電鍍具有低成本、製程簡單、製造大面積材料的潛力，且可撓式基板的應用對於產業界之發展上有相當大的助益。本論文利用共電鍍方式取代傳統的物理氣相沉積法(濺鍍)，來製備Cu-In先驅層於具有氧化鋁阻障層與MoAl背電極的可撓式不鏽鋼基板上，再經由硒化的方式，形成CIAS吸收層，並製作CIAS薄膜太陽能電池。
背電極成份與結構、電鍍液中Cu-In相對濃度、錯合劑，硒化溫度與時間等實驗參數皆會影響最終CIAS吸收層的薄膜品質，本論文透過X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、薄膜測厚儀(Alpha step)及能量分散光譜儀(EDS)，對製備的CIAS薄膜進行晶體結構、表面形貌、薄膜厚度和組成成分進行分析。
最後成功地做出可撓式CIAS薄膜太陽能電池，電流-電壓特性曲線顯示，此元件具有顯著之二極體特性，目前最佳元件之數據為：Voc=100m V、Jsc = 25.48 mA/cm2、F.F. = 37 %、η = 0.94 %。

Electro-deposition (ED) is a simple and low cost process and has the potential for large scale production. Using flexible substrate for solar cells has considerable benefits to the development of photovoltaic industry. In this dissertation, instead of traditional physical vapor deposition I used ED process to co-plating Cu-In precursors on a flexible stainless steel substrate, which has AlOx barrier layer and MoAl back electrode. After selenization process, the CIAS absorber layer was formed and CIAS solar cells were successfully fabricated.
Parameters and variables, such as the composition and structure of the back electrode, relative Cu-In concentrations in the plating solution, complexing agent, temperature and duration of the selenization process, will have significant influence on the CIAS absorber layer. The study used X-ray diffractometer for phase identification, SEM to observe morphology of the thin films, α-step to measure the thickness of the films, and X-ray energy dispersive spectroscopy to analyze the stoichiometry of the absorber layer.
CIAS thin film solar cells have been successfully fabricated on a stainless steel flexible substrate. From the current-voltage characteristic plots, this device has remarkable diode characteristic. Currently, the best solar cell has following photovoltaic parameters: Voc=100m V, Jsc = 25.48 mA/cm2, F.F. = 37 % and η = 0.94 % .

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