摘要

　　化學鍍是現今一種很常採用的金屬沈積方式，而其中又以化學鍍鎳磷合金最為重要──因為該鍍層擁有優秀的抗腐蝕性及硬度，因此鎳磷合金在工業上被廣泛地使用。而化學鍍鍍液中需要添加穩定劑，一般的化學鍍鎳磷鍍液採用的穩定劑為鉛離子，而本實驗採用銅離子作為穩定劑，因為有著鉛離子無法取代的效果：臨界濃度高、加快析鍍速率、改善鍍層表面形態、形成鎳銅磷合金而比鎳磷合金有著更優異的性能、保護環境等。
　　而在不同的銅離子濃度下，我們試著對穩定劑如何影響其析鍍行為作一個探討──包括為何加入銅離子後形成的鎳磷合金各方面都比原始情況較佳，並試著以電子穿隧理論來解釋其行為，同時以該理論來預測穩定劑的臨界濃度。

Abstract

　　Effect of copper ion (Cu2+) as a stabilizer in plating bath on characteristics of the resulted nickel-phosphorus (Ni-P) alloys was investigated in comparison with that by using the conventional Pb2+ stabilizer. XRD, SEM equipped with EDX were employed to characterize the as-deposited alloy. In general, the deposition rate and morphology was significantly improved with addition of Cu2+. However, the resulted alloy was shown as a mixture of amorphous Ni-P alloy and crystalline copper, in contrast to the amorphous Ni-Cu-P alloys claimed by Armyanov et al. (Electrochem. and Solid-State Lett., 2(7), 323 (1999)). Indeed, the increased deposition rate with Cu2+ present mainly arises from the initial preferential deposition of colloidal copper grains on substrate, which greatly enhanced the exposed surface area for the latter deposition of Ni-P alloy. Moreover, the electron-tunneling theory is successfully introduced to explain the deposition process.

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