本論文中，我們磊晶出氮化鋁鎵/氮化鎵單異質接面場效電晶體與氮化鋁鎵/氮化銦鎵/氮化鎵雙異質接面場效電晶體，同時在氮化鋁鎵/氮化銦鎵/氮化鎵雙異質接面場效電晶體方面，將氮化銦鎵層磊晶三種不同的厚度，分別為100Å、300Å 以及500Å 的厚度。在直流分析方面，500Å 氮化銦鎵層厚度之元件，擁有最高汲極電流為518mA/mm，以及最高轉導為167mS/mm。在高頻分析方面，我們以8510 網路分析儀分析，也使用了外部寄生量的去除之技巧，也得到了更正確的最高截止頻率以及最大共振頻率。得到500Å 氮化銦鎵層厚度之元件，擁有最高的截止頻率為3.81GHz，以及最高的最大共振頻率為4.95GHz。

　　同時，我們也從不連續導電帶圖、自發極化現象以及壓電極化現象等的理論基礎，來加以探討氮化鋁鎵/氮化鎵單異質接面場效電晶體與氮化鋁鎵/氮化銦鎵/氮化鎵雙異質接面場效電晶體在二維電子海形成機制之不同。

　　In this thesis, we epitaxy AlGaN/GaN single heterostructure fieldeffect transistor (SHFET) and AlGaN/InGaN/GaN double heterostructure field effect transistor (DHFET). In AlGaN/InGaN/GaN DHFET, we epitaxy three structures with different InGaN thickness which are 100Å, 300Å,and 500Å. The AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness has maximum drain current (518mA/mm) and
maximum transconductance (167mS/mm) for DC performance. At RF analysis section, we use Agilent 8510C network analyzer and de-embedding technique to get highest cut-off frequency fT (3.81GHz)
and highest maximum oscillation frequency fMAX (4.95GHz) of the AlGaN/InGaN/GaN DHFET device with 500Å InGaN layer thickness.
　　In addition, we investigate the theories of conduction band discontinuity, spontaneous polarization and piezoelectric polarization to discuss the mechanism of 2DEG formation in AlGaN/GaN SHFET and AlGaN/InGaN/GaN DHFET.

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