由於半導體工業的迅速發展，電漿製程也愈受關切，故本文中針對一濺鍍電漿製成反應器內分析注入之中性氣體的分佈狀況，以期能對電漿製程有所改進；因為電漿濺鍍腔體之腔內壓力甚低，約在3mtorr左右，流體過渡稀薄而無法以一般連續流的Navier－Stokes方程式來分析；故本文採用直接蒙地卡羅法來求解腔內之密度與溫度之分佈。

　　文中所模擬之反應腔體腔壓為0.4Pa，直徑為600mm高為480mm，注入之氣體為氬氣注入率分別為5、10、15sccm，而托盤溫度則分別為300K、500K、700K的情況下，去探討反應器內密度與溫度分佈的狀況。

　　模擬結果顯示，在固定入口流率下，當托盤溫度上升時，將導致腔內核心關鍵區域中的標準差密度不變與標準差溫度上升；而在固定托盤溫度下，當流率上升時，則核心區中的標準差密度上升與標準差溫度不變；因此欲得到更均勻流場，就必須將托盤溫度下降到邊界溫度附近以及限制入口流率使其不致過大。托盤溫度與入口流率雖對流場之均勻度都有影響，但是由模擬結果比較下來，下降入口流率之影響要比下降托盤溫度來得更明顯，所以入口流率實是影響著腔體內區域中均勻度的一個關鍵性變數。

　The plasma fabrication process is attracting more attentions as the semiconductor industry is still growing up. In this study , the dynamic behavior of neutral gases within a plasma sputtering chamber (under 3 mtorr pressure) is simulated by the direct simulation Monte Carlo (DSMC) method.

　From the simulated results such as the density and temperature distributions within the chamber can hopefully provide the useful information to improve the chamber design.

　Argon was considered as the neutral gas to injected into the sputtering chamber under 0.4Pa pressure with the diameter of 600mm and the height of 480mm. Different injection rates varied as 5,10 and 15 sccm under different temperature of the target holder (which are 300K,500Kand 700K) are all simulated and analyzed.

　Results indicate that the stardand deviation density (STD_D) inside the block 1 zone (key space inside the chamber) is invariable and the stardand deviation temperature is increasing when the holder temperature is decreasing while the injection is fixed.
And STD_D is increasing and STD_T is invariable when the injection is increasing while the holder temperature is fixed.
　
　In order to get more uniform flux , we compare the influence of the holder temperature and the injection rate. Finally we get the conclusion which is the injection rate have more powerful influence, so it is a key parmameter.

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