本論文以有機金屬化學汽相沉積系統磊晶成長氮化物材料，並探討氮化鎵系列發光二極體在亮度、可靠度及抗靜電力改善之研究，為了增加亮度輸出，我們以300 oC RTA對Ni/ITO進行熱處理，在亮度上可得到提升，同時也以透明材料氧化銦錫(Indium-Tin-Oxide)去取代Ni/Au或Ni/ITO，然而氧化銦錫(ITO)在p-GaN上不容易形成歐姆性金屬接觸，因此透過磊晶成長n型高摻雜短週期超晶格結構(short period superlattice)在p-GaN表層，當n+-InGaN/GaN與p-GaN在適當反向偏壓下，由於穿透機率的提高可使金半接面獲得良好的歐姆性接觸。藍光與綠光發光二極體其20 mA的輸出功率與功率效率(wall-plug efficiency)分別可以達到 8.4 mW / 13.9 %與4.98 mW / 8.2 %，另一方面，光取出效率對於發光二極體的輸出強度也是相當重要，同樣的概念也可應用在晶粒的側壁上，透過側壁的波浪狀粗化可以讓發光二極體的亮度得到10 ％的提升。
　　由於ITO金半接面接觸電阻與面電阻的稍高，使得元件操作過程中較多的熱產生在ITO/n+-SPS介面與表面，因此以ITO作為透明導電層的發光二極體其可靠度表現較差，透過金屬指狀n電極的導入，可以讓元件電流擴散較均勻及降低熱效應，進而改善元件可靠度。另外，加上SiO2披覆薄膜在發光二極體表面也可以改善元件可靠度與漏電特性。
　　我們也成功研製出大尺寸(1 mm×1 mm)高功率氮化物發光二極體並以ITO作為透明p電極，高功率發光二極體加上背反射鋁鏡，其350 mA的功率輸出可達到84.8 mW (wall-plug efficiency = 7.2 %)，而經過室溫500度C 1000小時壽命測試後，亮度上只有10 %的衰減，另外，由於覆晶技術可使光子從基板直接透射且無金屬電極與金屬線遮光問題，因此能得到更高亮度輸出，且因為散熱路徑的縮短，使得元件可靠度也得到改善。另一方面，抗靜電能力對於LED戶外應用上是個很大考驗，在研究中，我們利用本身抗靜電保護結構使得發光二極體HBM抗靜電能力，從原本的數百伏特不到提升至超過1500伏特左右。

　In this dissertation, the nitride based epitaxy material was grown by metalorganic chemical vapor deposition (MOCVD). Improvements of brightness, reliability and electrostatic discharge (ESD) ability on InGaN/GaN LED devices have been investigated. In order to increase LED output intensity, 300oC-RTA annealing was applied on Ni/ITO p-contact. It was found that the EL-intensity could be improved. Moreover, we could use transparent indium-tin-oxide (ITO) to replace semi-transparent Ni/Au or NiITO. However, good ohmic contact is difficult to achieve for ITO deposited on p-GaN. By growing such SPS structure on top of the p-GaN cap layer, one could achieve a good “ohmic” contact through tunneling when the n+(InGaN/GaN)-p(GaN) junction was properly reverse biased. The 20 mA output power and wall-plug efficiency (WPE) of LEDs with ITO p-contact was about 8.4mW and 13.9 %, for blue LEDs and 4.98 mW and 8.2 % for green LEDs. In the other way, light extraction efficiency is also significant to the LED output intensity. Similar concept should also be applied to chip side walls. A 10 % output power enhancement from LEDs by the introduction of the wavelike textured side walls could be achieved.
　The slightly poor reliability of the LED with ITO could be attributed to the slightly larger specific contact resistance and sheet resistance of the ITO on n+-SPS. As a result, more heat would be generated at the ITO/n+-SPS interface and thus a shorter lifetime for the devices.
Therefore, the better reliability of LEDs could be achieved due to the better current spreading and thus less heating effect by the use of metal finger n-electrodes. Besides, by the deposition of a SiO2 layer on top of the ITO LEDs, a longer lifetime and a smaller leakage current (IR) could be achieved.
　Large size (i.e. 1 mm x 1 mm) nitride-based power LEDs with ITO transparent p-contacts was also fabricated. The 350 mA output power was 84.8 mW (wall-plug efficiency = 7.2 %) for the ITO power chip with Al reflector. After more than 1000 hours RT-500mA lifetime testing, the luminous intensity only was decreased by 10 %. By using flip-chip technology, we should be able to achieve a larger output power since no bonding pads or wires exist on top of the devices so that photons could be emitted freely from the substrates. The flip-chip LED was also more reliable due to the shorter thermal path. It would be a challenge to take account of the ESD ability for the outdoor application of LEDs. Moreover, in my investigation, electrostatic discharge capability of the LED with ESD protection could be greatly improved from several hundred to over 1500 V in human body model (HBM).

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Chapter 4
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Chapter 5
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