基板蝕刻廢液以溶媒萃取法與螯合劑進行效率比較評析，依試驗結果選用商用萃取劑Alamine 336，其在pH 1最佳的O/A ratio為1：1，鉬及鋁萃取效率分別為98.33%及0.19%，反萃試驗則以殘餘有機相/反萃取劑比為2：1，鉬及鋁反萃取效率分別為95.97%及0.002%，反萃次數5次可達最大濃縮鉬含量1368 mg/L，黃酸鹽效率雖較萃取劑略低些，但其分離效率亦可達到90%分離率，且製作成本低廉許多，故本研究合成之CSAX 黃酸鹽來分離回收金屬是可行且具有潛力的。

Recently the growth of Optoelectronics industry in Taiwan is very quick. Many precious metals and rare elements, like molybdenum, copper, indium, gallium and selenium, have been used during making process. Wastes from the making process was seldom treated and reused well. It will cause environmental problem. Thin film transistor liquid crystal display etching waste water contain high concentration of phosphoric acid, which pH is very low and too hard too separation metal and another material is CIGS residual target, which is a semiconductor sputtering target to make the thin film solar cell and usually contain purity copper, indium, gallium and selenium. This study was to investigate the TFT-LCD etching solution (containing aluminum and molybdenum), then use the acid reagent to dissolve CIGS residual target and separation the metal. First, use the acid reagent to dissolve copper, indium and gallium, then use Sodium sulfite to separate out selenium. Second, Crosslinked starch-grafted Polyacrylamide co-Sodium Xanthate (CSAX) were synthesized in this study to investigate their feasibility to separate and recover the wastewater from Optoelectronic Industry. CIGS residual target use the acid-soluble way to dissolve, the best condition is 6N sulfuric acid reagent at temperature 140℃ and reaction time 2 hours.The acid soluble efficiency 98.9%, 99.8% and 99.4% for copper, indium and gallium, respectively. Then use CSAX into TFT-LCD etching solution and CIGS acid solution, the best condition is pH 1 and S/M molar ratio 0.5. The separate efficiency 97.22% and 90.11% for copper and molybdenum, respectively.

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