BaZnO2展現出與α石英族相似的結構對稱性，但擁有更好的壓電性質與更高的相轉變溫度。因此，它有望成為高功率壓電材料的候選。
　　然而，由於僅有少數關於BaZnO2的研究，其較簡易的製程方式未被探討，且物理及化學性質也尚未被理解。根據文獻，BaZnO2可以在使用極高溫度的方法下被製成。在我們最近的研究裡，BaZnO2奈米線已可成功藉由溶熱法合成，且諸如pH值與基板等因素則被納入考慮。由XRD結果則顯示BaZnO2繞射峰與少數的雜質。從SEM影像中可以發現FTO基板上的長形且具高密度的BaZnO2奈米線。由TEM則可確認單晶的BaZnO2與其(101 ̅2)、(202 ̅0)、(303 ̅2)等面，及其沿著[0001]的成長方向。由XPS所計算的BaZnO2原子比例顯示其鋇原子缺乏的結構，且其可能源自於BaCO3的形成與沉澱。電性量則可用來探討BaZnO2壓電子/壓電光電子性質，且計算蕭特機能障高度的變化。

BaZnO2 exhibits a similar structural alignment with α-quartz; however, it possesses better piezoelectric properties and higher transition temperature. Thus, it represents a promising candidate for high-performance piezoelectric materials.
However, only a few investigations had been employed, its facile fabrication is yet to be explored, and its physical and chemical properties are still not well understood. From literature, BaZnO2 was fabricated through the use of extremely high temperature method. In the current study, BaZnO2 nanowires were successfully synthesized by the solvothermal method. Parameters such as pH values and substrates were considered. The XRD results showed BaZnO2 peaks with minor impurities. Long and high density BaZnO2 nanowires were observed on the FTO substrates from the SEM images. The single crystalline nature of BaZnO2 at the planes of (101 ̅2), (202 ̅0), and (303 ̅2) and the growth direction along [0001] were ascertained by TEM analysis. The atomic ratio of BaZnO2 calculated from the XPS results revealed a Ba deficient structure, which might be due to the BaCO3 precipitation. Electrical measurements were employed to study the piezotronic/piezophototronic properties of BaZnO2 and the Schottky barrier height variation was also calculated.

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