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研究生：	林筱琪 Lin, Shiau-Chi
論文名稱：	氮化物二極體中電流散佈層之研究與設計 The investigation and design of current spreading in nitride-based LEDs
指導教授：	蘇炎坤 Su, Yan-Kuin
學位類別：	碩士 Master
系所名稱：	理學院 - 光電科學與工程研究所 Institute of Electro-Optical Science and Engineering
論文出版年：	2009
畢業學年度：	97
語文別：	英文
論文頁數：	90
中文關鍵詞：	橫向電流阻障、氮化鋁鎵-氮化鎵超晶格、發光二極體、電流散佈
外文關鍵詞：	current spreading, lateral current blocking, light-emitting diodes, AlGaN/GaN superlattice
相關次數：	點閱：121 下載：2
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近年來，由於氮化鎵系列發光二極體商品的蓬勃發展以及全球照明市場的需求，發光二極體越來越受到重視。在本論文中，使用有機金屬氣相磊晶技術展現氮化鎵系列材料特性以及改變發光二極體結構來達到元件特性的改善。
首先使用了Delta的方式參雜鎂在氮化鎵材料中，形成P型的氮化鎵材料並討論其電特性及表面形態。Delta參雜的P型氮化鎵展現了良好的表面平坦度以及電洞濃度。另外，也成長了不同結構的P型氮化鋁鎵-氮化鎵超晶格結構，由電特性、表面型態來討論其結果。而在發光二極體元件的研究中，吾人在發光二極體的主動層與P型氮化鎵之間成長P型氮化鋁鎵-氮化鎵超晶格結構以及使用橫向電流阻障的結構來改善電流在二極體中散佈的情形，並討論之。由結果得知，P型氮化鋁鎵-氮化鎵超晶格以及橫向電流阻障結構可以達到改善電流散佈的作用；而藉由在N型與P型電極間蝕刻出的橫向電流阻障結構，其發光二極體特性顯示出在20mA時光強度有達到9.2%的改善，且操作電壓不受影響。

Recently, due to the rising progress for the products of nitrite-based LEDs and the requirement of global market of the illumination, light-emitting diodes become more and more important. In this thesis, the improved properties of GaN-based materials by metalorganic vapor phase epitaxy (MOVPE) technique and devices improved by changing the structure are demonstrated.
First, we demonstrate p-GaN by delta dope technique and different structure of p-AlGaN/GaN superlattice, and then we discuss the electrical property and the surface morphology. The delta-doping p-GaN perform good surface quality and the hole concentration. In this thesis, we investigate two methods to spread the current. First is the p-AlGaN/GaN SLs between p-GaN and the active region, and second is the lateral current blocking holes. Both the p-AlGaN/GaN SLs and the lateral current blocking hole perform the better current spreading. The light intensity of InGaN/GaN light-emitting diodes (LEDs) was improved 9.2% at 20mA by introducing current blocking hole between n-bonding pad and p-bonding pad while the forward voltage is almost the same.

Contents
Abstract (in Chinese) …………………………………………….……..………..І
Abstract (in English) .…………………………………………………..………Ⅱ
Acknowledgements……………………………………………………………..Ⅳ
Contents…………………………………………………………………………Ⅵ
Table Captions ...…………………………………………………….Ⅷ
Figure Captions ……………………………………………….......Ⅸ
CHAPTER 1 Introduction…………………………………………..1
1.1 Background …………………………………….....……...….…1
1.2 The property of nitride-based materials……………………..….2
CHAPTER 2 The principle of fabrication and measurement systems………………………………………………..7
2.1 Metalorganic Chemical Vapor Deposition Systems………........7
2.2 X-ray…………………………………………………………..12
2.3 Atomic Force Microscopes (AFM)…………………………...14
2.4 Photoluminescence system (PL)………………………………15
CHAPTER 3 Growth of p-type GaN on Sapphire Structures by MOVPE……………………………………………...23
3.1 Motivation………......………………………………………...23
3.2 Delta-doping p-type GaN……..……..……………………..…24
3.3 Summary…...……………………………..…………………...26
CHAPTER 4 Growth of p-type AlGaN/GaN superlattice on Sapphire……………………………………………..30
4.1 Motivation……………..……………………………………...30
4.2 p-AlGaN/GaN superlattice……….............…………………...31
4.3 Summary……...……………………………………………….35
CHAPTER 5 The improvement of current spreading in green light emitting diodes……………………………………..44
5.1 Motivation……..……………………………………………...44
5.2 The green LED with p-AlGaN/GaN superlattice grown by MOVPE……………………………………………………….46
5.3 The green LED with dual-stage p-AlGaN/GaN superlattice grown by MOVPE…………………………………………….48
5.4 Green LED with lateral current blocking holes…………..…..50
5.5 Summary………………………………………………...........51
CHAPTER 6 Conclusions and Future work……………………...65
6.1 Conclusions……………………………………………..……65
6.2 Future work…………………………………………………..66
References…………………………………………………………68










Table Captions
CHAPTER 1
Table 1.2-1 The material properties of nitride-based material…………………..6
CHAPTER 3
Table 3.2-1 the hall measurement and AFM results of sample A1, B1………..27
Table 3.2-2 the results of hall measurement and AFM
(for sample A1, A2, A3)…………………………………………..28
CHAPTER 4
Table 4.2-1 the different growth temperature of AlGaN/GaN SLs…………….37
Table 4.2-2 the constant growth temperature of three AlGaN/GaN SLs 
samples…………………………………………………………….39
Table4.2-3 three different Mg doping structures of p-AlGaN/GaN SLs……….40
Table 4.2-4 the FWHM of three p-AlGaN/GaN SLs (sampleD1, D2, D3)…….41
CHAPTER 5
Table 5.2-1 the beam profile of different pairs SLs…………………………….59
Table 5.4-1 electrical and optical characteristic of green LED with different number of rows……………………………………………………63
Table 5.4-2 beam profile characteristic of green LED with different number of rows………………………………………………………………..64
 
Figure Captions
CHAPTER 1
Fig 1.2-1 The schematic of the crystal structure of wurtzite GaN………………5
Fig 1.2-2 The illustration of two crystals with different lattice constant resulting dislocations……………………………………………………………5
Fig 1.2-3 Energy band gap versus lattice constant of nitride-based materials at room temperature……………………………………………………...6
CHAPTER 2
Fig 2.1-1 a) The diagram and (b) the side view of AIXTRON 200RF MOVCD system………………………………………………………………..16
Fig 2.1-2 The constant temperature tank system……………………………….17
Fig 2.1-3 The picture of gas mixing system of MOVPE……………………….17
Fig 2.1-4 The structure of reactor chamber in the MOVPE system……………18
Fig 2.1-5 The picture of vacuum system of MOVPE…………………………..18
Fig 2.1-6 The picture of scrubber system of MOVPE………………………….19
Fig 2.1-7 The picture of electronic control system of MOVPE………………...19
Fig 2.2-1 The spectrum using Cu as target in the X-ray diffractometer………..20
Fig 2.2-2 Diffraction of a plane wave of successive crystal planes…………….20
Fig 2.3-1 The relationship of force and distance between two atoms…………..21
Fig 2.3-2 The schematic disgram of an AFM system…………………………..21
Fig 2.4-1 The diagram of generation and recombination of electron and hole…22

CHAPTER 3
Fig 3.2-1 The structure of delta-doping p-GaN and the schematic diagram of growth procedure…………………………………………………….27
Fig 3.2-2 The XRD result with different flow rate of Cp2Mg………………….28
Fig 3.2-3 AFM picture of sample A1, A2, A3………………………………….29
Fig 3.2-4 hall measurement result of sample A1, A2, A3 at different annealing temperature………………………………………………………….29
CHAPTER 4
Fig 4.1-1 The diagram of lattice mismatched…………………………………..36
Fig 4.1-2 Diagram of lattice parameter with different band-gap energy……….36
Fig 4.2-1 HRXRD measurement results of two AlGaN/GaN superlattice samples……………………………………………………………….37
Fig 4.2-2 AFM images of two AlGaN/GaN superlattice……………………….38
Fig 4.2-3 HRXRD measurement results of AlGaN/GaN superlattice………….38
Fig 4.2-4 HRXRD measurement results of two AlGaN/GaN superlattice samples……………………………………………………………….39
Fig 4.2-5 HRXRD measurement results of sample C7 : AlGaN/GaN
superlattice…………………………………………………………...40
Fig 4.2-6 (a) HRXRD characteristic of three p-AlGaN/GaN SLs (sampleD1, D2, D3)……………………………………………………………….41
Fig 4.2-6 (b) AFM characteristic of three p-AlGaN/GaN SLs  (sampleD1, D2, D3)……………………………………………………………...42
Fig 4.2-7 Hall measurement of p-AlGaN/GaN SLs (sample D1, D2, D3) at different annealing temperature……………………………………...42
Fig 4.2-8 Calculated valence-band diagram for the Mg-doped AlGaN/GaN superlattice with spontaneous and piezoelectric polarization fields taken into account……………………………………………………43 
CHAPTER 5
Fig 5.1-1 The energy band gap of p-AlGaN/GaN SLs bent with spontaneous and piezoelectric polarization fields……………………………………...53
Fig5.1-2 Concept of lateral current blocking hole structure……………………53
Fig 5.2-1 The green LED structure with p-AlGaN/GaN superlattice…………..54
Fig 5.2-2 The schematic diagram of growth procedure for green LED with p-AlGaN/GaN superlattice…………………………………………..54
Fig 5.2-3(a)(b) The XRD and PL result of green LED with p-AlGaN/GaN superlattice (the growth temperature of superlattice is 1010℃)………………………………………………………..55
Fig 5.2-4 the schematic diagram of growth procedure for green LED with p-AlGaN/GaN superlattice…………………………………….56
Fig 5.2-5(a) The XRD result of green LED with p-AlGaN/GaN superlattice (the growth temperature of superlattice is 985℃)……………………56
Fig 5.2-5(b) The PL result of green LED with p-AlGaN/GaN superlattice (the growth temperature of superlattice is 1010℃)…………………..57
Fig 5.2-6 The I-V characteristic of LED structure with 4 pairs, 6 pairs and 8 pairs superlattice……………………………………………………..57
Fig 5.2-7 the light intensity of LED structure with 4 pairs, 6 pairs and 8 pairs superlattice…………………………………………………………...58
Fig 5.2-8 The reverse-biased green LED with different pairs of superlattice….58
Fig 5.3-1 The LED structure with dual-stage p-AlGaN/GaN SLs……………...59
Fig 5.3-2 The XRD result of LED with dual-stage p-AlGaN/GaN SLs………..60
Fig 5.3-3 The PL result of LED with dual-stage p-AlGaN/GaN SLs…………..60
Fig 5.3-4 The I-V characteristic of LED structure of dual-stage SLs and constant thickness SLs (7nm)………………………………………………….61
Fig 5.3-5 The light intensity of LED structure of dual-stage SLs and constant thickness SLs (7nm)………………………………………………….61
Fig 5.4-1 The diagram of lateral current blocking hole structure………………62
Fig 5.4-2 I-V characteristic of green LED with different numbers of rows…….62
Fig 5.4-3 The light output of green LED with different number of rows………63
CHAPTER 6
Fig 6.2-1 The different arrangement of current blocking in LEDs……………..67
                                    

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