本實驗利用脈衝雷射鍍膜儀 (Pulse Laser Deposition System) 在藍寶石基板(Al2O3)上成長Ir-Mn多層膜，並透過調整成長溫度、退火條件找尋其適當之成長參數，並調整其中Ir、Mn層厚度使其達到適當原子成分比例，最終使其成為L10、L12相之IrMn序化合金薄膜，並透過原子力顯微鏡(Atomic Force Microscope , AFM)、X光光電子能譜儀(X-ray Photoemission Spectroscopy , XPS)、 X光繞射儀(X-ray Diffraction , XRD)檢測薄膜品質、成分及其晶體結構，實驗中，IrMn合金薄膜以[Ir /Mn] 多層膜之形式成長，並透過高溫臨場退火使原子間重新排列已達成序化，論文中也將會探討一些關於成長序化IrMn、IrMn3合金薄膜之中，成長溫度、退火溫度對其序化度的研究。

In this thesis, we grew IrMn on a miscut-A plane sapphire substrate by Pulse Laser Deposition system (PLD). We adjusted the growth temperature, thickness of Ir and Mn and different annealing condition. We found a appropriate condition for growth ordered-IrMn alloy (both L10 and L12 phase) in multiple payers. The thickness of Ir, Mn layers were determined by adjusting the count of the laser pulse. For elemental quality of the thin film, we analysis through X-ray photoemission. We also found the correlation between ordering parameter S ,growth temperature and annealing condition. Then we observe the morphology of the ordered- IrMn film from the Atomic force microscope (AFM)

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