在積體電路的製造過程中，儘管已經使用了許多解析度增強技術來改
善微影技術的成像品質，微影熱點的問題仍然存在。因此，在電路設計的
階段，準確地偵測出電路中的微影熱點，是相當重要的。隨著積體電路製
程的進步，極紫外光刻技術的應用能更進一步改善微影技術的成像品質。
然而，相較於傳統液浸式光刻技術，應用極紫外光刻技術會產生很多複雜
的光學效應，其中的閃光效應更是一個影響成像品質的重要因素。
模式匹配是一種廣泛使用於微影熱點偵測和分類的方法，然而為了補
償極紫外光刻技術所產生的閃光效應，原本的電路中填充了許多的虛擬線
路，並且在極紫外光刻技術下，電路密度問題也變得更加重要。以上這些
因素導致現有的模式匹配方法沒有辦法完全適用於極紫外光刻技術下的
電路。因此我們提出了一個新的兩階段模式匹配演算法來處理微影熱點的
分類問題。在我們的方法中，我們不只像傳統方法一樣比對了電路元件間
形狀的相似度，我們還有考慮補償閃光效應的虛擬線路填充及電路元件的
密度問題。在實驗結果中，經過與其他現有微影熱點分類方法比較，我們
的演算法在執行時間和分類的準確性上，皆有較好的表現。

As technology node advances, Extreme Ultraviolet Lithography (EUVL)
is regarded as the most promising technology for improving the lithographic
printability. However, there are still several challenges in EUVL like the most
critical
are e ect that causes patterning distortions. As a result, dummy lls
are added to a layout (i.e., dummi cation) to compensate the
are e ect. Al-though dummy lls are used to alleviate the
are e ect, process hotspots still
cannot be fully eliminated and are essential to be detected in the early design
stages. Pattern matching is one of the most popular and widely-used tech-niques to detect the process hotspots. However, existing pattern-matching-based algorithms may not e ectively detect all process hotspots under the
consideration of dummi cation. In this thesis, we propose a two-stage triangle-based algorithm for process hotspot classi cation while considering the impact
of dummi cation in EUVL. Experimental results show that our proposed algo-rithm is very e ective and e cient compared with the state-of-the-art process
hotspot classi cation algorithm.

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