本文利用直流磁控濺鍍法沉積氧化錫薄膜，並討論在不同製程條件下薄膜的特性，接著將這些薄膜作為主動層應用於薄膜電晶體，並進行分析及討論其特性。
首先以直流濺鍍的方式在不同氧流量及不同退火時間溫度的製程條件下沉積薄膜，並且從幾個方向去討論氧化錫薄膜特性，分別是薄膜光學特性、薄膜結構特性及薄膜表面/縱深分析。在光學特性的部分，實驗顯示薄膜在可見光區有50%–80%的穿透率，而轉換成吸收光譜計算能隙的結果，能隙大約在2.55–2.93 eV。而在結構特性上，氧化錫薄膜使用直流濺鍍的方式長得非常緻密，而從X射線繞射分析（XRD）圖可以得知，氧流量比例5%時有明顯的P型氧化錫峰值，而氧流量比例7.5%以上薄膜則呈現非晶的結果。此外，在薄膜表面/縱深分析結果中得知，因製作時氧流量的改變可以有效地改變材料零價錫、二價錫及四價錫組成的比例，從X射線光電子能譜（XPS）圖得知，當氧流量越大時，薄膜裡的最關鍵的成分P型二價錫會大量減少。
實驗的第二部分是使用二氧化矽做為氧化錫P型薄膜電晶體的閘極介電層，我們由第一部分的薄膜分析，確認氧含量5%時會有最佳的二價錫含量比例，並且藉由爐管退火溫度及時間的改變，來找出P型薄膜電晶體最佳參數。在室溫下得到場效電洞遷移率為0.85 cm2/V∙s，臨界電壓為−0.23 V，次臨界擺幅為−1.28 V/dec，開關電流比為2.25 × 102。

In this thesis, tin oxide (SnO) was prepared by DC magnetron sputtering with a tin metallic target, and the film properties were discussed thoroughly under different processing ambiences. Next, the deposited SnO thin films were served as channel layer for thin film transistors (TFTs). Analyses were then carried out and discussion on the device characteristics was included.
In the first part of the experimental results and features discussion, we utilized the DC-sputtering system to grow films under various gas mixtures. Post-annealing treatment was subsequently conducted. Film properties were investigated in detail in terms of a number of aspects which were optical, structural, and surface/depth element analyses. The optical measurement results showed that the transmittance in the visible light region could achieve 50%–80%. The corresponding energy bandgap was about 2.55–2.93 eV. From structural analysis, it was known that thin films were densely grown by sputtering. The X-ray diffraction analysis (XRD) diagram revealed that a significant P-type tin oxide peak existed as oxygen flow ratio was 5%. While the oxygen flow ratio of the film surpassed 7.5%, crystallinity of the films transformed from crystalline to amorphous state. With material element analysis, it was observed that films may exhibit different properties by varying oxygen flow ratios when sputtering. The XPS results suggested that variation of gas mixture during sputtering can significantly change the component ratio of metallic tin (Sn0), divalent tin (Sn2+) and tetravalent tin (Sn4+) in the material. The X-ray photoelectron spectroscopy (XPS) result confirmed that as the oxygen flow ratio increased the P-type divalent tin (Sn2+) in the film would be considerably reduced.
In the second part, SnO TFTs with silica (SiO2) as the gate dielectric layer were realized. From the implemented film analyses, oxygen flow ratio of 5% was thought to hold the optimal proportion of P-type divalent tin (Sn2+) content. Manipulation of annealing time and temperature was conducted to find the optimized parameters for P-type TFT application. The SnO TFT at room temperature showed a field effect mobility of 0.85 cm2/V∙s, threshold voltage of −0.23 V, subthreshold swing of −1.28 V/dec, and on-off current ratio of 2.25 × 102.

Chapter 1
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