| 研究生: |
黃國瑋 Hunag, Guo-Wei |
|---|---|
| 論文名稱: |
CuO對銻摻雜氧化錫之燒結緻密化與導電性質影響 |
| 指導教授: |
洪敏雄
Hon, Min-Hsiung |
| 學位類別: |
碩士 Master |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2005 |
| 畢業學年度: | 93 |
| 語文別: | 中文 |
| 論文頁數: | 71 |
| 中文關鍵詞: | 導電性 、緻密化 、燒結 、氧化錫 |
| 外文關鍵詞: | densification, tin oxide, conductivity, sintering |
| 相關次數: | 點閱:72 下載:5 |
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SnO2所具有表面擴散與高溫蒸發凝結的特性導致其燒結緻密化困難。對SnO2:Sb2O3、SnO2:CuO與SnO2:Sb2O3:CuO三種系列成分在1300℃燒結之實驗發現,Sb2O3的摻雜對SnO2導電性質的提升可有顯著的效果。在SnO2:Sb2O3系列中,2 mol % Sb2O3的摻雜可降低SnO2室溫電阻率約6個數量級之多,達1.21×10-2 Ω-cm,然而卻會造成燒結緻密化的更加惡化,此系列試片之相對密度僅為55~57%左右。另一方面,以CuO作為助燒結劑,只需少量(0.5 mol %)便能達成96%相對密度以上的高緻密化效果,但電阻率量測結果顯示對SnO2導電性質有負面影響,其室溫電阻率升高約2~3個數量級。
實驗結果顯示Sb-Cu-O系統在高溫下的反應中, =1~2之試片仍可達92%以上之相對密度,顯示在900℃時Sb2O3與CuO之間形成CuSb2O6的反應並不致於耗盡成分中的CuO。
兼具高度緻密化與良好導電性的試片可在2 mol% Sb2O3-2 mol% CuO之添加比例得到,其相對密度為94.8%,而室溫電阻率為2.54×10-2 Ω-cm。結果顯示Sb2O3對燒結緻密性與CuO對導電性質的負面效應,可以藉由兩者的適當比例添加達到相互補償的效果。亦即,在SnO2中添加Sb2O3與CuO,可在達到高緻密度的情況之下,仍保留良好的導電性質。
The poor sintering capacity of SnO2 is characterized as the non-densifying mechanisms such as surface diffusion and evaporaton-
condensation. Samples of SnO2:Sb2O3, SnO2:CuO and SnO2:Sb2O3: CuO composition systems were investigated as sintered at 1300℃ for 2 hours, the results show that doping with Sb2O3 can effectively decrease the room-temperature resistivity of SnO2 by about 6 orders of magnitude. In the SnO2:Sb2O3 system, specimen doped with 2 mol% Sb2O3 shows the lowest resistivity of 1.21×10-2 Ω-cm. However, the dopant is found to further deteriorate densification of SnO2, which all samples of this system show a low relative density ranged from 55 to 57%.
It is found that CuO can largely promote the densification of SnO2 during sintering. Adding a small amount (0.5 mol% ) of CuO can raise the relative density of samples up to more than 96%. However, the measured values of resistivity indicate that the effect caused by CuO on conductivity is negative.
In the SnO2:Sb2O3:CuO composition system it is found that the samples of =1~2 in present study still show high values of relative density over 92% after sintering. This result suggests that the formation reaction of CuSb2O6 occurs at about 900℃may not completely consume CuO in specimens.
Finally, materials combined high density and good electrical conductivity are obtained by jointly adding Sb2O3 and CuO to SnO2. The lowest room-temperature resistivity of 2.54×10-2 Ω-cm as measured in specimen containing 2 mol% Sb2O3 and 2 mol% CuO is effectively densified to 94.8% relative density. The negative effects on densification due to addition of Sb2O3 and on conductivity caused by CuO seems can be compensated by jointly adding both of them.
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