本次研究使用水平爐管，以碳熱還原法進行化學氣相沉積反應，經由氣液固路徑在無載流氣體的條件下合成氧化銦奈米線，本文中對多項生長參數進行改變，觀察生長結果，討論了不同參數對奈米線形貌的影響，最後得到以揮發溫度860 ℃，沉積溫度 540 ℃，壓力6 torr的條件下可形成線徑均勻的奈米線，且生長密度極高；平均線徑在50奈米左右，最長的奈米線可達30微米。XRD以及TEM分析證明了合成的奈米線為單晶氧化銦且晶格排列整齊。PL分析顯示奈米線內可能有一定數量的缺陷，推測可能是較低的生長溫度使得退火能量不夠。電性量測發現氧化銦奈米線的電阻率為1.18 * 10-4 Ω-cm，相較過去的文獻屬於較低的電阻率，可能是奈米線內的缺陷作為非蓄意參雜(Unintentional doping)使載子濃度上升，使電阻率下降。

In this experiment, indium oxide nanowires with high-density and good quality were synthesized via a vapor-liquid-solid chemical vapor deposition (CVD) in a three zone tube furnace. We used indium oxide powder and graphite as the precursor. The synthesized indium oxide nanowires had good morphology with an average diameter of 50 nm and length of over 10 μm. Characterization was conducted with X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence spectrum (PL). HRTEM and XRD studies show that the grown nanowires were indium oxide (c-In2O3) of BCC structure. There was a strong peak around 2.22 eV in the room temperature PL spectrum, which was believed to be originated from the defects in the crystal structure such as oxygen vacancies. The electrical resistivity of a single indium oxide nanowire was measured to be 1.18 * 10-4 Ω-cm, relatively low as compared with other previous works, which might be due to the abundant oxygen vacancies in the nanowires acting as unintentional doping.

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