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研究生：	張肇明 Chang, Chao-Ming
論文名稱：	氣壓式紫外光奈米壓印微影技術暨奈米高深寬比矽結構製作之研究 UV nanoimprint lithography with a compressed air press and silicon nano structure fabrication with high aspect ratios
指導教授：	林俊宏 Lin, Chun-Hung
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering
論文出版年：	2011
畢業學年度：	99
語文別：	中文
論文頁數：	110
中文關鍵詞：	紫外光奈米壓印微影技術、軟微影技術、半導體製程技術、電漿蝕刻技術、光學偏振片
外文關鍵詞：	UV nanoimprint lithography, soft lithography, semiconductor manufacturing technology, plasma etching technology, optical polarizer
相關次數：	點閱：145 下載：1
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奈米壓印微影技術具有次世代極發展潛力的一項技術，本論文為研究紫外光
奈米壓印微影技術，在壓印出圖形後進行電漿乾式蝕刻的製程。我們架設紫外光
奈米壓印系統並改良光源架設，使得曝光時間能夠減少；使用複合式軟微影技術
並測試適合壓印的條件，進一步比較紫外光阻劑中添加附著性提升的配方；我們
以壓印定義出 1 微米的 1-D 週期結構當遮罩，然後成功蝕刻出 1 : 6 的深寬比結
構。另一方面，本論文利用干涉式微影技術定義 500 奈米以下的小線寬結構，並
測定出適合小線寬的高深寬比結構優化參數，討論反應式離子蝕刻系統與感應耦
合式蝕刻系統在蝕刻製程上的差別。最後，我們製作出光學偏振元件，以簡易的
模具複製方式和蒸鍍不同厚度的鋁金屬製作光學偏振片，並討論 s-PDMS、
h-PDMS 和 NOA72 三種材料、不同蒸鍍金屬厚度對於偏振態的影響。

Nanoimprint lithography (NIL) is a potential technology among the next generation lithographies. In this thesis, UV-NIL technology was investigated owing to its low temperature, high resolution, low cost, and easy process. We set up UV-NIL system with an improved output intensity of the UV source which can reduce the exposure time. A hybrid stamp was proposed to improve the imprinting uniformity.
Three compositions of UV-NIL resists were compared. With an imprinted resist as the soft mask, an one-dimensional (1D) grating structure with a pitch of 1μm and an aspect ratio of 6 was successfully fabricated on the silicon substrate. One the other hand, we investigate the optimal fabricating parameters of the inductively coupled plasma (ICP) etching for the pattern pitch smaller than 500 nm. The patterns were defined with the interferometric lithography in the SU-8 resists. The highest aspect ratio we obtained was 10.9 on the silicon substrate. Furthermore, the high aspect ratio
silicon structure was used as the mold to fabricate the wire-grid polarizer.

 
目錄 
Abstract ................................................ I 
摘要.................................................... II 
致謝................................................... III 
目錄..................................................... V 
表目錄......................................... VIII 
圖目錄.................................................. IX 
第一章 
緒論..................................................... 1 
1 前言................................................. 1 
2 論文架構................................... 2 
第二章 建構紫外光奈米壓印微影技術及其製程發展............... 3 
1 文獻回顧.............................................. 3 
1.1  微影技術發展........................ 3 
1.2  紫外光奈米壓印微影技術............................. 4 
1.2.1 模具與光固化阻劑................................ 5 
1.2.2 軟微影...................................... 7 
2 研究動機..................................... 8 
3 研究方法............................................. 8 
3.1  矽模仁製作....................................... 8 
3.2  紫外光奈米壓印系統建立............................ 10 
3.2.1  壓印系統...................................... 10 
3.2.2  紫外光源建構.................................... 11 
3.2.3  PET 密封膜 ................................ 14 
3.2.4  複合 h/s-PDMS/glass stamp 製作 ................. 15 
3.3  材料製備..................................... 18 
3.3.1  脫模劑材料................................ 18 
3.3.2  紫外光固化阻劑................................. 19 
3.3.3  NOA 系列的紫外光固化膠 ........................ 20 
4 實驗結果與討論............................... 20 
4.1  可撓曲光學板之壓印研究........................... 21 
4.2  紫外光固化膠之多層堆疊............................ 22 
4.3  壓印製程測定................................ 24 
4.3.1 紫外光阻劑塗佈測定........................... 24 
4.3.2 提升光固化阻劑附著矽基板的媒介............. 28 
4.4  壓印技術定義蝕刻遮罩暨蝕刻結果..................... 31 
4.4.1 反應式離子系統蝕刻結果......................... 31 
4.4.2 反應式離子系統蝕刻結果討論.................. 34  
4.4.3 感應耦合式系統蝕刻結果....................... 36 
4.4.3.1 感應耦合式系統內建參數對於三種 soft mask 蝕刻結
果............................................  36 
4.4.3.2 感應耦合式系統適用小線寬優化參數的蝕刻結果.. 40 
4.4.4 感應耦合式系統蝕刻結果討論.................... 43 
4.4.4.1 感應耦合式系統內建參數對於三種 soft mask 蝕刻
結果討論  ....................................43 
4.4.4.2 感應耦合式系統在高溫環境的蝕刻結果討論.......... 44 
4.4.4.3 感應耦合式系統適用小線寬優化參數的蝕刻結果討論  45 
5 結論............................................ 46 
第三章 利用干涉式微影技術建立電漿乾式蝕刻製程............... 47 
1 文獻回顧........................................ 47 
1.1 乾式蝕刻的物理原理............................ 47 
1.2 電漿蝕刻的蝕刻氣體................................ 48 
1.3 蝕刻輪廓.......................................49
1.4 蝕刻輪廓與平均自由路徑............................ 49 
1.5 蝕刻輪廓與高密度電漿................................ 50 
1.6 高深寬比的兩種方法................................. 50 
1.7 Cryogenic Etch 的異向蝕刻機制 ..................... 51 
1.8 Oxford PlasmaLab 100 系統 ...................... 51 
1.9 側壁鈍化層與參數調變................................ 54 
1.10 側壁頓化層的機制研究............................... 57 
2 研究動機..................................... 59 
3 研究方法........................................ 61 
4 實驗結果與討論.............................. 61 
4.1 AZ5214 正光阻之大尺寸測試 ......................... 61 
4.2 感應耦合式系統蝕刻實驗結果..................... 65 
4.2.1 感應耦合式蝕刻系統內建參數調變.................... 65 
4.2.2 側蝕輪廓參數最佳化.......................... 68 
4.2.3 理想輪廓的氣體流量參數調變.................... 72 
4.3 感應耦合式系統蝕刻實驗結果討論.................... 89 
4.3.1 參數調變的優化制定................................ 89 
4.3.2 理想輪廓的參數調變討論...................... 90 
5 結論................................................ 93 
第四章 
利用電漿乾式蝕刻技術及軟微影技術製作光學偏振片............... 94 
1 文獻回顧............................................. 94 
1.1 光柵方程式.......................... 94 
1.2 偏振片結構與光學特性的影響........................... 95 
2 研究動機........................................ 96 
3 研究方法............................................. 96 
3.1 奈米級結構製作............................... 96 
3.2 偏振片材料................................. 96 
3.3 偏振片製作....................................... 97 
4 實驗結果與討論...................................... 99 
5 結論...................................... 103 
第五章 
結論......................................... 104 
1 實驗總節....................................... 104 
2 未來展望............................................ 105 
Reference ............................................. 107 
                                    

107
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校內：2014-02-18公開
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