研究生: |
王義欣 Wang, Yi-Sin |
---|---|
論文名稱: |
有機金屬氣相磊晶在砷化鎵基板上成長銻砷化鎵量子井長波長雷射 Long Wavelength GaAsSb Quantum Well Lasers on GaAs Substrates Grown by MOVPE |
指導教授: |
蘇炎坤
Su, Yan-Kuin |
學位類別: |
碩士 Master |
系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
論文出版年: | 2007 |
畢業學年度: | 95 |
語文別: | 英文 |
論文頁數: | 94 |
中文關鍵詞: | 銻砷化鎵 、有機金屬氣相磊晶 |
外文關鍵詞: | GaAsSb, MOVPE |
相關次數: | 點閱:57 下載:1 |
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在網際網路頻寬需求日益增加的情況下,發展光纖通訊是未來必然的趨勢,在光纖通訊中,1310與1550奈米的波長在光纖中分別有零色散與最低損耗的優點,是長距離光纖傳輸最適合的波段。傳統在磷化銦基板成長磷砷化銦鎵量子井雷射可以達到上述波段之長波長雷射,不過在價格上卻相當的昂貴,溫度特性也差強人意。
在本論文中,我們嘗試利用有機金屬氣相磊晶系統在砷化鎵基板上成長銻砷化鎵量子井雷射來取代傳統長波長雷射,從成長銻砷化鎵塊材試片開始,利用高解析X射線繞射儀分析厚度及組成,大略了解磊晶參數對於銻砷化鎵成分和晶格品質的影響後,更進一步成長銻砷化鎵/砷化鎵的多重量子井,利用光激發螢光光譜儀來分析光特性。接下來將銻砷化鎵/砷化鎵量子井應用至邊射型雷射結構,經過邊射型雷射的製程步驟並且加以測量,我們成功的實現了銻砷化鎵/砷化鎵邊射型雷射,其中最長的雷射波長在1203奈米,是目前利用有機金屬氣相磊晶系統成長銻砷化鎵/砷化鎵邊射型雷射中,所達到最長的波長。
在未來,我們也會接著成長波長在1300奈米附近的銻砷化鎵/砷化鎵雷射,另一方面也繼續研究更長波長的銻砷化鎵/砷化銦鎵雙層量子井雷射。
Whereas the demand of internet bandwidth increasing day by day, it is a inevitable trend to develop fiber communication. In optical fiber communication, the wavelength regions of 1310nm and 1550nm have advantages of zero dispersion and lowest loss respectively. They are the most suitable transmission wavelength regions of long haul fiber communication. The long wavelength lasers can be achieved by growing InGaAsP on InP substrates traditionally. Not only it is very expensive but also the temperature characteristics are not good enough.
In this thesis, we try to grow GaAsSb QW lasers on GaAs by MOVPE to replace InP based long wavelength lasers. The layer thickness and Sb composition of GaAsSb bulk samples were analyzed by HRXRD. After understanding the effects of epitaxy parameters to GaAsSb composition and lattice quality generally, a further step to grow GaAsSb/GaAs MQW and the optical properties by using photoluminescence were proceeded and analyzed. Then GaAsSb/GaAs edge emitting lasers were fabricated, GaAsSb/GaAs edge emitting lasers are demonstrated successfully. The longest lasing wavelength we achieved is 1203nm. To our knowledge, it’s the longest lasing wavelength of GaAsSb/GaAs edge emitting lasers grown by MOVPE.
In the future, we will continue to grow GaAsSb/GaAs QW lasers near 1300nm. On the other hand, we will also go on to investigate GaAsSb/InGaAs bi-layer QW lasers for longer wavelength.
Chapter 1 Reference:
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[9].T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei and S. Sugou, "Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs", Electron. Lett., vol. 37, no. 9, pp. 566-567, 2001
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Chapter 2 Reference :
[1].G.B. Stringfellow, “Organometallic Vapor-Phase Epitaxy: Theory and Practice”, 2nd Edition, Academic Press, San Diego, 1999.
Chapter 3 Reference:
[1].T. Anan, K. Nishi, S. Sugou, M. Yamada, K. Tokutome and A. Gomyo, "GaAsSb: A novel material for 1.3 mu m VCSELs", Electron. Lett., vol. 34, no. 22, pp. 2127-2129, 1998
[2].T. Anan, M. Yamada, K. Tokutome, S. Sugou, K. Nishi and A. Kamei, "Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers", Electron. Lett., vol. 35, no. 11, pp. 903-904, 1999
[3].M. Yamada, T. Anan, K. Tokutome, A. Kamei, K. Nishi and S. Sugou, "Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates", IEEE Photon. Technol. Lett., vol. 12, no. 7, pp. 774-776, 2000
[4].T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei and S. Sugou, "Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs", Electron. Lett., vol. 37, no. 9, pp. 566-567, 2001
[5].P. W. Liu, M. H. Lee, H. H. Lin and J. R. Chen, "Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy", Electron. Lett., vol. 38, no. 22, pp. 1354-1355, 2002
[6].O. Blum and J. F. Klem, "Characteristics of GaAsSb Single-Quantum-Well-Lasers Emitting Near 1.3 um", IEEE Photon. Technol. Lett., vol. 12, no. 7, pp. 771-773, 2000
[7].S. W. Ryu and P. D. Dapkus, "Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates", Electron. Lett., vol. 36, no. 16, pp. 1387-1388, 2000
[8].M. S. Noh, R. D. Dupuis, D. P. Bour, G. Walter and N. Holonyak, "Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition", Appl. Phys. Lett., vol. 83, no. 13, pp. 2530-2532, 2003
[9].Irene Ecker, Susanne Menzel and Jurgen Joos,”Gas Source Molecular Beam Epitaxy of GaAsSb Based Laser Diodes for the Long Wavelength Range”, Annual report, Dept. of Optoclectronics, university of Ulm, 1999
[10].S. Q. Yu, X. Jin, S. R. Johnson and Y. H. Zhang, "Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers", J. Vac. Sci. Technol. B, vol. 24, no. 3, pp. 1617-1621, 2006
[11].Z.B. Chen, S.R. Johnson, C. Navarro, S. Chaparro, J. Xu, N. Samal, J. Wang,Y. Cao, S. Yu, and Y.-H. Zhang, “Strain compensated GaAsP/GaAsSb/GaAs 1.3 um lasers grown on GaAs using MBE”, CLEO, pp.209, 2001.
[12].P. W. Liu, G. H. Liao and H. H. Lin, "1.3 mu m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy", Electron. Lett., vol. 40, no. 3, pp. 177-179, 2004
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[15].R. Teissier, D. Sicault, J. C. Harmand, G. Ungaro, G. Le Roux and L. Largeau, "Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs", J. Appl. Phys., vol. 89,no. 10, pp. 5473-5477, 2001
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[27].K. G. Merkel, V. M. Bright, M. A. Marciniak, C. L. A. Cerny and M. O. Manasreh, "Temperature-Dependence of the Direct-Band-Gap Energy and Donor-Acceptor Transition Energies in Be-Doped GaAsSb Lattice-Matched to InP", Appl. Phys. Lett., vol. 65, no. 19, pp. 2442-2444, 1994
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[29].H. Ito and T. Kobayashi, "Influence of lattice mismatch on the crystalline quality of metastable GaAsSb grown by metalorganic chemical vapor deposition", J. Crystal Growth, vol. 173, no. 1-2, pp. 210-213, 1997
[30].M. Peter, K. Winkler, M. Maier, N. Herres, J. Wagner, D. Fekete, K. H. Bachem and D. Richards, "Realization and Modeling of a Pseudomorphic (Gaas1-Xsbx-Inyga1-Yas)/Gaas Bilayer-Quantum Well", Appl. Phys. Lett., vol. 67, no. 18, pp. 2639-2641, 1995
[31].B. E. Hawkins, A. A. Khandekar, J. Y. Yeh, L. J. Mawst and T. F. Kuech, "Effects of gas switching sequences on GaAs/GaAs1-Sb-y(y) superlattices", J. Crystal Growth, vol. 272, no. 1-4, pp. 686-693, 2004
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Chapter 4 Reference:
[1].M. J. Cherng, G. G. Stringfellow, and R. M. Cohen, “Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5”, Appl. Phys. Lett., vol. 44, no. 7, pp. 677-679, 1984
[2].M. Pristovsek, M. Zorn, U. Zeimer and M. Weyers, "Growth of strained GaAs1-xSbx layers on GaAs(001) by MOVPE", J. Crystal Growth, vol. 276, no. 3-4, pp. 347-353, 2005
[3].B. E. Hawkins, A. A. Khandekar, J. Y. Yeh, L. J. Mawst and T. F. Kuech, "Effects of gas switching sequences on GaAs/GaAs1-Sb-y(y) superlattices", J. Crystal Growth, vol. 272, no. 1-4, pp. 686-693, 2004
[4].M. Dinu, J. E. Cunningham, F. Quochi and J. Shah, "Optical properties of strained antimonide-based heterostructures", J. Appl. Phys., vol. 94, no. 3, pp. 1506-1512, 2003
[5].F. Quochi, D. C. Kilper, J. E. Cunningham, M. Dinu and J. Shah, "Continuous-wave operation of a 1.3-mu m GaAs1-xSbx-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature", IEEE Photon. Technol Lett., vol. 13, no. 9, pp. 921-923, 2001
[6].Y. S. Chiu, M. H. Ya, W. S. Su and Y. F. Chen, "Properties of photoluminescence in type-II GaAs1-xSbx/GaAs multiple quantum wells", J. Appl. Phys., vol. 92, no. 10, pp. 5810-5813, 2002
[7].X. D. Luo, C. Y. Hu, Z. Y. Xu, H. L. Luo, Y. Q. Wang, J. N. Wang and W. K. Ge, "Selectively excited photoluminescence of GaAs1-xSbx/GaAs single quantum wells", Appl. Phys. Lett., vol. 81, no. 20, pp. 3795-3797, 2002
[8].D. S. Jiang, L. F. Bian, X. G. Liang, K. Chang, B. Q. Sun, S. Johnson and Y. H. Zhang, "Structural and optical properties of GaAs1-xSbx/GaAs heterostructure quantum wells", J. Crystal Growth, vol. 268, no. 3-4, pp. 336-341, 2004
[9].R. Teissier, D. Sicault, J. C. Harmand, G. Ungaro, G. Le Roux and L. Largeau, "Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAs1-xSbx on GaAs", J. Appl. Phys., vol. 89, no. 10, pp. 5473-5477, 2001
Chapter 5 Reference :
[1].T. Anan, K. Nishi, S. Sugou, M. Yamada, K. Tokutome and A. Gomyo, "GaAsSb: A novel material for 1.3 mu m VCSELs", Electron. Lett., vol. 34, no. 22, pp. 2127-2129, 1998
[2].M. Kondow, T. Kitatani, S. Nakatsuka, M. C. Larson, K. Nakahara, Y. Yazawa, M. Okai and K. Uomi, "GaInNAs: A novel material for long-wavelength semiconductor lasers", IEEE J. Select. Topics Quantum Electron., vol. 3, no. 3, pp. 719-730, 1997
[3].M. Yamada, T. Anan, K. Tokutome, A. Kamei, K. Nishi and S. Sugou, "Low-threshold operation of 1.3-mu m GaAsSb quantum-well lasers directly grown on GaAs substrates", IEEE Photon. Technol. Lett., vol. 12, no. 7, pp. 774-776, 2000
[4].S. Q. Yu, X. Jin, S. R. Johnson and Y. H. Zhang, "Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers", J. Vac. Sci. Technol. B, vol. 24, no. 3, pp. 1617-1621, 2006
[5].P. W. Liu, M. H. Lee, H. H. Lin and J. R. Chen, "Low-threshold current GaAsSb/GaAs quantum well lasers grown by solid source molecular beam epitaxy", Electron. Lett., vol. 38, no. 22, pp. 1354-1355, 2002
[6].O. Blum and J. F. Klem, "Characteristics of GaAsSb Single-Quantum-Well-Lasers Emitting Near 1.3 um", IEEE Photon. Technol. Lett., vol. 12, no. 7, pp. 771-773, 2000
[7].S. W. Ryu and P. D. Dapkus, "Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates", Electron. Lett., vol. 36, no. 16, pp. 1387-1388, 2000
[8].M. S. Noh, R. D. Dupuis, D. P. Bour, G. Walter and N. Holonyak, "Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition", Appl. Phys. Lett., vol. 83, no. 13, pp. 2530-2532, 2003
[9].Irene Ecker, Susanne Menzel and Jurgen Joos,”Gas Source Molecular Beam Epitaxy of GaAsSb Based Laser Diodes for the Long Wavelength Range”, Annual report, Dept. of Optoclectronics, university of Ulm, 1999
[10].S. Q. Yu, X. Jin, S. R. Johnson and Y. H. Zhang, "Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb/GaAs quantum well lasers", J. Vac. Sci. Technol. B, vol. 24, no. 3, pp. 1617-1621, 2006
[11].Z.B. Chen, S.R. Johnson, C. Navarro, S. Chaparro, J. Xu, N. Samal, J. Wang,Y. Cao, S. Yu, and Y.-H. Zhang, “Strain compensated GaAsP/GaAsSb/GaAs 1.3 um lasers grown on GaAs using MBE”, CLEO, pp.209, 2001.
[12].P. W. Liu, G. H. Liao and H. H. Lin, "1.3 mu m GaAs/GaAsSb quantum well laser grown by solid source molecular beam epitaxy", Electron. Lett., vol. 40, no. 3, pp. 177-179, 2004
Chapter 6 Reference :
[1].T. Anan, K. Nishi, S. Sugou, M. Yamada, K. Tokutome and A. Gomyo, "GaAsSb: A novel material for 1.3 mu m VCSELs", Electron. Lett., vol. 34, no. 22, pp. 2127-2129, 1998
[2].T. Anan, M. Yamada, K. Tokutome, S. Sugou, K. Nishi and A. Kamei, "Room-temperature pulsed operation of GaAsSb GaAs vertical-cavity surface-emitting lasers", Electron. Lett., vol. 35, no. 11, pp. 903-904, 1999
[3].F. Quochi, J. E. Cunningham, M. Dinu and J. Shah, "Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 mu m", Electron. Lett., vol. 36, no. 25, pp. 2075-2076, 2000
[4].T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei and S. Sugou, "Continuous-wave operation of 1.30 mu m GaAsSb/GaAs VCSELs", Electron. Lett., vol. 37, no. 9, pp. 566-567, 2001
[5].F. Quochi, D. C. Kilper, J. E. Cunningham, M. Dinu and J. Shah, "Continuous-wave operation of a 1.3-mu m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature", IEEE Photon. Technol. Lett., vol. 13, no. 9, pp. 921-923, 2001
[6].P. Dowd, S. R. Johnson, S. A. Feld, M. Adamcyk, S. A. Chaparro, J. Joseph, K. Hilgers, M. P. Horning, K. Shiralagi and Y. H. Zhang, "Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications", Electron. Lett., vol. 39, no. 13, pp. 987-988, 2003