本研究所探討的主題是在低溫環境下利用雷射輔助電漿增強式化學氣相沉積系統進行高品質非晶矽及微晶矽薄膜的沉積，利用矽薄膜反應氣體矽甲烷對波長10.6微米的二氧化碳雷射具有相當高吸收率，在薄膜沉積過程中導入二氧化碳雷射輔助矽薄膜沉積，進而在低溫下製作P型、I型與N型微晶矽薄膜，進一步討論在不同雷射輔助條件下對薄膜緻密度、光電特性以及結晶品質上的差異。在應用方面，因為非晶矽相對於單晶矽有相當高的吸收係數，打破傳統結晶矽的限制，特別適合太陽能元件的開發，但在長時間照光下，薄膜品質會有劣化現象，因此發展高品質微晶矽薄膜太陽能電池變成首要目標，本研究利用雷射輔助矽薄膜形成太陽能電池，在未加入雷射輔助時太陽能電池元件效率為6.04%，雷射輔助太陽能電池元件效率提升至7.01%，最終將未加雷射輔助的非晶矽太陽能電池與雷射輔助太陽能電池串疊,效率可達7.13%，顯示雷射輔助有助於幫助提升太陽能電池轉換效率。

The topic of this research is silicon film deposited at low temperature based on Laser-assisted Plasma-Enhanced Chemical Vapor Deposition system (LAPECVD) to become amorphous and microcrystal silicon film. Because of specially high absorption of silane to CO2 laser, laser beam is guided into chamber during deposition of silicon film to form p-type, intrinsic and n-type silicon film at low temperature, and further investigate the porosity、optical and electrical property、quality of crystallization based on varying laser power assistance. As to application, amorphous silicon is very suitable to form solar cell because of ultra high absorption coefficient compared to single-crystal silicon. However, amorphous silicon would degrade at a longer term luminance. Therefore, the LAPECVD system could supply better quality of silicon thin film to overcome this weakness. This research fabricated solar cell under laser assistance, for efficiency of solar cell without laser assistance is 6.04%, 7.01% for laser assistant solar cell, and final efficiency is up to 7.13% for tandem solar cell. In conclusion, laser assistance technology is benefit for enhance efficiency of solar cell.

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