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研究生：	顏偉昱 Yen, Wei-yu
論文名稱：	利用有機金屬化學氣相沉積成長無極化A 面氮化鎵於R 面藍寶石基板 Nonpolar A-plane GaN on R-plane sapphire by metalorganic chemical vapor deposition
指導教授：	賴韋志 Lai, Wei-chih
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering
論文出版年：	2007
畢業學年度：	95
語文別：	英文
論文頁數：	105
中文關鍵詞：	R面藍寶石基板、A面氮化鎵、無極化氮化鎵、原子力顯微鏡
外文關鍵詞：	non-polar GaN, A-plane GaN, R-plane sapphire, AFM
相關次數：	點閱：73 下載：1
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本實驗利用有機金屬化學氣相沉積成長無極化A面氮化鎵於R面藍寶石基板上，且利用高溫成長的氮化鋁當作緩衝層，再於高溫氮化鋁的緩衝層之上成長大約三微米的本質氮化鎵，稱為無摻雜氮化鎵層。由緩衝層和無摻雜氮化鎵層組成塊材，而其結晶品質和表面平整度都直接的影響到接下來要成長於塊材之上的負型化合物半導體氮化鎵、InGaN/GaN多重量子井、以及正型化合物半導體氮化鎵的結晶品質和平整度；因此本文首先討論改變緩衝層和無摻雜氮化鎵層的成長條件，再利用原子力顯微鏡、X射線繞射儀，和光學顯微鏡去找出能夠得到高品質晶體和平整的表面所需要的條件，同時也研究各種表面狀態的型式以及成因，比如說原子流紋，缺陷…等。而本文的第二部分主要是討論氮化鎵摻雜鎂也就是正型化合物半導體的各種特性，主要是利用常溫霍爾量測，變溫霍爾量測，常溫光致螢光偵測器，去量測在不同晶面其氫原子游離能，電洞活化能，以及能帶寬度，期望能對A面氮化鎵的電性有所了解。

This experiment aims at the research of using MOCVD grow non-polar A plane Gallium-Nitride(GaN) on R-plane sapphire(Al2O3) substrate .We use high growth temperature Aluminum-Nitride(HT-AlN) as buffer layer , and grow un-doping GaN layer about 3um base on HT-AlN buffer layer . The un-doping GaN layer is always called u-GaN. The Bulk, including HT-AlN buffer and u-GaN, have significant affection in the crystal quality and morphology of n type GaN, InGaN/GaN MQW and p type GaN, because of crystal quality and morphology of Bulk. First, in my experiment , owning to above reasons, we change the growth condition of HT-AlN buffer layer and u-GaN , and measure its morphology and crystal quality by AFM , OM and XRD to pursue the best growth condition in order to get the best crystal quality and flat surface . In the same time, we can also analyze the different shape on crystal surface, and discover the reason forming the shapes, such as atomic flow and pits ….est. In the second part of my experiment, we focus our attention in the feature of GaN doping Mg as the p type semiconductor. We use room temperature Hall measurement, temperature dependent Hall measurement, and photo luminescence to measure the ionization energy of H atomic, activation energy of hole, and band gap in hopes of understanding the electrical feature of GaN.

Contents
Abstract(in Chinese).......................... i
Abstract(in English).......................... ii
Acknowledge................................... iii
Content....................................... iv
Table caption ................................ vii
Figure caption ............................... ix
CHAPTER 1 Introduction of Gallium-Nitride
1.1 Introduction of GaN Material------------------------001.
1.2 Polarization Effect in GaN--------------------------003.
1.3 (0001) plane GaN on (0001) plane sapphire and  plane
    GaN on  plane sapphire------------------------------007.


CHAPTER 2 Introduction of Instrument  
2.1 Introduction of Metalorganic Vapor Epitaxy System---013.
     2.1.1 Introduction MOVPE---------------------------013.
     2.1.2 Vertical type MOVPE Reactor------------------016.
     2.1.3 In Situ Monitoring of Epitaxy Growth---------018.
2.2 Introduction of Atomic Force Microscopy-------------025.
     2.2.1 Atomic force microscopy (AFM) system---------025.
     2.2.2 AFM principle--------------------------------025.
     2.2.3 AFM modes------------------------------------027.
     2.2.4 Experimental apparatus and system structure--029.
     2.2.5 AFM tip--------------------------------------032.
2.3 Principle Of X-ray Diffraction----------------------034.

CHAPTER 3 Study Of A-plane Gallium-Nitride
3.0 Introduction Of Surface Morphology------------------042.
3.1 Buffer Layer Growth Condition To Morphology---------044.
     3.1.1 Buffer Thickness To Bulk Surface morphology--044.
     3.1.2 Buffer Grow Temperature To Surface Morphology051.
     3.1.3 Buffer Grow III/V Ratio To Surface Morphology056.
3.2 Un-doping Layer Growth Condition To Morphology------062.
     3.2.1 First Un-dope GaN Thickness To Surface 
           Morphology-----------------------------------062.
     3.2.2 U1 Grow III/V Ratio To Surface Morphology----067.
     3.2.3 U2 Grow III/V Ratio To Surface Morphology----074.
     3.2.4 U1 Grow Pressure To Surface Morphology-------080.
3.3 P Type Gallium-Nitride------------------------------082.
CHAPTER 4 Conclusions 
4.1 The shape of pits and how the stripe be formed------092.
4.2 Conclusion of Surface Morphology--------------------098.

CHAPTER 5 Feature Work----------------------------------102.

Reference-----------------------------------------------104.
                                    

Reference:
[1] Fabio Bernardini and Vincenzo Fiorentini, PHYSICAL REVIEW B VOLUME 57, NUMBER 16
[2] Aluminum nitride films on different orientations of sapphire and siliconK. Dovidenko, S. Oktyabrsky, J. Narayan and M. Razeghi (1995)
[3] M. Kazumura, I. Ohta, and I. Teramoto, “ Feasibility of the LPE growth of AlxGayIn1-x-P on GaAs substrate”, Jpn.J. Appl. Phys., Vol. 22, 654(1983).
[4] H. M. Manasevit, “ Single-crystal gallium arsenide on insulating substrate”, Appl. Phys. Lett., Vol. 12, 156(1968).
[5] H. M. Manasevit, F. Erdmann and W. Simpson, J. Electrochem. Soc., Vol. 118,
1864(1971).
[6] S. P. DenBaar, B. Y. Maa, P. D. Dapkus and H. C. Lee, “ Homogeneous and heterogeneous thermal decomposition rates of trimethylgallium and arsine and their relevance to the growth of GaAs by MOCVD”, J. Cryst. Growth. Vol. 77, 188(1986).
[7] T. Makimoto, Y. Yamauchi, N. Kobayashi, and Y. Horikoshi, “ In situ optical monitoring of the GaAs growth process in MOCVD ”, Jpn. J. Appl. Phys. Vol.29, L207 (1990).
[8] S. L. Wright, T. N. Jackson, and R. F. Marks, “ Apparent temperature oscillation during molecular beam epitaxy: A useful interferometric effect”, J. Vac. Sci. & Technol. Vol.B8, 288(1990).
[9] A. J. Spring Thorpe and A. Majeed, “ Epitaxial growth rate measurements during molecular beam epitaxy “, J. Vac. Sci. & Technol. Vol.B8, 266(1990).
[10] T. Okamoto and A. Yoshikawa, “ Effects of substrate materials and their roperties on photoassisted metalorganic vapor phase epitaxy of ZnSe”, Jpn. J.Appl. Phys. Vol.30, L156(1991).
[11] S. Nakamura, “ In situ monitoring of GaN growth using interference effects”, Jpn.J. Appl. Phys. Vol.30, 1620(1991).
[12] I. P. Herman, “Optical Diagnostics for Thin Film Processing”, Academic, SanDiego(1996).
[13] AFM principle and SOP VEECO DI 3100 SPM AFM, VEECO DI
[14] Fifty Years of X-Ray Diffraction, P. P. Ewald Chap 6
[15] http://www.scintag.com Scintag Inc.
Reference book :
1. Semiconductor Devices Physics And Technology, 2/E, S.M.Sze
2. Semiconductor Physics and Devices, 3/E, Donald A. Neamen
3. Semiconductor Material And Device Characterization, 2/E, DIETER K. SCHRODER
Fifty Years of X-Ray Diffraction, P. P. Ewald

校內：2012-08-14公開
校外：2012-08-14公開

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