近年來隨著顯示器像素（Pixel）尺寸的日益縮減，電晶體所佔有的面積比例就越大，元件發光效率所受的影響也將更甚。上發光型OLED因為不受到下方TFT基板阻隔的影響，理論上能獲得更優異的發光效率，亦有助於增加有機材料的使用壽命，此時位於出光面的透明陰極所扮演的角色將更顯重要。本論文主要即是針對透明陰極進行相關的研究探討。實驗首先選擇含有10 wt.%氧化鋅的氧化銦鋅靶材，並利用直流磁控濺鍍的方式於玻璃基板上沉積IZO薄膜；藉由相關製程參數的調整以得到最佳特性的導電薄膜，其製程條件分別是在腔體壓力0.07 Pa、濺鍍功率200 W、所通入的氧氣流量比例為3.3%，當鍍膜厚度為100 nm時，其片電阻值可達38.6 Ω/□，而薄膜的可見光穿透率亦可維持約90%以上的水準。
然而IZO導電膜目前仍不適合直接製備於上發光有機元件之透明陰極上，除了電子注入效率不佳之外，更存有因濺鍍而損傷下層有機材料的疑慮，但若採用薄金屬搭配導電膜此複合結構的方式，不僅可提昇元件整體的發光效率，更可增強金屬陰極對於水氧氣的耐受度。當我們利用100 nm厚度的IZO導電膜搭配7 nm厚度的鎂銀合金，所製備出的上發光有機元件其電流-電壓特性與使用15 nm合金陰極接近。若將鎂銀合金厚度提高至10 nm 的厚度，則其元件在5 V時更可獲得超過6000 cd/m2的最高亮度。

This experiment is mainly to study the characteristics of transparent cathode layer of top emission organic light emitting device. First of all, the method to use sputter deposits IZO films deposition by sputtering film, and change the experimental parameter in order to prepare out the best IZO film. When thickness is 100 nm, sheet resistance is 38.6 Ω/□ and visible transmittance can also keep more than about 90% of the levels. While making the top emission organic light emitting device, the Mg-Ag alloy film can increase the electron and run into efficiency and prevent sputter damage. IZO film can increase luminosity completely of device and delay the moisture and oxygen invade. Use Mg-Ag alloy of 10 nm thickness to combine with IZO film of 100 nm thickness, device has the high most light one that exceeds 6000
cd/m2 when 5 V.

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