[1] E. Monroy, F. Omn`es and F. Calle, “Wide-bandgap semiconductor ultraviolet photodetectors,” Semicond. Sci. Technol. 18, R33–R51 (2003).
[2] Z.Q. Xu, H. Deng, J. Xie, Y. Li, X.T. Zu et al., "Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol–gel method," Appl. Surf. Sci. 253, 476–479 (2008).
[3] L. Luo, Y.F. Zhang, S.S. Mao, L.W. Lin et al., "Fabrication and characterization of ZnO nanowires based UV photodiodes," Sens. Actuator A Phys. 127, 201–206 (2003).
[4] H. Ohta, and H. Hosono, " Transparent oxide optoelectronics," Mater. Today 7, 42–51 (2004).
[5] F. Neele, and R. Schleijpen, “Electro-optical missile plume detection,” Proc. of SPIE 5075, 270–280 (2003).
[6] R. Debnath, T. Xie, B. Wen, and W. Li, “A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector,” RSC Adv. 5, 14646–14652 (2015).
[7] A. B. Yadav, A. Pandey, and D. Somvanshi, “Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes," IEEE Trans. Electron Devices 62, 1879–1884 (2015).
[8] J. Yang, L. Tang, W. Luo, S. Feng, C. Leng, H. Shi et al., “Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer,” ACS Appl. Mater. Interfaces 13, 4692–4702 (2021).
[9] K. Lee, K. T. Kim, J. M. Choi, M. S. Oh, D. K. Hwang, S. Jang et al., “Improved dynamic properties of ZnO-based photo-transistor with polymer gate dielectric by ultraviolet treatment,” J. Phys. D 41, 1–5 (2008).
[10] C. Sharma, N. Sharma, P. Sharma, and V. Kumar, “A Review of BJT Based Phototransistor,” Int. J. Eng. Sci. 3, 2278–0181(2014).
[11] B. J. Kim, N. K. Cho, S. Park, S. Jeong, D. Jeon, Y. Kang et al., “Highly transparent phototransistor based on quantum-dots and ZnO bilayers for optical logic gate operation in visible-light,” RSC Adv. 10, 16404–16414(2020).
[12] C. Pernot, A. Hirano, M. Iwaya, T. Detchprohm, H. Amano, I. Akasaki et al., “Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes,” Jpn. J. Appl. Phys. 39, 387–389 (2000).
[13] S. Yang, D. Zhou, H. Lu, D. Chen, F. Ren, R. Zhang et al., “4H-SiC p-i-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation,” IEEE Photon. Technol. Lett. 28(11), 1189–1192 (2016).
[14] J. D. Hwang, F. H. Wang, C. Y. Kung, and M. C. Chan, “Using the Surface Plasmon Resonance of Au Nanoparticles to Enhance Ultraviolet Response of ZnO Nanorods-Based Schottky-Barrier Photodetectors,” IEEE Trans. Nanotechnol. 14(2), 318–321 (2015).
[15] T.F. Zhang, G.A. Wu, J.Z. Wang, Y.Q. Yu, D.Y. Zhang, D.D. Wang et al., “A sensitive ultraviolet light photodiode based on graphene-on-zinc oxide Schottky junction,” Nanophotonics 6(5), 1073–1081 (2016).
[16] M. Patel, H.-S. Kim, and J. Kim, “All Transparent Metal Oxide Ultraviolet Photodetector,” Adv. Electron. Mater. 1(11), 1500232 (2015).
[17] R. Debnath, T. Xie, B. Wen, W. Li, J. Y. Ha, N. F. Sullivan et al., “A solution-processed high-efficiency p-NiO/n-ZnO heterojunction photodetector,” RSC Adv. 5, 14646–14652 (2015).
[18] D. Y. Kim, J. Ryu, J. Manders, J. Lee, and F. So, “Air-Stable, Solution-Processed Oxide p–n Heterojunction Ultraviolet Photodetector,” ACS Appl. Mater. Interfaces 6(3), 1370–1374 (2014).
[19] W. L. Huang, M. H. Hsu, S. P. Chang, S. J. Chang, and Y. Z. Chiou, “Indium Gallium Oxide Thin Film Transistor for Two-Stage UV Sensor Application,” ECS J. Solid State Sci. Technol. 8(7), 3140–3143 (2019).
[20] M. H. Hsu, J. C. Syu, S. P. Chang, W. L. Huang, S. J. Chang et al., “Photoresponses of Gallium Zinc Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Method,” IEEE Sens. Lett. 2(4), 1–4 (2018).
[21] W. L. Huang, C. C. Yang, S. P. Chang, and S. J. Chang, “Photoresponses of Zinc Tin Oxide Thin-Film Transistor,” J. Nanosci. Nanotechnol. 20(3), 1704–1708 (2020).
[22] H. M. Chen, T. C. Chang, Y. H. Tai, Y. C. Chen, M. C. Yang, C. H. Chou et al., “Ultrahigh Sensitivity Self-Amplification Phototransistor Achieved by Automatic Energy Band Lowering Behavior,” IEEE Trans. Electron Devices 61(9), 3186–3190 (2014).
[23] J. H. Kim, U. K. Kim, Y. J. Chung, and C. S. Hwang, “Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination,” Appl. Phys. Lett. 98, 232102 (2011).
[24] I. Soga, A. Komuro, and O. Tsuboi, “Rectifying characteristics of thin film self-switching devices with ZnO deposited by atomic layer deposition,” Electron. Lett. 48(15), 914–916 (2012).
[25] Z. Wang, F. H. Alshammari, H. Omran, M. K. Hota, H. A. Al-Jawhari, K. N. Salam et al., “All-Oxide Thin Film Transistors and Rectifiers Enabling On-Chip Capacitive Energy Storage,” Adv. Electron. Mater. 5(12), 1900531 (2019).
[26] Y. Zhang, Z. Mei, S. Cui, H. Liang, Y. Liu, X. Du et al., “Flexible Transparent Field-Effect Diodes Fabricated at Low-Temperature with All-Oxide Materials,” Adv. Electron. Mater. 2(5), 1500486 (2016).
[27] B. Tiwari, P. G. Bahubalindruni, A. Santa, J. Martins, P. Mittal, J. Goes et al., “Oxide TFT rectifiers on flexible substrates operating at NFC frequency range,” IEEE J. Electron Devices Soc. 7, 329–334 (2019).
[28] S. H. Cho, S. W. Kim, W. S. Cheong, C. W. Byun, C.-S. Hwang, K. I. Cho et al., “Oxide Thin Film Transistor Circuits for Transparent RFID Applications,” IEICE Trans. Electron. 93(10), 1504–1510 (2010).
[29] M. Wang, L. Liang, H. Luo, S. Zhang, H. Zhang, K. Javaid et al., “Threshold Voltage Tuning in a-IGZO TFTs With Ultrathin SnOx Capping Layer and Application to Depletion-Load Inverter,” IEEE Electron Device Lett. 37(4), 422–425 (2016).
[30] J. Yu, K. Javaid, L. Liang, W. Wu, Y. Liang, A. Song et al., “High- Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction,” ACS Appl. Mater. Interfaces 10, 8102–8109 (2018).
[31] H. Kim, S. Yang, K. Park, P. Shanmugam, and J.-Y. Kwon, “Leakage Current Analysis Depends on Grain SizeVariation in Zinc Oxide Thin Film Transistor,” 224th ECS Meet., 76 (2013).
[32] J. Y. Choi and S. Y. Lee, “Comprehensive review on the development of high mobility in oxide thin film transistors,” J. Korean Phys. Soc. 71(9), 516–527 (2017).
[33] Ü. Özgür et al., “A comprehensive review of ZnO materials and devices,” J. Appl. Phys. 98(4), 041301 (2005).
[34] Ü. Özgür, D. Hofstetter, and H. Morkoç, “ZnO Devices and Applications: A Review of Current Status and Future Prospects,” Proc. IEEE Proc. 98(7), 1255–1268 (2010).
[35] J.Y. Kwon, D.J. Lee, and K.B. Kim, "Review paper: Transparent amorphous oxide semiconductor thin film transistor," Electron. Mater. Lett. 7(1), 1–11 (2011).
[36] C. B. Ong, L. Y. Ng, and A. W. Mohammad, “A review of ZnO nanoparticles as solar photocatalysts: Synthesis, mechanisms and applications,” Renew.Sust. Energ. Rev. 81, 536–551 (2018).
[37] H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application," J. Non-Cryst. Solids 352, 851–858 (2006).
[38] J. Y. Kwon, J. S. Jung, K. S. Son, K. H. Lee, J. S. Park, T. S. Kim et al., “Investigation of Light-Induced Bias Instability in Hf-In-Zn-O Thin Film Transistors: A Cation Combinatorial Approach,” J. Electrochem. Soc. 158(4), 433–437 (2011).
[39] S. Lany and A. Zunger, “Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors,” Phys. Rev. B 72, 035215 (2005).
[40] S. Parthiban and J.Y. Kwon, "Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor," J. Mater. Res. 29(15), 1585–1596 (2014).
[41] H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application," J. Non-Cryst. Solids 352(9-20), 851–858 (2006).
[42] K. Ghaffarzadeh et al., "Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress," Appl. Phys. Lett. 97, 113504 (2010).
[43] M. D. H. Chowdhury, P. Migliorato, and J. Jang, "Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors," Appl. Phys. Lett. 97, 173506 (2010).
[44] H. W. Park, J. Bae, H. Kang, D. H. Kim, P. Jung, H. Park et al., “A Study on the Hot Carrier Effect in InGaZnO Thin Film Transistors,” Dig. Tech. Pap. - SID Int. Symp. 19, 1222–1225 (2019).
[45] L. Xiao, Y. Zhao, Y. Yang, Y. Cao, X. Ai, H. Yang et al., “Enhanced electrochemical stability of Al-doped LiMn2O4 synthesized by a polymer-pyrolysis method,” Electrochim. Acta 54, 545–550 (2008).
[46] S.Y. Lee, T. Kang, S. M. Han, and Y. S. Lee, “Temperature dependence of SilnZnO thin film transistor fabricated by solution process,” Trans. Electr. Electron. Mater. 16, 46–48 (2014).
[47] G.H. Kim, W.H. Jeong, B.D. Ahn, H.S. Shin, H.J. Kim, H.J. Kim et al., “Investigation of the effects of Mg incorporation into InZnO for high-performance and high-stability solution-processed thin film transistors,” Appl. Phys. Lett. 96, 163506 (2010).
[48] J. i. Park, Y. Lim, M. Jang, S. i. Choi, N. Hwang, M. Yi et al., “Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor,” Mater. Res. Bull. 96, 155–159 (2017).
[49] S. Jian, H. Yanhua, and G. Hao, “Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system,” J. Appl. Phys. 110, 023709 (2011).
[50]Y. Gao, J. Lu, J. Zhang, and X. Li, “The energy band tailored by Al incorporation in solution-processed IZO TFTs,” RSC Adv. 5(47), 37635–37639 (2015).
[51] A. Reed, C. Stone, K. Roh, H. W. Song, X. Wang, M. Liu et al., “The role of third cation doping on phase stability, carrier transport and carrier suppression in amorphous oxide semiconductors,” J. Mater. Chem. C 8, 13798–13810 (2020).
[52] T. H. Cheng, S. P. Chang, and S. J. Chang, “Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors,” J. Electron. Mater. 47(11), 6923–6928 (2018).
[53] W. Xu, J. Jiang, L. Han, and X. Feng, “Highly efficient UV-Ozone treatment for IAZO active layer to facilitate the low temperature fabrication of high performance thin film transistors,” Ceram. Int. 46(11), 17295–17299 (2020).
[54] J. Zhang, J. Lu, Q. Jiang, B. Lu, X. Pan, L. Chen et al., “Stability of amorphous InAlZnO thin-film transistors,” J. Vac. Sci. Technol. B 32(1), 010602 (2014).
[55] D. Adler and J. Feinleib, “Electrical and Optical Properties of Narrow-Band Materials,” Phys. Rev. B 2(8), 3112–3134 (1970).
[56] A. Kunz, “Electronic structure of NiO,” J. Phys. C: Solid State Phys. 14(16), L455–L460 (1981).
[57] I. Austin and N. Mott, “Polarons in crystalline and non-crystalline materials,” Adv. Phys. 50(7), 757–812 (2010).
[58] S. Dudarev, G. Botton, S. Savrasov, C. Humphreys and A. Sutton, “Electron-energy-loss spectra and the structural stability of nickel oxide:An LSDA+U study,” Phys. Rev. B 57(3), 1505–1509 (1998).
[59] S. Yasuno, T. Kugimiya, S. Morita, A. Miki, F. Ojima, S. Sumie et al., “Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method,” Appl. Phys. Lett. 98(10), 102107 (2011).
[60] O. Katz, G. Bahir, and J. Salzman, “Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 84(20), 4092–4094 (2004).
[61] K. Park, J. H. Kim, T. Sung, H.-W. Park, J.-H. Baeck, J. Bae et al., “Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping,” IEEE Trans. Electron Devices 66(1), 457–463 (2019).
[62] C. P. Auth and J. D. Plummer, “Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET’s,” IEEE Electron Device Lett. 18(2), 74–76 (1997).
[63] D. A. Neamen, Semiconductor physics and devices: Basic principles, 4th ed., McGraw-Hill, 2012.
[64] A. Wang, B. H. Calhoun, and A. p. chandrakasan, Sub-threshold Design for Ultra Low-Power Systems, Springer, 2006.
[65] S. Jun, C. Jo, H. Bae, H. Choi, D. H. Kim, D. M. Kim et al., "Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors," IEEE Electron Device Lett. 34(5), 641–643 (2013).
[66] O. Weber, M. Cassé, L. Thevenod, F. Ducroquet, T. Ernst, S. Deleonibus et al., "On the mobility in high-κ/metal gate MOSFETs: Evaluation of the high-κ phonon scattering impact," Solid-State Electron. 50(4), 626–631 (2006).
[67] M. C. J. M. Vissenberg, and M. Matters, “Theory of the field-effect mobility in amorphous organic transistors,” Phys. Rev. B 57, 12964–12967 (1998).
[68] B. Laikhtman, and P. M. Solomon, "Remote phonon scattering in field-effect transistors with a high κ insulating layer," J. Appl. Phys. 103(1), 014501 (2008).
[69] S. Park, E. N. Cho, and I. Yun, “Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors,” Solid-State Electron. 75, 93–96 (2012).
[70] C. S. Chiang, S. Martin, J. Kanicki, Y. Ugai, T. Yukawa, S. Takeuchi et al., "Top-Gate Staggered Amorphous Silicon Thin-Film Transistors: Series Resistance and Nitride Thickness Effects,” J. Appl. Phys. 37, 5914–5920 (1998).
[71] Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 2nd Ed., Cambridge Univ. Press, 2009.
[72] E. N. Cho, J. H. Kang, C. E. Kim, P. Moon, and I. Yun, “Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors,” IEEE Trans. Device Mater. Reliab. 11(1), 112–117 (2011).
[73] B. Y. Su, S. Y. Chu, Y. D. Juang, and S. Y. Liu, "Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors," J. Alloys Compd. 580, 10–14 (2013).
[74] K. A. Kim, M. J. Park, W. H. Lee, and S. M. Yoon, "Characterization of negative bias-illumination-stress stability for transparent top-gate In-Ga-Zn-O thin-film transistors with variations in the incorporated oxygen content," J. Appl. Phys. 118(23), 1–7 (2015).
[75] X. Huang, D. Zhou, W. Xu, and Y. Wang, "Enhanced temperature and light stability of amorphous indium-gallium-zinc oxide thin film transistors by interface nitrogen doping," J. Vac. Sci. Technol. B 36(4), 040601 (2018).
[76] K. H. Ji, J. I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim et al., "Effect of high-pressure oxygen annealing on negative bias illumination stressinduced instability of InGaZnO thin film transistors," Appl. Phys. Lett. 98, 103509 (2011).
[77] H. Schroeder, "Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!," J. Appl. Phys. 117(21), 215103 (2015).
[78] D. B. Ruan, P. T. Liu, Y. H. Chen, Y. C. Chiu, T. C. Chien, M. C. Yu et al., “Photoresponsivity Enhancement and Extension of the Detection Spectrum for Amorphous Oxide Semiconductor Based Sensors,” Adv. Electron. Mater. 5(3), 1800824 (2019).
[79] H. Yu, X. Liu, L. Yan, T. Zou, H. Yang, C. Liu et al., “Enhanced UV–visible detection of InGaZnO phototransistors via CsPbBr3 quantum dots,” Semicond. Sci. Technol. 34, 25013 (2019).
[80] J. Yu, K. Javaid, L. Liang, W. Wu, Y. Liang, A. Song et al., “High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p−n Heterojunction,” ACS Appl. Mater. Interfaces 10, 8102–8109 (2018).
[81] J. H. Kim, U. K. Kim, Y. J. Chung, and C. S. Hwang, “Correlation of the change in transfer characteristics with the interfacial trap densities of amorphous In–Ga–Zn–O thin film transistors under light illumination,” Appl. Phys. Lett. 98, 232102 (2011).
[82] E. O. Filatova and A. S. Konashuk, “Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries,” J. Phys. Chem. C 119(35), 20755–20761 (2015).
[83] D. Solís-Cortés, E. Navarrete-Astorga, J. L. Costa-Krämer, J. Salguero-Fernandez, R. Schrebler, D. Leinen et al., “Ga-doped IZO films obtained by magnetron sputtering as transparent conductors for visible and solar applications,” Ceram. Int. 45(5), 5577–5587 (2019).
[84] S. Z. Karazhanov, P. Ravindran, P. Vajeeston, A. Ulyashin, T. G. Finstad, H. Fjellvåg et al., “Phase stability, electronic structure, and optical properties of indium oxide polytypes,” Phys. Rev. B 76(7), 075129 (2007).
[85] K. A. Kim, M. J. Park, W. H. Lee, and S. M. Yoona, "Characterization of negative biasillumination-stress stability for transparent top-gate In-Ga-Zn-O thin-film transistors with variations in the incorporated oxygen content," J. Appl. Phys. 118, 234504 (2015).
[86] S. Jeon, S. E. Ahn, I. Song, C. J. Kim, U. I. Chung, E. Lee et al., “Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays,” Nature Mater. 11, 301–305 (2012).
[87] S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim, “Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor,” Appl. Phys. Lett. 98(12), 122105 (2011).
[88] M. G. Yun, S. H. Kim, C. H. Ahn, S. W. Cho, and H. K. Cho, “Effects of channel thickness on electrical properties and stability of zinc tin oxide thin-film transistors,” J. Phys. D 46(47), 475106 (2013).
[89] M. Y. Su, The use of a Patterned NiO Capping Layer to Improve photoresponsivity of Ultraviolet Photodetectors Based on IGZO Field Effect Diodes, Institute of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung University, 2020.
[90] C. J. Chiu, W. Y. Weng, S. J. Chang, S. P. Chang, and T. H. Chang, “A Deep UV Sensitive Ta_2 O_5/a-IGZO TFT,” IEEE Sens. J. 11(11), 2902–2905 (2011).
[91] J. Yang, H. Kwak, Y. Lee, Y. S. Kang, M. H. Cho, J. H. Cho et al., “MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity,” ACS Appl. Mater. Interfaces 8, 8576−8582 (2016).
[92] W.-L. Huang, M.-H. Hsu, S.-P. Chang, S.-J. Chang, and Y.-Z. Chiou, "Indium Gallium Oxide Thin Film Transistor for Two-Stage UV Sensor Application, " ECS J. Solid State Sci. Technol. 8(7), 3140–3143 (2019).
[93] W. L. Huang, C.-C. Yang, S.-P. Chang, and S.-J. Chang, "Photoresponses of Zinc Tin Oxide Thin -Film Transistor, " J. Nanosci. Nanotechnol. 20(3), 1704–1708 (2020).