在本研究中，嘗試用鍶及鎳元素以等價置換原理替換鋇與鈦元素形成之鈣鈦礦結構，並成功開發出可溶液式高介電常數材料作為閘極絕緣層應用於有機薄膜電晶體上，這些元件呈現不錯之電性，例如具有低臨界電壓(-1.51~-1.91 V)，低臨界電壓擺幅(350~720 mV/decade)，高載子移動率(3.00~10.04 cm2V-1s-1)及操作在低閘極電壓且具有超過103之電流開關比。透過XPS, XRD, AFM, UV/VIS, and Raman spectrum等量測，詳細分析物理參數和電性表現之相關性。此外，發現較高的原子密度具有更緻密的介電質且具有改善漏電流之特性。
總歸而言，本研究已經成功開發出可溶液式新高介電常數材料作為閘極絕緣層應用於有機薄膜電晶體上。這個研究擁有了許多優勢，
如具有較高載子移動率，低臨界電壓和低操作電壓，此結果也展現這些材料適用於有機電子上。

I Based on isovalent substitution concept, Sr and Ni are used to replace Ba and Ti elements in pervoskite structures. High permittivity materials (Strontium Titanate , Strontium Zirconate Titanate, Strontium nickelate, Strontium Zirconate nickelate) have been prepared through solution-process. The applications to the gate insulating layers of pentacene-based thin film transistors have also been demonstrated. High transistor performances, such as low threshold voltage (-1.51 to -1.91 V), low subthreshold swing (350 to720 mV per decade), high mobility (3.00 to10.04 cm2v-1s-1) and practical on/off ratios of larger than 103 operated at low gate voltage have been achieved. X-ray photoelectron spectroscopy, X-ray Diffraction, Atomic Force Microscope, Ultraviolet and Visible Spectrophotometer, and Raman spectrum have been used to investigate the high-κmaterials. The improvements in reduced gate leakage current are partially due to the denser dielectrics with higher atomic density. The
proposed high-κ materials are suitable for high mobility, low threshold voltage, and low operated voltage, which also indicated that is suitable for organic electronics.

[1] V. Subramanian, J. M. J. Frechent, P. C. Chang,and S. K. Volkman, 」Processes, and Devices」, Proceeding of the IEEE., vol. 93,p.1330, 2005.
[2] Z. T. Zhu, J. T. Mason, R. D. and G. G. Malliar, 「Humidity Sensors Based on Pentacene Thin-Film Transistors」, Appl. Phys. Lett., p.4643, 2002.
[3] A. Tsumura, H. Koezuka and T.Ando, 」Macromolecular electronic device field-effect transistor with a polythiophene thin film」, Appl .Phys .Lett., 49,p.1210, 1986.
[4] H. Koezuka, A. Tsumura, and T. Ando, 」Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility」,Synth.Met., 18, p.699, 1987.
[5] Y. Y. Lin, D. J. G., S. F. Nelson, IEEE Electron Device Lett., 18, p.87, 1997.
[6] A. Benor, A. Hoppe, V. Wagner, D. Knipp, Organic Electronics 8/6, p.749, 2007.
[7] P. R. L. Malenfant, C. D. D. a., Advanced Materials 14(2), p.99 , 2002.
[8] C. D. Dimitrakopoulos, D. J. Mascaro, 」Organic thin-film transistors: A review of recent advances」, IBM J.RES.&DEV., 45, 2001.
[9] C. D. Dimitrakopoulos, and P. R. L. Malenfant, Adv.Mater., 14, p.99, 2002.
[10] F. F. Fang, J. H. Kim, H. H. Choi, Y. Seo, 「Organic/Inorganic Hybrid of Polyaniline/BaTiO3 Composites and Their Electrorheological and Dielectric Characteristics」, Wiley. Inter Science,. 26, 2007.
[11] C. Y. Wei, S. H. Kuo, Y. M. Hung, W. C. Huang, F. Adriyanto, and Y.H. Wang,」 High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator ,」 IEEE., 32, p.1, 2011.
[12] Technical Laborotory, Murata Manufacturing Company, limited, Nagaoka,, Journal of The American Ceramic Society-Saburi., 44, p.54, 1961.
[13] L. Sebastian, G. Weiser, and H. Bassler, 「Charge transfer transitions in solid tetracene and pentacene studied by electroabsorption」,Chemical Physics, 61, p.125-135, 1981.
[14] S. H. Wen, A. Li, J. Song, W.-Q. Deng, K.-L. Han, and W. A. Goddard III, 「First-principles investigation of anisotropic hole mobilities in organic semiconductors,」 J. Phys. Chem. B., vol. 113, no. 26, p. 8813-8819, 2009.
[15] V. Coropceanu, M. Malagoli, D. A. da Silva Filho, N. E. Gruhn, T. G. Bill, and J. L. Bre´das, 「Hole- and electron-vibrational couplings in oligoacene crystals: intramolecular contributions,」 Phys. Rev. Lett., vol. 89, no. 27, p. 275503.1-275503.4,2002.
[16] H. L. Cheng, X. W. Liang, W. Y. Chou , Y. S. Mai, C. Y. Yang, L. R. Chang, and F. C. Tang, 「Raman spectroscopy applied to reveal polycrystalline grain structures and carrier transport properties of organic semiconductor films: Application to pentacene-based organic transistors,」 Org. Electron., vol. 10, p. 289-298, 2008.
[17] H. Yamane, S. Nagamatsu, H. Fukagawa, S. Kera, R. Friedlein, K. K. Okudaira, and N. Ueno, 「Hole-vibration coupling of the highest occupied state in pentacene thin films,」 Phys. Rev. B, vol. 72, no. 15, p. 153412-153412-4, 2005.
[18] 施敏,」半導體元件物理與製造技術」,高立出版社 ,p.223, 1997
[19] S. M. Sze, 」Semiconductor Devices-Physics and Technology」, Wiley, New York., 431,1981
[20] Wikipedia, 「Benzene」
[21] V. Coropceanu, M. Malagoli, D. A. da Silva Filho, N. E. Gruhn, T.G. Bill, and J. L. Bre´das, 「Hole- and electron-vibrational couplings in oligoacene crystals: intramolecular contributions,」 Phys. Rev. Lett., vol. 89, no. 27, p. 275503.1-275503.4, 2002.
[22] G. Hersberg, 「Molecular Spectra and Molecular Structure III. Electronic Spectra and Electronic Structure of Polyatomic Molecules, van Nostrand Reihold Company Inc., New York, 1966
[23] G. Hersberg, 「Molecular Spectra and Molecular Structure III. Electronic Spectra and Electronic Structure of Polyatomic Molecules, van Nostrand Reihold Company Inc., New York, 1966
[24] C. H. Hsiao, 「Growth of ii-vi compound semiconductors and their optoelectronic properties - dissertation for doctor of science,」 NCKU, p. 69-74, 2010.
[25] 陳意仁, 「介電材料低溫交聯性聚乙烯苯酚應用於可饒曲性有機薄膜電晶體之研究」, 碩士論文, 國立成功大學, 2007.
[26] 買昱椉, 「五環素薄膜初期成長機制研究」, 博士論文, 國立成功大學, 2007.
[27] A. S. Davydov, 」Theory of Molecular Excitons」, McGraw-Hill, New York., p. 21, 1971.
[28] L. Colangeli, V. Mennella,G. A. Baratta, E. Bussoletti and G. Strazzulla, 」Raman and infrared spectra of polycyclic aromatic hydrocarbon molecules of possible astrophysical interest」, Astrophys. J., 396. p. 369, 1992.
[29] W. Y. Chou, C. W. Kuo, H. L. Cheng, Y. S. Mai, S. T. Lin, C. C. Chang, F. C. Tang, and J. S. Hwang, 」Novel Method of Pentacene Alignment Using Photoaligned Polyimide and Its Application in Thin-film Transistors」, Chemistry of Material., 16(23), p.2610-2615, 2004.
[30] C. H. Hsiao, 「Growth of ii-vi compound semiconductors and their optoelectronic properties - dissertation for doctor of science,」 NCKU, p. 69-74, 2010
[31] T. Gao, Y. Masuda, K. Koumoto,」 Band Gap Energy of SrTiO3 Thin Film Prepared by the Liquid Phase Deposition Method」, Journal of the Korean Ceramic Society., 40. p. 213~218, 2003.
[32] L. L. Jiang, X. G. Tang, S. J. Kuang, and H. F. Xiong, 「Surface chemical states of barium zirconate titanate thin films prepared by chemical solution deposition,」 Appl. Surf. Sci., vol. 255, p. 8913, 2009.
[33] S. G. Christoskova, N. Danova, M. Georgieva, O. K. Argirov, D. Mehandzhiev, 」Investigation of a nickel oxide system for heterogeneous oxidation of organic compounds」, Applied Catalysis A., 128. p.219~229, 1995.
[34] L. E. Alexander, 」X-ray Diffraction Methods in polymer science」, Wiley, New York,429, 1969.
[35] S. Guha , J. D. Rice, Y. T. Yau, C. M. Martin, M. Chandrasekhar, H.R. Chandrasekhar, R. Guentner, P. Scandiucci de Freitas and U. Scherf, 「Temperature dependent photoluminescence of organic semiconductors with varying backbone conformation,」 Phys. Rev. B., vol. 67, p. 125204-125204-7, 2003
[36] Y. Xu, J. D. Mackenzie, 「theoretical explanation for ferroelectric-like properties of amorphous Pb(ZrxTi1-x)O3 and BaTiO3,」 Journal of Non-Crystalline Solids, 246, 136, 1999.